MRF6S9160HSR3 vs MRF6S9045NR1 Comparaison
Comparaison détaillée côte à côte de MRF6S9160HSR3 par NXP Semiconductors et MRF6S9045NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Dernier achat
Comparaison des spécifications
| Paramètre | MRF6S9160HSR3 | MRF6S9045NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Dernier achat | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $92,40 | $16,40 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Application | RF Power Amplifier | 880 MHz Single-Carrier N-CDMA Base Station PA |
| Operating Frequency | 865 MHz to 960 MHz | 880 MHz (up to 1000 MHz) |
| Test Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | 22.7 dB |
| Drain Efficiency | 31% typical at 880 MHz | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Boîtier | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Type de montage | Flange / Chassis Mount with screw holes | Surface Mount |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Technology | — | Lateral MOSFET (RF Power) |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| Boîtier / Format | — | TO-270-2 (Case 1265-09, Style 1) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |
| Manufacturer | — | Freescale Semiconductor (acquired by NXP) |