MW4IC915NBR1 vs MW4IC915MBR1 Comparaison
Comparaison détaillée côte à côte de MW4IC915NBR1 par NXP Semiconductors et MW4IC915MBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MW4IC915NBR1 | MW4IC915MBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $23,75 | $21,50 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | NXP Semiconductors |
| Part Number | MW4IC915NBR1 | — |
| Part Family | MW4IC915NB / MW4IC915GNB | — |
| Device Type | RF Power Amplifier (LDMOS, multi-stage, integrated) | — |
| Technology | High Voltage LDMOS IC | RF LDMOS (Laterally Diffused MOSFET) |
| Frequency Range (Target Band) | 860 MHz to 960 MHz | — |
| Usable Frequency Range | 750 MHz to 1000 MHz | — |
| Supply Voltage (Typical) | 26 V | — |
| Supply Voltage (Operating Range) | 26 V to 28 V | — |
| Output Power (Pulsed / CW) | 15 W | — |
| Target Modulations | GSM, GSM EDGE, TDMA, N-CDMA, W-CDMA | — |
| Boîtier | TO-272 WB-16 (over-molded plastic) | TO-272 WB-16 (Case 1329-09), overmolded plastic |
| Type de montage | Surface Mount | Surface Mount / Flange (TO-272 style) |
| Construction | Multi-stage, on-chip input matching | — |
| Operating Temperature (Min) | -10 °C | — |
| Operating Temperature (Max) | +85 °C | — |
| Statut RoHS | [DATA_NEEDED: RoHS status - N-suffix implies lead-free transition per datasheet PDF title] | Compliant |
| Replaces | MW4IC915MBR1 (N suffix indicates lead-free transition, no form/fit/function change) | — |
| Product Family | — | MW4IC915 |
| Fonction | — | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | — | 750 MHz to 1 GHz (operating band 860-960 MHz per datasheet) |
| Output Power (CW) | — | 15 W typical at 26 V |
| Tension d'alimentation | — | 26 V typical |
| Configuration | — | Two-stage integrated amplifier with on-chip matching |
| Target Applications | — | GSM, GSM EDGE, N-CDMA, W-CDMA base stations |
| Input Matching | — | On-chip, integrated |
| Output Matching | — | On-chip, integrated |
| Lead Free | — | Yes |