RTAX2000DL-1CQ352B vs RTAX1000SL-CQ352V 对比
详细并排对比 RTAX2000DL-1CQ352B 出自 Microchip Technology 和 RTAX1000SL-CQ352V 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000DL-1CQ352B ✓ 量产中Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ 量产中规格对比
| 参数 | RTAX2000DL-1CQ352B | RTAX1000SL-CQ352V |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3,420.00 | $0.00 |
| Equivalent System Gates | 2000000 | 1,000,000 |
| Logic Cells | 29568 | 18,144 |
| Configurable Logic Blocks (CLBs) | 19712 | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Maximum Combinatorial Delay | 0.930 ns | — |
| DSP Mathblocks (max) | 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | 540 kbits (with optional EDAC protection) | Embedded SRAM with built-in FIFO control logic |
| Technology | CMOS, antifuse (OTP, nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| 封装 | CQFP-352 (ceramic quad flat pack) | 352-pin Ceramic CQFP (CQ352V) |
| Terminal Count | 352 | — |
| Input / Output Terminals | 166 input, 166 output | — |
| 安装类型 | Surface Mount | Surface Mount |
| Radiation Tolerance Class | Radiation-tolerant (space-flight) | — |
| Configuration | Live at power-up (antifuse, single chip) | — |
| Family | — | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| RoHS 状态 | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |