MRF7S19170HSR3 vs MRF7S19100NBR1 Comparaison
Comparaison détaillée côte à côte de MRF7S19170HSR3 par NXP Semiconductors et MRF7S19100NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
MRF7S19170HSR3 ✓ Actif
Comparaison des spécifications
| Paramètre | MRF7S19170HSR3 | MRF7S19100NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $99,40 | $30,10 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status (Rochester) | Active - Rochester Electronics LLC authorized stock | — |
| Type de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | — |
| Technology | HV7 LDMOS | — |
| Frequency Band | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) | 1.93 GHz to 1.99 GHz |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Operating Drain Voltage | 28 V (typical) | — |
| Test Drain Current | 1.4 A | — |
| Output Power (Avg) | 50 W (W-CDMA) | — |
| Power Gain (typ) | 17.2 dB | — |
| Boîtier / Format | NI-880S (ceramic flange, bolt-down) | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount |
| Type de montage | Chassis / Heatsink Mount (flange) | — |
| Operating Mode | Class AB / Class C | — |
| Modulation Supported | CDMA, W-CDMA, multi-carrier GSM, EDGE | — |
| Lead Finish | Ni-Au (lead-free compatible) | — |
| Statut RoHS | Compliant (per NXP product page) | compliant (per NXP product page) |
| Part Number | — | MRF7S19100NBR1 |
| Device Type | — | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) |
| Test Frequency (typical) | — | 1.96 GHz |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | — | 65 V |
| Drain Operating Voltage (VDD) | — | 28 V (nominal) |
| Quiescent Drain Current (IDQ) | — | 1000 mA |
| Output Power (Pout, average) | — | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) |
| Power Gain (Gp, typical) | — | 17.5 dB |
| Drain Efficiency (typical) | — | [DATA_NEEDED: typical drain efficiency %] |
| Configuration | — | Single, N-Channel |
| Style de montage | — | Surface Mount with copper ground flange (heatsink bolted) |
| JEDEC Terminal Code | — | JESD-30: R-PDFM-F4 |
| Terminal Finish (JESD-609) | — | e3 (tin-lead reflow compatible per manufacturer data) |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range C] |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range C] |
| Lead-Free | — | yes |