RTAX4000SL-CQ352PROTO vs RTAX4000SL-CQ352EV Comparaison
Comparaison détaillée côte à côte de RTAX4000SL-CQ352PROTO par Microchip Technology et RTAX4000SL-CQ352EV par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX4000SL-CQ352PROTO - 4M-Gate Radiation-Tolerant FPGA | Microchip
RTAX4000SL-CQ352PROTO ✓ ActifMicrochip Technology
RTAX4000SL-CQ352EV - 4M Gate Rad-Tolerant FPGA | Microchip
RTAX4000SL-CQ352EV ✓ ActifComparaison des spécifications
| Paramètre | RTAX4000SL-CQ352PROTO | RTAX4000SL-CQ352EV |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | RF Modules | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $10 250,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (Radiation-Tolerant FPGA) |
| Equivalent System Gates | 4,000,000 | — |
| Logic Cells | 60,480 | — |
| CLBs | 40,320 | — |
| CLB Combinatorial Delay (Max) | 1.1 ns | — |
| Technology | CMOS, antifuse (one-time programmable) | — |
| Boîtier | CQFP-352, ceramic metal-sealed cofired | 352-pin CQFP (Ceramic Quad Flat Pack) |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | — |
| Clock Architecture | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Dedicated carry logic | — |
| Configuration | Live-at-power-up, no external configuration device | Single-chip, no external boot memory |
| Target Market | Space-flight systems | — |
| Tension d'alimentation | [DATA_NEEDED: core supply voltage] | — |
| User I/O Count (CQ352) | [DATA_NEEDED: user I/O count] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| System Gates | — | 4,000,000 |
| Logic Cells (ASIC Gates) | — | 40,320 |
| Process Technology | — | 0.15 um CMOS antifuse |
| Core Supply Voltage | — | 1.5 V |
| Screening Level | — | EV (enhanced spaceflight screening) |
| Programming Technology | — | Antifuse (one-time programmable, live at power-up) |
| Radiation Tolerance | — | Radiation-tolerant (TID/SEL/SEU per family datasheet) |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O bank voltage] |
| Maximum System Frequency | — | [DATA_NEEDED: maximum system frequency] |
| Package Material | — | Hermetic ceramic (JESD-30 S-CQFP-F352) |
| Typical Application | — | Space-flight systems, satellites, payload processing |