UCC21550 vs UCC21540 Comparaison
Comparaison détaillée côte à côte de UCC21550 par Texas Instruments et UCC21540 par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Texas Instruments
UCC21540 - 4A/6A 5.7kVRMS Isolated Gate Driver | Texas Instruments
UCC21540 ✓ ActifComparaison des spécifications
| Paramètre | UCC21550 | UCC21540 |
|---|---|---|
| Marque | Texas Instruments | Texas Instruments |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,25 | $1,85 |
| Canaux | 2 (dual-channel) | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Isolation Rating | 5000 Vrms (reinforced, UL1577) | 5.7 kVRMS (reinforced) |
| Isolation Technology | Capacitive (silicon dioxide) | Capacitive coupling |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| Supported Transistors | MOSFET, SiC, GaN, IGBT | — |
| Dead Time | Programmable via DT pin resistor | — |
| UVLO | Yes, on input and output supplies (A/B/C grade options) | — |
| Température de fonctionnement | -40C to +150C | [DATA_NEEDED: operating temperature range] |
| Boîtier | 16-SOIC (DW, 300 mil) | SOIC-16 (DW); DWK with 3.3-mm channel spacing |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | UCC21550x-Q1 family AEC-Q100 qualified | — |
| Statut RoHS | Compliant | Compliant |
| CMTI | [DATA_NEEDED: common-mode transient immunity] | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | — |
| Output Current (Peak Source) | — | 4 A |
| Output Current (Peak Sink) | — | 6 A |
| Number of Channels | — | 2 |
| Secondary-Side UVLO | — | 8 V |
| Output-Side Supply Range (VDD) | — | 6.5 V to 18 V |
| Programmable Deadtime | — | Yes (DT pin) |
| Disable Pin | — | Yes (DIS) |
| Driven Devices | — | Power MOSFET, IGBT, GaN transistor |
| Channel-to-Channel Spacing (DWK) | — | 3.3 mm |
| Isolation Type | — | Reinforced / galvanic |