RTAX250S-1LG624B vs RTAX2000SL-1CGS624V Сравнение
Подробное сравнение бок о бок RTAX250S-1LG624B от Microchip Technology и RTAX2000SL-1CGS624V от Microsemi. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Microchip Technology
RTAX250S-1LG624B - Rad-Tolerant FPGA 250K Gates | Microchip
RTAX250S-1LG624B ✓ АктивенMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ АктивенСравнение характеристик
| Параметр | RTAX250S-1LG624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Бренд | Microchip Technology | Microsemi |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2.020,00 | $0,00 |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 250000 gates | 2000000 |
| Logic Cells (Modules) | 2816 cells | — |
| Registers / Logic Cells Total | 4224 logic cells | — |
| User I/O | 248 I/O | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Maximum System Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Speed Grade | -1 | -1 |
| Корпус | 624-Pin LGA (LG624), ceramic | 624-ball ceramic CGA (CGS624) |
| Рабочая температура | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Configuration | Anti-fuse, live at power-up (single chip) | One-time programmable (OTP), live at power-up, single chip |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (RTAX-S class, per Microchip RTAX-S datasheet) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Program Numbering | B = Military program-level screening | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | — |
| Уровень MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |