MRF8S21100HSR3 vs MRF8P26080HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8S21100HSR3 par NXP Semiconductors et MRF8P26080HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActifNXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF8S21100HSR3 | MRF8P26080HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $65,00 | $99,85 |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) | Gen8 LDMOS (Silicon, Lateral) |
| Drain-Source Voltage (V(BR)DSS) | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V nominal | 28 V nominal |
| Frequency Range | 2110 MHz to 2170 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.14 GHz | — |
| Output Power (CW, typical) | 100 W | — |
| Average Output Power (W-CDMA) | 24 W | — |
| Power Gain (typ) | 18.3 dB at 2.14 GHz | — |
| Drain Current (ID, max) | [DATA_NEEDED: max ID rating] | — |
| Boîtier / Format | NI-780S (Case 465A-06), 3-pin ceramic flange | — |
| Configuration | Single, push-pull N/A | — |
| Type de montage | Chassis / flange mount, screw-down | Through-hole flange-mount with screw attachment |
| Operating Class | Class AB or Class C | — |
| Application | W-CDMA, LTE base-station power amplifiers | — |
| Statut RoHS | Compliant (per NXP product family) | — |
| Lead-Free | Yes | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Boîtier | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |
| Plage de température de fonctionnement | — | -40C to +150C (junction) |