RTAX4000DL-1CQ352E vs RTAX1000SL-CQ352V Comparação
Comparação detalhada lado a lado de RTAX4000DL-1CQ352E por Microchip Technology e RTAX1000SL-CQ352V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Microchip Technology
RTAX4000DL-1CQ352E - 4M-Gate Rad-Tolerant FPGA | Microchip
RTAX4000DL-1CQ352E ✓ AtivoMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ AtivoComparação de especificações
| Parâmetro | RTAX4000DL-1CQ352E | RTAX1000SL-CQ352V |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $3.300,00 | $0,00 |
| Equivalent System Gates | 4,000,000 gates | 1,000,000 |
| Logic Cells | [DATA_NEEDED: logic cells] | 18,144 |
| CLB Organization | 36,960 CLBs | — |
| Family | RTAX-S/SL and RTAX-DSP | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Series | RTAX4000DL | — |
| Technology | CMOS, anti-fuse, digital | — |
| Product Type | Field Programmable Gate Array (FPGA) | — |
| Encapsulamento | CQ352 (352-pin ceramic quad flat pack) | 352-pin Ceramic CQFP (CQ352V) |
| Speed Grade | -1 | — |
| Temperature Screening | E (flight screening level) | — |
| Radiation Tolerance | Radiation-tolerant (space-flight grade) | Radiation-tolerant, space-flight qualified family |
| Configuration | Live-at-power-up (anti-fuse, single chip) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Clocking | Segmentable clocks | — |
| Routing Features | Chip-wide highway routing, carry logic | — |
| Base Architecture | Microsemi Axcelerator | — |
| Target Applications | Space-based / space-flight systems | — |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Tipo de montagem | — | Surface Mount |
| Temperatura de operação | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Nível MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Status RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |