MW7IC2220NBR1 vs MW7IC2220NR1 Comparación
Comparación detallada lado a lado de MW7IC2220NBR1 por NXP Semiconductors y MW7IC2220NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ ActivoNXP Semiconductors
MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
MW7IC2220NR1 ✓ ActivoComparación de especificaciones
| Parámetro | MW7IC2220NBR1 | MW7IC2220NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,50 | $18,75 |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | LDMOS (Laterally Diffused MOSFET) |
| Función | W-CDMA Wideband Integrated Power Amplifier | — |
| Frequency Range | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) | 2000 MHz to 2200 MHz |
| Operating Frequency (typical) | 2167.5 MHz | — |
| Average Output Power | 2 W (33 dBm) | — |
| Drain Supply Voltage (VDD) | 28 V (24 V to 32 V operating range) | — |
| Small-Signal Gain | 31 dB (typical at 2.17 GHz) | 31 dB |
| Quiescent Current Stage 1 (IDQ1) | 80 mA | — |
| Quiescent Current Stage 2 (IDQ2) | 300 mA | — |
| Package Type | TO-272WB-16 (over-molded plastic) | — |
| Input Matching | On-chip (50 ohm nominal) | — |
| Output Matching | On-chip (50 ohm nominal) | — |
| Characteristic Impedance | 50 ohm | — |
| Maximum Operating Temperature | 150 C | — |
| Tipo de montaje | Surface Mount (flange/over-molded) | Surface Mount (with bolted flange/heatsink tab) |
| Modulation Support | W-CDMA, TD-SCDMA, LTE, multi-carrier | — |
| Test Signal | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB | — |
| ACPR Measurement | 3.84 MHz channel bandwidth at +/-5 MHz offset | — |
| RF Type | — | W-CDMA / Wideband Integrated Power Amplifier |
| Operating Band (W-CDMA) | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2167.5 MHz |
| Output Power (Avg, W-CDMA) | — | 2 W Avg. |
| Supply Voltage (VDD) | — | 28 V typical |
| Drain Voltage Rating | — | 24 V to 32 V operational range |
| Quiescent Current (IDQ1) | — | 80 mA |
| Quiescent Current (IDQ2) | — | 300 mA |
| Input/Output Matching | — | On-chip, 50 ohm nominal |
| Stages | — | Two-stage integrated amplifier |
| Encapsulado / Carcasa | — | TO-270-16 Variant, Flat Leads (TO-270WB-16) |
| Temperatura de funcionamiento | — | -40C to +150C (junction) |
| Packaging | — | Tape & Reel (R1 suffix) |
| Modulation Formats Supported | — | W-CDMA, TD-SCDMA, single-carrier W-CDMA |