MT29F1G08ABAEAWP-IT:E vs MX30LF1GE8AB-TI-TR Comparaison
Comparaison détaillée côte à côte de MT29F1G08ABAEAWP-IT:E par Micron Technology et MX30LF1GE8AB-TI-TR par Macronix. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Micron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ ActifMacronix
MX30LF1GE8AB-TI-TR - 1Gbit 3V SLC NAND Flash, x8, TSOP-48 | Macronix
MX30LF1GE8AB-TI-TR ✓ ActifComparaison des spécifications
| Paramètre | MT29F1G08ABAEAWP-IT:E | MX30LF1GE8AB-TI-TR |
|---|---|---|
| Marque | Micron Technology | Macronix |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,60 | $1,89 |
| Taille de mémoire | 1 Gbit (128 MB) | — |
| Organisation de la mémoire | 128M x 8 | — |
| Interface | Parallel | — |
| Tension d'alimentation | 3.3 V | — |
| Access Time | 25 ns | — |
| Page Size | 2048 bytes + 64 bytes spare | 2112 bytes (2048 data + 64 spare) |
| Block Size | 128 KB | 64 pages (128 KB + 4 KB spare) |
| Program Time | 200 us (typical) | — |
| Erase Time | 2 ms (typical) | — |
| Endurance | 100K program/erase cycles | — |
| Data Retention | 10 years | 10 years (typical) |
| Température de fonctionnement | -40C to +85C | -40 C to +85 C (industrial) |
| Boîtier | TSOP-48 | 48-pin TSOP-I (Type I) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Type de mémoire | — | Non-Volatile NAND Flash (SLC) |
| Memory Organization | — | 128 M x 8 |
| Density | — | 1 Gbit (1024 Mbit) |
| Type d'interface | — | Parallel Asynchronous (ONFI 1.0) |
| Cell Technology | — | Single-Level Cell (SLC) |
| Number of Blocks | — | 1024 |
| Access Time (tR) | — | 20 ns / 25 ns (grade dependent) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Active Read Current (ICC1) | — | 15 mA typical |
| Program / Erase Current (ICC2) | — | 15 mA typical |
| Program / Erase Endurance | — | 100 K cycles per block (typical) |
| ECC Architecture | — | ECC-Free (external host ECC required) |
| Compliance Standard | — | ONFI 1.0 |
| Bad Block Mark | — | 00h on 1st and 2nd page (per datasheet v1.3) |
| Bad Block Indicator | — | Marked at 1st and 2nd page (00h) per datasheet v1.3 |
| R/B# Power-On Delay | — | 100 us (per datasheet v1.3) |