UCC21550 vs UCC21540 Comparación
Comparación detallada lado a lado de UCC21550 por Texas Instruments y UCC21540 por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
UCC21540 - 4A/6A 5.7kVRMS Isolated Gate Driver | Texas Instruments
UCC21540 ✓ ActivoComparación de especificaciones
| Parámetro | UCC21550 | UCC21540 |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,25 | $1,85 |
| Canales | 2 (dual-channel) | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Isolation Rating | 5000 Vrms (reinforced, UL1577) | 5.7 kVRMS (reinforced) |
| Isolation Technology | Capacitive (silicon dioxide) | Capacitive coupling |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| Supported Transistors | MOSFET, SiC, GaN, IGBT | — |
| Dead Time | Programmable via DT pin resistor | — |
| UVLO | Yes, on input and output supplies (A/B/C grade options) | — |
| Temperatura de funcionamiento | -40C to +150C | [DATA_NEEDED: operating temperature range] |
| Encapsulado | 16-SOIC (DW, 300 mil) | SOIC-16 (DW); DWK with 3.3-mm channel spacing |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | UCC21550x-Q1 family AEC-Q100 qualified | — |
| Estado RoHS | Compliant | Compliant |
| CMTI | [DATA_NEEDED: common-mode transient immunity] | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | — |
| Output Current (Peak Source) | — | 4 A |
| Output Current (Peak Sink) | — | 6 A |
| Number of Channels | — | 2 |
| Secondary-Side UVLO | — | 8 V |
| Output-Side Supply Range (VDD) | — | 6.5 V to 18 V |
| Programmable Deadtime | — | Yes (DT pin) |
| Disable Pin | — | Yes (DIS) |
| Driven Devices | — | Power MOSFET, IGBT, GaN transistor |
| Channel-to-Channel Spacing (DWK) | — | 3.3 mm |
| Isolation Type | — | Reinforced / galvanic |