MRF8HP21130HSR3 vs MRF8S21200HR6 비교
다음의 상세 나란히 비교: MRF8HP21130HSR3 제조: NXP Semiconductors 및 MRF8S21200HR6 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ 활성사양 비교
| 파라미터 | MRF8HP21130HSR3 | MRF8S21200HR6 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $53.10 | $62.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRF8HP21130HSR3 | — |
| Device Type | Lateral N-Channel RF Power MOSFET | — |
| Application Band | 2110 - 2170 MHz (W-CDMA / LTE) | — |
| Drain Voltage (VDD) | 28 V | — |
| Output Power (Average, W-CDMA / LTE) | 28 W | — |
| Power Gain (typ.) | 14 dB | — |
| Drain Current (test condition) | 360 mA | — |
| Operating Frequency (f) | 2.17 GHz (max in band) | — |
| Architecture | In-package Doherty (two-stage) | — |
| 패키지 / 케이스 | NI-780S-4 (air-cavity ceramic) | — |
| 장착 스타일 | Flange mount, screw-down | — |
| Bias Class | Class AB / Class C capable | — |
| Modulation Support | W-CDMA, LTE | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 동작 온도 | -40C to +150C (junction) | — |
| Datasheet Document | MRF8HP21130H datasheet (NXP) | — |
| 트랜지스터 유형 | — | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency | — | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.4 A |
| Power Gain | — | 18.1 dB |
| Output Power (Average) | — | 48 W |
| Drain-Source Voltage (Max) | — | 65 V |
| Configuration | — | Common Source, 2 elements |
| Case Connection | — | Source |
| 실장 유형 | — | Surface Mount (NI-1230 ceramic flange) |
| 패키지 | — | NI-1230 |
| Application | — | W-CDMA, LTE base station power amplifiers |
| Class of Operation | — | Class AB, Class C |
| Surface Mount | — | Yes |
| RoHS 상태 | — | Compliant |