RTAX2000SL-1LG624V vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX2000SL-1LG624V par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000SL-1LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1LG624V ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000SL-1LG624V | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9 600,00 | $0,00 |
| Logic Cells | 32256 | — |
| CLBs (Configurable Logic Blocks) | 21504 | — |
| Equivalent Gates | 2000000 (approx.) | — |
| Family | RTAX-S/SL (radiation-tolerant FPGA) | — |
| Process Variant | SL (super low-power) CMOS | — |
| Core Supply Voltage | 1.5 V (nominal) | [DATA_NEEDED: core supply voltage] |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Boîtier | 624-terminal ceramic CGA (CG624) | 624-ball ceramic CGA (CGS624) |
| Type de montage | Surface Mount (column grid array) | Surface Mount |
| Programming Technology | Anti-fuse, one-time programmable | — |
| Configuration | Live at power-up, single-chip (no external config storage) | One-time programmable (OTP), live at power-up, single chip |
| Radiation Tolerance | Radiation-tolerant for space flight systems | — |
| Speed Grade | -1 | -1 |
| Application Class | Space flight / aerospace | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Embedded Memory | [DATA_NEEDED: embedded SRAM bits] | Up to 540 kbits with optional EDAC |
| Equivalent System Gates | — | 2000000 |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |