MW7IC2220NBR1 vs MW7IC2220NR1 Comparaison
Comparaison détaillée côte à côte de MW7IC2220NBR1 par NXP Semiconductors et MW7IC2220NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ ActifNXP Semiconductors
MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
MW7IC2220NR1 ✓ ActifComparaison des spécifications
| Paramètre | MW7IC2220NBR1 | MW7IC2220NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $21,50 | $18,75 |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | LDMOS (Laterally Diffused MOSFET) |
| Fonction | W-CDMA Wideband Integrated Power Amplifier | — |
| Frequency Range | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) | 2000 MHz to 2200 MHz |
| Operating Frequency (typical) | 2167.5 MHz | — |
| Average Output Power | 2 W (33 dBm) | — |
| Drain Supply Voltage (VDD) | 28 V (24 V to 32 V operating range) | — |
| Small-Signal Gain | 31 dB (typical at 2.17 GHz) | 31 dB |
| Quiescent Current Stage 1 (IDQ1) | 80 mA | — |
| Quiescent Current Stage 2 (IDQ2) | 300 mA | — |
| Package Type | TO-272WB-16 (over-molded plastic) | — |
| Input Matching | On-chip (50 ohm nominal) | — |
| Output Matching | On-chip (50 ohm nominal) | — |
| Characteristic Impedance | 50 ohm | — |
| Maximum Operating Temperature | 150 C | — |
| Type de montage | Surface Mount (flange/over-molded) | Surface Mount (with bolted flange/heatsink tab) |
| Modulation Support | W-CDMA, TD-SCDMA, LTE, multi-carrier | — |
| Test Signal | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB | — |
| ACPR Measurement | 3.84 MHz channel bandwidth at +/-5 MHz offset | — |
| RF Type | — | W-CDMA / Wideband Integrated Power Amplifier |
| Operating Band (W-CDMA) | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2167.5 MHz |
| Output Power (Avg, W-CDMA) | — | 2 W Avg. |
| Supply Voltage (VDD) | — | 28 V typical |
| Drain Voltage Rating | — | 24 V to 32 V operational range |
| Quiescent Current (IDQ1) | — | 80 mA |
| Quiescent Current (IDQ2) | — | 300 mA |
| Input/Output Matching | — | On-chip, 50 ohm nominal |
| Stages | — | Two-stage integrated amplifier |
| Boîtier / Format | — | TO-270-16 Variant, Flat Leads (TO-270WB-16) |
| Température de fonctionnement | — | -40C to +150C (junction) |
| Packaging | — | Tape & Reel (R1 suffix) |
| Modulation Formats Supported | — | W-CDMA, TD-SCDMA, single-carrier W-CDMA |