RTAX250S-1LG624B vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX250S-1LG624B par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip
RTAX250S-1LG624B ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250S-1LG624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2 020,00 | $0,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 250000 gates | 2000000 |
| Logic Cells (Modules) | 2816 cells | — |
| Registers / Logic Cells Total | 4224 logic cells | — |
| User I/O | 248 I/O | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Maximum System Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Speed Grade | -1 | -1 |
| Boîtier | 624-Pin LGA (LG624), ceramic | 624-ball ceramic CGA (CGS624) |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Configuration | Anti-fuse, live at power-up (single chip) | One-time programmable (OTP), live at power-up, single chip |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (RTAX-S class, per Microchip RTAX-S datasheet) | — |
| Type de montage | Surface Mount | Surface Mount |
| Program Numbering | B = Military program-level screening | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |