MRFE6S9160HSR3 vs MRFE6S9160HR3 Comparaison
Comparaison détaillée côte à côte de MRFE6S9160HSR3 par NXP Semiconductors et MRFE6S9160HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRFE6S9160HSR3 | MRFE6S9160HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $55,20 | $25,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRFE6S9160HSR3 | — |
| Type de transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Tension de claquage drain-source | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz | 880 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | 32.4% (typical, N-CDMA, 880 MHz) |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Boîtier | NI-780S (NI780HS) ceramic, bolted flange | — |
| Type de montage | Through-hole / chassis mount with flange | Chassis / Flange mount (through-hole RF leads) |
| Statut RoHS | [DATA_NEEDED: confirm via latest distributor listing] | Compliant |
| Technology | HV6E (6th gen high-voltage LDMOS) | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Boîtier / Format | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Plage de température de fonctionnement | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| Niveau MSL | — | Not applicable (non-SMD air-cavity package) |