RTAX250S-1LG624V vs RTAX1000S-1LG624V Comparação

Comparação detalhada lado a lado de RTAX250S-1LG624V por Microchip Technology e RTAX1000S-1LG624V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX250S-1LG624V RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V - 250K-Gate Rad-Tolerant FPGA 1.5V | Microchip

RTAX250S-1LG624V ✓ Ativo
Microchip Technology
RTAX1000S-1LG624V RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V ✓ Ativo

Comparação de especificações

Parâmetro RTAX250S-1LG624V RTAX1000S-1LG624V
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $3.600,00
Family RTAX-S Radiation-Tolerant FPGA —
Equivalent Gate Count 250000 gates —
Configurable Logic Blocks (CLBs) 2816 —
Logic Cells 4224 18144
I/Os 248 —
Core Supply Voltage 1.5 V nominal —
Speed Grade -1 -1
Encapsulamento CGA624 (LG624), 624-column ceramic column grid array LG624 (624-ball ceramic column grid array)
Package Suffix V (leaded column finish) —
Temperatura de operação -55C to +125C [DATA_NEEDED: operating temperature range]
Technology CMOS, antifuse programmable CMOS antifuse (one-time programmable)
Radiation Tolerance Radiation-tolerant (RTAX-S family, SEU-tolerant) [DATA_NEEDED: TID and SEU LET figures] —
Configuration Live at power-up, single chip, no boot PROM Nonvolatile, live at power-up, single chip
Tipo de montagem Surface Mount Surface Mount
Nível MSL [DATA_NEEDED: MSL level] —
Status RoHS [DATA_NEEDED: RoHS status - ceramic space-grade package typically exempt] [DATA_NEEDED: RoHS status]
Status do ciclo de vida Active —
Equivalent System Gates — 1000000
CLBs — 12096
Maximum User I/Os — 418
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Combinatorial Delay (max) — 0.93 ns
Radiation Tolerance Class — Rad-tolerant (space flight)
Architecture Family — RTAX-S (based on Axcelerator)
Screening — [DATA_NEEDED: screening flow per order code suffix]
Supply Voltage (Core) — [DATA_NEEDED: core supply voltage]

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