MW7IC2040NBR1 vs MW7IC2040NR1 Comparação
Comparação detalhada lado a lado de MW7IC2040NBR1 por NXP Semiconductors e MW7IC2040NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ AtivoComparação de especificações
| Parâmetro | MW7IC2040NBR1 | MW7IC2040NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $15,20 | $24,20 |
| RF Type | General Purpose | General Purpose / Wideband Integrated Power Amplifier |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | — |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Tensão de alimentação | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | — |
| Encapsulamento / Caixa | TO-272-16 Variant, Flat Leads | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Tipo de montagem | Surface Mount | Surface Mount (PCB solderable with bottom drain ground plane) |
| Technology | RF LDMOS (later-generation, on-chip matching) | RF LDMOS (Laterally Diffused MOSFET) |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | — |
| Status RoHS | Compliant (per ETEI / distributor data) | Compliant (per NXP product family) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Função | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Small-Signal Gain | — | 23.5 dB |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Contagem de pinos | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |