RTAX4000DL-1CQ352E vs RTAX1000SL-CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX4000DL-1CQ352E par Microchip Technology et RTAX1000SL-CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX4000DL-1CQ352E - 4M-Gate Rad-Tolerant FPGA | Microchip
RTAX4000DL-1CQ352E ✓ ActifMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX4000DL-1CQ352E | RTAX1000SL-CQ352V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 300,00 | $0,00 |
| Equivalent System Gates | 4,000,000 gates | 1,000,000 |
| Logic Cells | [DATA_NEEDED: logic cells] | 18,144 |
| CLB Organization | 36,960 CLBs | — |
| Family | RTAX-S/SL and RTAX-DSP | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Series | RTAX4000DL | — |
| Technology | CMOS, anti-fuse, digital | — |
| Product Type | Field Programmable Gate Array (FPGA) | — |
| Boîtier | CQ352 (352-pin ceramic quad flat pack) | 352-pin Ceramic CQFP (CQ352V) |
| Speed Grade | -1 | — |
| Temperature Screening | E (flight screening level) | — |
| Radiation Tolerance | Radiation-tolerant (space-flight grade) | Radiation-tolerant, space-flight qualified family |
| Configuration | Live-at-power-up (anti-fuse, single chip) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Clocking | Segmentable clocks | — |
| Routing Features | Chip-wide highway routing, carry logic | — |
| Base Architecture | Microsemi Axcelerator | — |
| Target Applications | Space-based / space-flight systems | — |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Type de montage | — | Surface Mount |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Statut RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |