RTAX1000S-LG624V vs RTAX1000SL-LG624E Comparaison

Comparaison détaillée côte à côte de RTAX1000S-LG624V par Microchip Technology et RTAX1000SL-LG624E par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Microchip Technology
RTAX1000S-LG624V RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V ✓ Actif
Microchip Technology
RTAX1000SL-LG624E RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip

RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip

RTAX1000SL-LG624E ✓ Actif

Comparaison des spécifications

Paramètre RTAX1000S-LG624V RTAX1000SL-LG624E
Marque Microchip Technology Microchip Technology
Catégorie FPGA & CPLD FPGA & CPLD
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $2 600,00 $0,00
Family RTAX-S/SL Radiation-Tolerant FPGA RTAX-SL Radiation-Tolerant FPGA
Equivalent System Gates 1,000,000 1,000,000
Logic Cells 18144 —
Configurable Logic Blocks (CLBs) 12096 —
Technology Digital CMOS, antifuse-based —
Core Supply Voltage 1.5 V (nominal) 1.5 V
Configuration Type One-Time Programmable (antifuse), live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic —
Boîtier CG624 (624-pin ceramic column grid array, LG624) 624-Pin LGA (CBGA624), Ceramic
Température de fonctionnement -55C to +125C [DATA_NEEDED: operating temperature range]
Application Domain Space-flight systems, radiation-tolerant —
Maximum Family Density 4,000,000 equivalent system gates (family) —
Type de montage Surface Mount Surface Mount
Number of User I/O [DATA_NEEDED: number of user I/O for LG624 package] —
Block RAM Capacity [DATA_NEEDED: embedded SRAM bit capacity] —
Statut RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
ASIC Gates — 125,000
Logic Cells (CLBs) — 12,096
Maximum Combinatorial Delay per CLB — 0.93 ns
Maximum Frequency — 581 MHz
Process Technology — 0.15 um CMOS
Packaging — Box
Technology Base — CMOS, Antifuse
Configuration — Live-at-power-up (no external configuration device)
I/O Voltage Range — [DATA_NEEDED: I/O voltage range]
TID Rating — [DATA_NEEDED: total ionizing dose rating]
SEU Immunity — [DATA_NEEDED: single-event upset immunity figure]

Fiches techniques et ressources

Parcourir tous les produits Créer un BOM Demander un devis