RTAX250S-LG624V vs RTAX2000SL-1CGS624V 비교

다음의 상세 나란히 비교: RTAX250S-LG624V 제조: Microchip Technology 및 RTAX2000SL-1CGS624V 제조: Microsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Microchip Technology
RTAX250S-LG624V RTAX250S-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250S-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250S-LG624V ✓ 활성

사양 비교

파라미터 RTAX250S-LG624V RTAX2000SL-1CGS624V
브랜드 Microchip Technology Microsemi
카테고리 FPGA & CPLD FPGA & CPLD
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.00
Logic Cells 4224 —
Configurable Logic Blocks (CLBs) 2816 —
Equivalent Gate Count 250000 gates —
Maximum Toggle Frequency 649 MHz —
Process Technology 0.15 um CMOS —
Core Supply Voltage (Nominal) 1.5 V —
Core Supply Voltage Range [DATA_NEEDED: core supply voltage range] —
User I/O Count 248 —
패키지 624-Pin LGA (LG624) 624-ball ceramic CGA (CGS624)
동작 온도 -55C to +125C [DATA_NEEDED: operating temperature range]
Family RTAX-S Radiation-Tolerant FPGA —
Radiation Tolerance Radiation-tolerant (space-grade flow, V grade) —
실장 유형 Surface Mount Surface Mount
RoHS 상태 [DATA_NEEDED: RoHS status] —
MSL 레벨 [DATA_NEEDED: MSL level] —
Single-Event Effects Immunity [DATA_NEEDED: SEE/TID data] —
Equivalent System Gates — 2000000
Logic Cells (CLBs) — 21504
User I/Os (max, package dependent) — Up to 684
Embedded Memory — Up to 540 kbits with optional EDAC
Total Ionizing Dose (TID) — 300 krad (functional), 200 krad (parametric)
SEU Rate — Less than 1E-10 errors per bit-day
Technology — Digital CMOS, antifuse nonvolatile
Speed Grade — -1
Quality / Screening Suffix — S (space flow), V suffix qualification level
Core Supply Voltage — [DATA_NEEDED: core supply voltage]
I/O Supply Voltage — [DATA_NEEDED: I/O supply voltage]
Configuration — One-time programmable (OTP), live at power-up, single chip
Embedded SRAM Features — Built-in FIFO control logic
Clocking — Segmentable clocks, chip-wide highway routing

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