RTAX250S-LG624V vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX250S-LG624V par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX250S-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250S-LG624V ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250S-LG624V | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Logic Cells | 4224 | — |
| Configurable Logic Blocks (CLBs) | 2816 | — |
| Equivalent Gate Count | 250000 gates | — |
| Maximum Toggle Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | [DATA_NEEDED: core supply voltage range] | — |
| User I/O Count | 248 | — |
| Boîtier | 624-Pin LGA (LG624) | 624-ball ceramic CGA (CGS624) |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Family | RTAX-S Radiation-Tolerant FPGA | — |
| Radiation Tolerance | Radiation-tolerant (space-grade flow, V grade) | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | — |
| Single-Event Effects Immunity | [DATA_NEEDED: SEE/TID data] | — |
| Equivalent System Gates | — | 2000000 |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Embedded Memory | — | Up to 540 kbits with optional EDAC |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Speed Grade | — | -1 |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |