MRF8P23080HSR5 vs MRF8P26080HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8P23080HSR5 par NXP Semiconductors et MRF8P26080HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF8P23080HSR5 | MRF8P26080HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $55,80 | $99,85 |
| Manufacturer | NXP Semiconductors | — |
| Product Type | RF Power MOSFET (Lateral N-Channel) | — |
| Series | Airfast HV8 | — |
| Frequency Band | 2300 to 2400 MHz | — |
| Test Frequency | 2.3 GHz | — |
| Target Waveforms | W-CDMA, LTE | — |
| Average Output Power | 16 W | — |
| Peak Output Power | 80 W | — |
| Power Gain (typical) | 14.6 dB at 2.3 GHz | — |
| Drain-Source Voltage (Vds) Test Condition | 28 V | — |
| Drain Current (Id) Test Condition | 280 mA | — |
| Boîtier / Format | NI-780S-4L | — |
| Type de montage | Chassis / Flange Mount | Through-hole flange-mount with screw attachment |
| Operating Mode | Class AB | — |
| Technology | Laterally Diffused MOS (LDMOS) | Gen8 LDMOS (Silicon, Lateral) |
| Channel Polarity | N-Channel | — |
| Compliance | RoHS compliant per NXP product page | — |
| Type de transistor | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 2500 MHz to 2700 MHz |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Boîtier | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Plage de température de fonctionnement | — | -40C to +150C (junction) |