RTAX250SL-LG624V vs RTAX2000S-LG624V Comparaison
Comparaison détaillée côte à côte de RTAX250SL-LG624V par Microchip Technology et RTAX2000S-LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX250SL-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250SL-LG624V ✓ ActifMicrochip Technology
RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250SL-LG624V | RTAX2000S-LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1 620,00 | $1,00 |
| Equivalent System Gates | 250000 gates | 2,000,000 gates |
| Configurable Logic Blocks (CLBs) | 2816 | 21,504 |
| Logic Cells | 4224 | 32,256 |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V | — |
| User I/O | 248 | — |
| Boîtier | 624-pin LGA (LG624) | CG624 ceramic column grid array (LG624) |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-S/SL Radiation-Tolerant FPGAs |
| Program Technology | Anti-fuse, one-time programmable | Nonvolatile antifuse (one-time programmable) |
| Configuration | Live at power-up, single chip | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | up to 540 kbits SRAM |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Radiation Tolerance | Radiation-tolerant, SEU-mitigated (SL variant) | — |
| Type de montage | Surface Mount | — |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance] |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Memory Protection | — | optional EDAC protection |
| User I/Os | — | up to 684 |
| Power-Up Behavior | — | Live at power-up |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Parametric) | — | 200 krad |
| SEU Rate | — | < 1E-10 errors per bit-day |
| Base Commercial Family | — | Axcelerator |
| Primary Application Domain | — | Space-flight systems |
| Tension d'alimentation | — | [DATA_NEEDED: core and I/O supply voltage] |