MW7IC2040NBR1 vs MW7IC2040NR1 Comparaison
Comparaison détaillée côte à côte de MW7IC2040NBR1 par NXP Semiconductors et MW7IC2040NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ ActifComparaison des spécifications
| Paramètre | MW7IC2040NBR1 | MW7IC2040NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $15,20 | $24,20 |
| RF Type | General Purpose | General Purpose / Wideband Integrated Power Amplifier |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | — |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Tension d'alimentation | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | — |
| Boîtier / Format | TO-272-16 Variant, Flat Leads | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Type de montage | Surface Mount | Surface Mount (PCB solderable with bottom drain ground plane) |
| Technology | RF LDMOS (later-generation, on-chip matching) | RF LDMOS (Laterally Diffused MOSFET) |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | — |
| Statut RoHS | Compliant (per ETEI / distributor data) | Compliant (per NXP product family) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Fonction | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Small-Signal Gain | — | 23.5 dB |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Nombre de broches | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |