RTAX250S-1LG624V vs RTAX1000S-1LG624V Comparaison

Comparaison détaillée côte à côte de RTAX250S-1LG624V par Microchip Technology et RTAX1000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Microchip Technology
RTAX250S-1LG624V RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V ✓ Actif
Microchip Technology
RTAX1000S-1LG624V RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V ✓ Actif

Comparaison des spécifications

Paramètre RTAX250S-1LG624V RTAX1000S-1LG624V
Marque Microchip Technology Microchip Technology
Catégorie FPGA & CPLD FPGA & CPLD
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,00 $3 600,00
Family RTAX-S Radiation-Tolerant FPGA —
Equivalent Gate Count 250000 gates —
Configurable Logic Blocks (CLBs) 2816 —
Logic Cells 4224 18144
I/Os 248 —
Core Supply Voltage 1.5 V nominal —
Speed Grade -1 -1
Boîtier CGA624 (LG624), 624-column ceramic column grid array LG624 (624-ball ceramic column grid array)
Package Suffix V (leaded column finish) —
Température de fonctionnement -55C to +125C [DATA_NEEDED: operating temperature range]
Technology CMOS, antifuse programmable CMOS antifuse (one-time programmable)
Radiation Tolerance Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] —
Configuration Live at power-up, single chip, no boot PROM Nonvolatile, live at power-up, single chip
Type de montage Surface Mount Surface Mount
Niveau MSL [DATA_NEEDED: MSL level] —
Statut RoHS [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] [DATA_NEEDED: RoHS status]
Statut du cycle de vie Active —
Equivalent System Gates — 1000000
CLBs — 12096
Maximum User I/Os — 418
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Combinatorial Delay (max) — 0.93 ns
Radiation Tolerance Class — Rad-tolerant (space flight)
Architecture Family — RTAX-S (based on Axcelerator)
Screening — [DATA_NEEDED: screening flow per order code suffix]
Supply Voltage (Core) — [DATA_NEEDED: core supply voltage]

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