RTAX2000DL-1CQ352B vs RTAX1000SL-CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX2000DL-1CQ352B par Microchip Technology et RTAX1000SL-CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000DL-1CQ352B ✓ ActifMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000DL-1CQ352B | RTAX1000SL-CQ352V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 420,00 | $0,00 |
| Equivalent System Gates | 2000000 | 1,000,000 |
| Logic Cells | 29568 | 18,144 |
| Configurable Logic Blocks (CLBs) | 19712 | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Maximum Combinatorial Delay | 0.930 ns | — |
| DSP Mathblocks (max) | 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | 540 kbits (with optional EDAC protection) | Embedded SRAM with built-in FIFO control logic |
| Technology | CMOS, antifuse (OTP, nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| Boîtier | CQFP-352 (ceramic quad flat pack) | 352-pin Ceramic CQFP (CQ352V) |
| Terminal Count | 352 | — |
| Input / Output Terminals | 166 input, 166 output | — |
| Type de montage | Surface Mount | Surface Mount |
| Radiation Tolerance Class | Radiation-tolerant (space-flight) | — |
| Configuration | Live at power-up (antifuse, single chip) | — |
| Family | — | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Statut RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |