MRF8P23080HSR5 vs MRF8P26080HSR3 비교
다음의 상세 나란히 비교: MRF8P23080HSR5 제조: NXP Semiconductors 및 MRF8P26080HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ 활성사양 비교
| 파라미터 | MRF8P23080HSR5 | MRF8P26080HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $55.80 | $99.85 |
| Manufacturer | NXP Semiconductors | — |
| Product Type | RF Power MOSFET (Lateral N-Channel) | — |
| Series | Airfast HV8 | — |
| Frequency Band | 2300 to 2400 MHz | — |
| Test Frequency | 2.3 GHz | — |
| Target Waveforms | W-CDMA, LTE | — |
| Average Output Power | 16 W | — |
| Peak Output Power | 80 W | — |
| Power Gain (typical) | 14.6 dB at 2.3 GHz | — |
| Drain-Source Voltage (Vds) Test Condition | 28 V | — |
| Drain Current (Id) Test Condition | 280 mA | — |
| 패키지 / 케이스 | NI-780S-4L | — |
| 실장 유형 | Chassis / Flange Mount | Through-hole flange-mount with screw attachment |
| Operating Mode | Class AB | — |
| Technology | Laterally Diffused MOS (LDMOS) | Gen8 LDMOS (Silicon, Lateral) |
| Channel Polarity | N-Channel | — |
| Compliance | RoHS compliant per NXP product page | — |
| 트랜지스터 유형 | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | — | 2500 MHz to 2700 MHz |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| 패키지 | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| 동작 온도 범위 | — | -40C to +150C (junction) |