MRF8HP21130HSR3 vs MRF8S21200HR6 Comparaison
Comparaison détaillée côte à côte de MRF8HP21130HSR3 par NXP Semiconductors et MRF8S21200HR6 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP
MRF8HP21130HSR3 ✓ ActifNXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ ActifComparaison des spécifications
| Paramètre | MRF8HP21130HSR3 | MRF8S21200HR6 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $53,10 | $62,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF8HP21130HSR3 | — |
| Device Type | Lateral N-Channel RF Power MOSFET | — |
| Application Band | 2110 - 2170 MHz (W-CDMA / LTE) | — |
| Drain Voltage (VDD) | 28 V | — |
| Output Power (Average, W-CDMA / LTE) | 28 W | — |
| Power Gain (typ.) | 14 dB | — |
| Drain Current (test condition) | 360 mA | — |
| Operating Frequency (f) | 2.17 GHz (max in band) | — |
| Architecture | In-package Doherty (two-stage) | — |
| Boîtier / Format | NI-780S-4 (air-cavity ceramic) | — |
| Style de montage | Flange mount, screw-down | — |
| Bias Class | Class AB / Class C capable | — |
| Modulation Support | W-CDMA, LTE | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Température de fonctionnement | -40C to +150C (junction) | — |
| Datasheet Document | MRF8HP21130H datasheet (NXP) | — |
| Type de transistor | — | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency | — | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.4 A |
| Power Gain | — | 18.1 dB |
| Output Power (Average) | — | 48 W |
| Drain-Source Voltage (Max) | — | 65 V |
| Configuration | — | Common Source, 2 elements |
| Case Connection | — | Source |
| Type de montage | — | Surface Mount (NI-1230 ceramic flange) |
| Boîtier | — | NI-1230 |
| Application | — | W-CDMA, LTE base station power amplifiers |
| Class of Operation | — | Class AB, Class C |
| Surface Mount | — | Yes |
| Statut RoHS | — | Compliant |