MW4IC915NBR1 - 15W RF LDMOS PA 860-960MHz | NXP TO-272WB-16
Référence : MW4IC915NBR1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $29.8 | $2 980,00 |
| 500 | $26.5 | $13 250,00 |
| 1 000 | $23.75 | $23 750,00 |
MW4IC915NBR1 Présentation
An RF power amplifier is the final active stage in a base-station transmitter that boosts a low-level modulated RF signal up to the multi-watt levels required to drive the antenna feed network. Within the transmitter chain, this block sits after the up-converter and channel-filter stages, and it must provide adequate gain, efficiency, and linearity so the modulated signal is reproduced at the antenna without distortion or spectral regrowth. LDMOS (Laterally Diffused Metal Oxide Semiconductor) has become the dominant technology for cellular base-station PAs in the sub-3 GHz bands because it combines high power density, high breakdown voltage, and good thermal performance with relatively low cost compared to GaAs.
Key specifications include a frequency range of 860-960 MHz (broadband usable from 750-1000 MHz), a 26 V typical supply (with operation up to 28 V), 15 W pulsed output power capability, multi-stage on-chip input matching, and integrated ESD protection. The two variants in the family - MW4IC915NBR1 with the internal input match optimised for the 860-960 MHz band and MW4IC915GNBR1 covering 728-803 MHz - share the same package and pinout, allowing PCB reuse across regional cellular bands. According to the manufacturer data sheet, the device is designed for use as the final stage in a base-station power amplifier module.
The MW4IC915NBR1 uses a multi-stage LDMOS transistor architecture in which the input, inter-stage, and output matching networks are absorbed onto the silicon die. This integration simplifies board-level design by eliminating dozens of external discrete components that a discrete-transistor PA would otherwise require, while the high-voltage (26-28 V) operation reduces DC current and improves power-added efficiency relative to lower-voltage parts at the same RF power level. The device is rated to operate case temperatures within published limits and is qualified for the demanding reliability expectations of outdoor cellular infrastructure.
Typical applications include GSM 900 MHz and GSM EDGE base-station transmit chains, cellular repeaters and boosters, TDMA/N-CDMA/W-CDMA driver or final amplifiers in the 900 MHz band, and industrial/scientific/medical (ISM) transmitters near 915 MHz. Designers typically pair it with circulators, isolators, and bandpass filters downstream to meet regulatory emission masks.
When designing with this amplifier, thermal management is critical - the on-chip LDMOS transistors dissipate substantial heat at multi-watt CW or average output, so adequate PCB copper area or an external heatsink must be provided. Designers should also follow the manufacturer's reference PCB layout and bias sequencing to avoid device stress during turn-on and turn-off transients.
This page synthesises real distributor pricing, drop-in alternatives from the same NXP MW4IC915 family, and practical design notes for cellular base-station PA applications not all collected in one place in the manufacturer's data sheet.
Alternatives de remplacement direct pour MW4IC915NBR1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MW4IC915NBR1 (même facteur de forme et même empreinte) — différant par Manufacturer, Mounting Type, Package, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MW4IC915MBR1
✅ Remplacement direct✓ En stock
$21.5 / unité
Voir la fiche technique →MW4IC915GNBR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MW7IC930NR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MW7IC930NBR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MW7IC930GNR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MW4IC915NBR1 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) |
| Part Number | MW4IC915NBR1 |
| Part Family | MW4IC915NB / MW4IC915GNB |
| Device Type | RF Power Amplifier (LDMOS, multi-stage, integrated) |
| Technology | High Voltage LDMOS IC |
| Frequency Range (Target Band) | 860 MHz to 960 MHz |
| Usable Frequency Range | 750 MHz to 1000 MHz |
| Supply Voltage (Typical) | 26 V |
| Supply Voltage (Operating Range) | 26 V to 28 V |
| Output Power (Pulsed / CW) | 15 W |
| Target Modulations | GSM, GSM EDGE, TDMA, N-CDMA, W-CDMA |
| Boîtier | TO-272 WB-16 (over-molded plastic) |
| Type de montage | Surface Mount |
| Construction | Multi-stage, on-chip input matching |
| Operating Temperature (Min) | -10 °C |
| Operating Temperature (Max) | +85 °C |
| Replaces | MW4IC915MBR1 (N suffix indicates lead-free transition, no form/fit/function change) |
Configuration des broches de MW4IC915NBR1
| Broche 1 | RFIN — RF input to first LDMOS stage (on-chip matched) |
| Broche 2 | GND — Ground (package flange / die paddle internally grounded) |
| Broche 3 | VD1 — Drain bias, stage 1 |
| Broche 4 | GND — Ground |
| Broche 5 | GND — Ground |
| Broche 6 | VD2 — Drain bias, stage 2 |
| Broche 7 | GND — Ground |
| Broche 8 | GND — Ground |
| Broche 9 | VD3 — Drain bias, stage 3 |
| Broche 10 | GND — Ground |
| Broche 11 | GND — Ground |
| Broche 12 | VD4 — Drain bias, final/output stage |
| Broche 13 | GND — Ground |
| Broche 14 | RFOUT — RF output from final LDMOS stage |
| Broche 15 | GND — Ground |
| Broche 16 | VGG — Gate bias supply for multi-stage amplifiers |
Zone de fonctionnement sûr (DC)
Applications typiques
MW4IC915NBR1 convient pour 6 applications: GSM 900 Base Station Transmitter, GSM EDGE Linear Power Amplifier, Cellular Signal Booster / Repeater, ISM Band 915 MHz Transmitter, W-CDMA / 3G UMTS Driver PA, TDMA / N-CDMA Final Stage.
GSM 900 Base Station Transmitter
The MW4IC915NBR1's targeted 860-960 MHz band, 15 W pulsed output capability, and multi-stage on-chip matching make it a direct fit for the final or driver stage of a GSM 900 base-station transmitter chain. Placed after the up-converter and channel filter with a 26 V supply rail, the amplifier delivers the 4 W average GSM power level while maintaining spectral purity for the GSM emission mask. The integrated multi-stage structure eliminates dozens of external matching components that a discrete PA design would require, reducing both BOM cost and PCB footprint. Power-added efficiency advantages of the 26 V LDMOS architecture reduce DC current draw and heat-sinking requirements versus lower-voltage PAs at the same RF output. For OEM designers, this means a smaller, cooler, and lower-cost RF module than a discrete transistor-based final stage.
Recommandé
GSM EDGE Linear Power Amplifier
The MW4IC915NBR1's linearity performance covers GSM EDGE modulation alongside GSM, TDMA, N-CDMA, and W-CDMA per the manufacturer's data sheet. EDGE's 8-PSK modulation requires higher linearity than constant-envelope GSM, so the amplifier must maintain low ACPR and EVM while delivering multi-watt average output. The 15 W CW capability provides ample linear headroom for 2-3 W EDGE average while keeping the device within its safe operating area. Designers typically bias the MW4IC915NBR1 in Class AB and apply digital predistortion upstream to meet EDGE ACLR masks. The 26 V supply preserves the high linearity and high efficiency balance that EDGE base stations demand.
Recommandé
Cellular Signal Booster / Repeater
The MW4IC915NBR1 is well matched to the high-gain driver or final PA stage of an indoor or outdoor cellular repeater operating in the 900 MHz band. Booster designers benefit from the device's integrated matching - the multi-stage on-chip network simplifies the small-form-factor PCB layouts common to wall-mounted repeaters. The 26 V supply and high power-added efficiency reduce DC draw on PoE or local mains-fed booster heads. The amplifier's broadband usability (750-1000 MHz) gives margin for repeater manufacturers to support band-spreading without board respins. Adequate heatsinking of the TO-272 package is critical in sealed repeater enclosures where convective cooling is limited.
Recommandé
ISM Band 915 MHz Transmitter
The 902-928 MHz ISM band falls inside the MW4IC915NBR1's target 860-960 MHz operating range, making the part a natural fit for industrial/scientific/medical transmitters near 915 MHz. The 15 W CW output capability addresses long-range RFID readers, wireless sensor network gateways, and remote-control base stations that need maximum radiated power within FCC Part 15 limits. The High Voltage LDMOS technology's high breakdown voltage protects the amplifier against load-mismatch transients from antennas in harsh industrial environments. Designers should add an external circulator and harmonic filter after the MW4IC915NBR1 to meet FCC spurious-emission limits. The integrated matching accelerates time-to-market for ISM product designers who prefer to reuse cellular-grade RF blocks.
Recommandé
W-CDMA / 3G UMTS Driver PA
Although the MW4IC915NBR1 was originally designed for GSM/EDGE, the manufacturer's data sheet explicitly lists W-CDMA among supported modulations, opening its use in 3G UMTS base-station driver stages in the 900 MHz band. As a driver in front of a higher-power final amplifier, the MW4IC915NBR1 contributes roughly 15 W of output while delivering the linearity needed to keep the cascaded EVM within 3GPP TS25.104 limits. The multi-stage architecture provides the gain (typically > 30 dB) required to bring small-signal modulated inputs up to driver level in one device. Designers must bias the amplifier for the W-CDMA PAPR of 5-7 dB, often rolling off output power 2-3 dB below the data-sheet typical to maintain linearity.
Recommandé
TDMA / N-CDMA Final Stage
The MW4IC915NBR1's lineage in NXP/Freescale's cellular PA portfolio includes TDMA (IS-136) and N-CDMA (IS-95) optimisation alongside GSM, and the part remains a viable final PA for legacy 2G/2.5G base stations still deployed in some markets. The 15 W CW rating covers the typical 2-5 W average operating points of these legacy air interfaces while keeping ACPR within the older J-STD-008 / EIA/TIA-136 emission masks. Repair shops maintaining legacy infrastructure value the drop-in compatibility with the original MW4IC915MBR1 part - the MW4IC915NBR1 requires no bias or matching changes when retrofitted. Long-term supportability should be confirmed with NXP for designs expected to ship beyond 2030.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MW4IC915NBR1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MW4IC915MBR1 | MW4IC915GNBR1 | MW7IC930NR1 | MW7IC930NBR1 | MW7IC930GNR1 |
|---|---|---|---|---|---|---|
| Package | TO-272 WB-16 | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same |
| Brand | NXP Semiconductors | NXP Semiconductors (formerly Freescale) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Target Frequency Band | 860-960 MHz | 860-960 MHz (identical) | 728-803 MHz | 728-960 MHz (full band) | 728-960 MHz (full band) | 728-803 MHz |
| Supply Voltage | 26 V typ (26-28 V) | 26 V typ (26-28 V) | 26 V typ (26-28 V) | 28 V typ (24-32 V) | 28 V typ (24-32 V) | 28 V typ (24-32 V) |
| Output Power | 15 W | 15 W | 15 W | Higher (MW7 family) | Higher (MW7 family) | Higher (MW7 family) |
| Technology | High Voltage LDMOS IC | High Voltage LDMOS IC | High Voltage LDMOS IC | HV LDMOS IC (next-gen) | HV LDMOS IC (next-gen) | HV LDMOS IC (next-gen) |
| Multi-Stage On-Chip Match | Yes (4-stage) | Yes (4-stage) | Yes (4-stage) | Yes | Yes | Yes |
| Lead-Free Finish | Yes (N suffix) | No (predecessor, Pb-containing) | Yes | No (R1 suffix) | Yes | No |
Principaux différenciateurs
- Targeted 860-960 MHz on-chip match eliminates external matching network (vs MW4IC915GNBR1)
- Lead-free termination compliant with current RoHS requirements (vs MW4IC915MBR1)
- Multi-stage integrated structure reduces BOM and PCB area versus discrete PA designs (vs MW7IC930NR1)
Notes de conception
Estimated: at 15 W pulsed output into a GSM/EDGE waveform with ~5 dB PAPR (so ~5 W average) and 26 V drain, power dissipation reaches roughly Pdiss = VDD * ID_total - Pout ≈ 8-10 W of heat at full pulse. The TO-272 WB-16 package relies on PCB copper area for thermal spreading - follow the manufacturer's reference PCB layout for thermal vias under the die paddle. In sealed enclosures such as repeater housings, add an external aluminium heatsink or rear-panel thermal pad to keep case temperature below +85 °C.
Use the manufacturer's reference PCB footprint (published in the MW4IC915N datasheet) to keep the lead-frame characteristic impedance close to 50 ohm at the RF input and RF output leads. Use FR-4 with Rogers RO4000-series or similar low-loss substrate for the PA section; ordinary FR-4 increases insertion loss at 900 MHz and degrades power-added efficiency. Place RF chokes and bypass capacitors within 2-3 mm of the drain bias pins to suppress low-frequency oscillation. Solder the package ground paddle directly to a continuous ground-plane copper pour with full thermal via array.
Do not operate the MW4IC915NBR1 into an open or short-circuited load for more than a brief transient - the LDMOS output stage can be damaged by output-mismatch heating. Always include an isolator or circulator between the PA output and the antenna/filter network. Avoid exceeding the 28 V absolute maximum drain supply; overvoltage stresses the LDMOS drain-source junction. Apply gate bias before or simultaneously with drain bias to prevent forward-biasing the gate diode inadvertently, and use sequenced shutdown to avoid hot-switching on the bias lines.
Keep the RF input trace on the top layer with continuous ground beneath it, and route the RF output trace clear of the bias feed network to avoid coupling. Place all decoupling (typically 100 nF / 10 nF / 1 nF / 100 pF in parallel) within 1-2 mm of each drain bias pin. Separate digital control traces, gate bias traces, and RF paths on different layers with via-stitched ground fences to keep the gate bias lines isolated from RF leakage. The reference design in the NXP data sheet should be reproduced as closely as practical; minor footprint deviations typically result in lower gain, lower efficiency, or spurious oscillation.
Informations de conformité
N suffix indicates lead-free transition per the NXP data sheet PDF title (lead-free terminations replacing predecessor MW4IC915MBR1). RoHS compliance inferred from N-suffix Pb-free finish. REACH/AEC-Q100 status not explicitly stated in retrieved data; set to unknown / not applicable. A 3rd-party CSA/UL safety certification is not applicable for an RF power amplifier IC.
