MRFE6S9160HSR3 vs MRFE6S9160HR3 对比
详细并排对比 MRFE6S9160HSR3 出自 NXP Semiconductors 和 MRFE6S9160HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRFE6S9160HSR3 | MRFE6S9160HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $55.20 | $25.20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRFE6S9160HSR3 | — |
| 晶体管类型 | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| 漏源击穿电压 | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz | 880 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | 32.4% (typical, N-CDMA, 880 MHz) |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| 封装 | NI-780S (NI780HS) ceramic, bolted flange | — |
| 安装类型 | Through-hole / chassis mount with flange | Chassis / Flange mount (through-hole RF leads) |
| RoHS 状态 | [DATA_NEEDED: confirm via latest distributor listing] | Compliant |
| Technology | HV6E (6th gen high-voltage LDMOS) | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| 封装 / 外壳 | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| 工作温度范围 | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Lead-Free | — | Yes |
| MSL 等级 | — | Not applicable (non-SMD air-cavity package) |