MRF6S9160HSR3 vs MRF6S9045NR1 对比
详细并排对比 MRF6S9160HSR3 出自 NXP Semiconductors 和 MRF6S9045NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ 最后一次采购
规格对比
| 参数 | MRF6S9160HSR3 | MRF6S9045NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 最后采购期 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $92.40 | $16.40 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Application | RF Power Amplifier | 880 MHz Single-Carrier N-CDMA Base Station PA |
| Operating Frequency | 865 MHz to 960 MHz | 880 MHz (up to 1000 MHz) |
| Test Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | 22.7 dB |
| Drain Efficiency | 31% typical at 880 MHz | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| 封装 | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| 安装类型 | Flange / Chassis Mount with screw holes | Surface Mount |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Technology | — | Lateral MOSFET (RF Power) |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| 封装 / 外壳 | — | TO-270-2 (Case 1265-09, Style 1) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |
| Manufacturer | — | Freescale Semiconductor (acquired by NXP) |