DRV8343SPHPRQ1 - Automotive 3-Phase Smart Gate Driver | TI
Référence : DRV8343SPHPRQ1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $7.5 | $7,50 |
| 10 | $6.75 | $67,50 |
| 100 | $6 | $600,00 |
| 500 | $5.4 | $2 700,00 |
| 1 000 | $4.8 | $4 800,00 |
DRV8343SPHPRQ1 Présentation
A gate driver IC is a power-management device that sits between a low-power MCU/controller and the high-current N-channel MOSFETs of an inverter. The DRV8343-Q1 family is a "smart" gate driver: it integrates gate-drive buffers, charge-pump and bootstrap supplies, current-shunt amplifiers, and protection logic. It belongs to the broader hierarchy of motor driver IC -> three-phase gate driver -> brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) inverter -> power management -> semiconductor IC.
Key features include three integrated current-shunt amplifiers with programmable gain (via SPI), 1-A peak gate-drive current, integrated charge-pump and bootstrap for 100% duty-cycle high-side drive, independent high-side/low-side control for solenoid applications, and comprehensive protection: VDS overcurrent, VGS fault, undervoltage, thermal warning, and thermal shutdown. The DRV8343SPHPRQ1 (SPI variant) gives designers real-time fault telemetry and configurable parameters versus the H/W variant.
Architecturally, the device pairs a charge pump for the high-side floating rails with a linear regulator for the low-side gate supply, plus three low-offset op-amps sized for current-sense shunts. This integration reduces BOM count versus discrete solutions, improving automotive inverter reliability and shrinking PCB area for under-hood motor control.
Typical applications include 12-V/24-V automotive three-phase BLDC and PMSM motors such as electric water pumps, oil pumps, HVAC blowers, e-compressors for electric-vehicle HVAC, electric power steering (EPS) auxiliary drives, traction auxiliaries, and traction inverters up to several kW.
When designing with the DRV8343-Q1, follow datasheet MOSFET selection guidance, place the shunt resistors near the SP/SN pins to minimize Kelvin-loop error, and add a thermal pad with adequate copper to keep junction temperature below the 150 C shutdown threshold.
This page synthesizes distributor pricing, AEC-Q100 qualified drop-in alternatives (same 48-HTQFP footprint), and practical layout guidance not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour DRV8343SPHPRQ1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec DRV8343SPHPRQ1 (même facteur de forme et même empreinte) — différant par Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
DRV8343HPHPRQ1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
DRV83053QPHPQ1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
DRV8305NPHP
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
DRV8340-Q1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
DRV8343SPHPRQ1 Valeurs maximales et caractéristiques électriques
| Product Type | Three-phase smart gate driver |
| Interface | SPI (DRV8343S variant) |
| Operating Battery Voltage | 5.5 V to 60 V |
| Number of Half-Bridges | 3 |
| Gate Drive Current (peak, sink/source) | 1 A |
| Integrated Current-Shunt Amplifiers | 3 |
| Supported MOSFET Type | N-channel (high-side + low-side) |
| Charge Pump / Bootstrap | Integrated (supports 100% duty) |
| Independent HS/LS Control | Yes (solenoid-capable via source/drain pins) |
| Plage de température de fonctionnement | -40 C to +125 C (automotive Grade 1) |
| Boîtier | 48-HTQFP (PHP) 7x7 mm with PowerPAD |
| AEC-Q100 | Qualified |
| Type de montage | Surface Mount |
| Niveau MSL | 3 |
| Statut RoHS | Compliant |
| Fault Reporting | VDS overcurrent, VGS fault, UVLO, thermal warning/shutdown via SPI |
Configuration des broches de DRV8343SPHPRQ1
| Broche 1 | VM — Power supply / battery voltage input (5.5 V to 60 V) |
| Broche 2 | VM — Power supply / battery voltage input |
| Broche 3 | GND — Ground |
| Broche 4 | GND — Ground |
| Broche 5 | GH_A — Gate drive high-side phase A |
| Broche 6 | SH_A — Source sense phase A (high-side return) |
| Broche 7 | GL_A — Gate drive low-side phase A |
| Broche 8 | SL_A — Source sense phase A (low-side return) |
| Broche 9 | DL_A — Drain sense phase A (low-side) |
| Broche 10 | SP_A — Current-sense amplifier positive input phase A |
| Broche 11 | SN_A — Current-sense amplifier negative input phase A |
| Broche 12 | SO_A — Current-sense amplifier output phase A |
| Broche 13 | GH_B — Gate drive high-side phase B |
| Broche 14 | SH_B — Source sense phase B (high-side return) |
| Broche 15 | GL_B — Gate drive low-side phase B |
| Broche 16 | SL_B — Source sense phase B (low-side return) |
| Broche 17 | DL_B — Drain sense phase B (low-side) |
| Broche 18 | SP_B — Current-sense amplifier positive input phase B |
| Broche 19 | SN_B — Current-sense amplifier negative input phase B |
| Broche 20 | SO_B — Current-sense amplifier output phase B |
| Broche 21 | GH_C — Gate drive high-side phase C |
| Broche 22 | SH_C — Source sense phase C (high-side return) |
| Broche 23 | GL_C — Gate drive low-side phase C |
| Broche 24 | SL_C — Source sense phase C (low-side return) |
| Broche 25 | DL_C — Drain sense phase C (low-side) |
| Broche 26 | SP_C — Current-sense amplifier positive input phase C |
| Broche 27 | SN_C — Current-sense amplifier negative input phase C |
| Broche 28 | SO_C — Current-sense amplifier output phase C |
| Broche 29 | GND — Ground |
| Broche 30 | GND — Ground |
| Broche 31 | VCP — Charge-pump output |
| Broche 32 | CP1 — Charge-pump flying capacitor |
| Broche 33 | CP2 — Charge-pump flying capacitor |
| Broche 34 | VDRAIN — High-side drain sense reference |
| Broche 35 | nSCS — SPI chip select (active low) |
| Broche 36 | SDI — SPI data input |
| Broche 37 | SDO — SPI data output |
| Broche 38 | SCLK — SPI clock |
| Broche 39 | nSDEN — SPI enable (active low) |
| Broche 40 | nFAULT — Fault output (active low, open-drain) |
| Broche 41 | ENABLE — Driver enable |
| Broche 42 | INL_A — PWM input low-side phase A |
| Broche 43 | INH_A — PWM input high-side phase A |
| Broche 44 | INL_B — PWM input low-side phase B |
| Broche 45 | INH_B — PWM input high-side phase B |
| Broche 46 | INL_C — PWM input low-side phase C |
| Broche 47 | INH_C — PWM input high-side phase C |
| Broche 48 | VREF — Reference voltage output |
| Broche EP | PowerPAD — Exposed thermal pad (must be soldered to GND copper pour with thermal vias) |
Applications typiques
DRV8343SPHPRQ1 convient pour 6 applications: Automotive Electric Water Pump, HVAC Blower Fan (12-V/24-V), EV HVAC Compressor (Electric Compressor), Electric Power Steering (EPS) Auxiliary Drive, Industrial 24 V Brushless Servo Drive, Battery-Powered Lawn and Garden Tools.
Automotive Electric Water Pump
The DRV8343SPHPRQ1 directly drives the three-phase BLDC/PMSM motor inside 12-V/24-V automotive coolant pumps, where the integrated three current-shunt amplifiers feed back to the MCU for closed-loop FOC. The 5.5 V to 60 V VM range tolerates cold-cranking dips and 24-V load-dump transients per ISO 7637-2. AEC-Q100 Grade 1 qualification (-40 C to +125 C) supports under-hood placement. Integrated charge pump and bootstrap enable 100% duty-cycle operation needed for high-speed pumps, and SPI diagnostics report VDS faults and thermal warning to the vehicle ECU without external comparators. Use MOSFETs such as TI CSD18540Q5B (40 V) for 12-V pumps or 60-V FETs for 24-V systems.
Recommandé
HVAC Blower Fan (12-V/24-V)
In automotive HVAC blower modules, the DRV8343SPHPRQ1 drives a small three-phase PMSM up to ~300 W. The integrated CSAs with SPI-programmable gain allow software-configurable current-scaling across low/medium/high fan speeds, eliminating external op-amp stages. The 48-HTQFP-EP (PHP) package with PowerPAD provides the thermal headroom for continuous under-hood operation. According to TI's application notes, this driver also suits AC blower inverter modules where 100% duty-cycle high-side conduction is required during peak airflow, and SPI fault registers simplify ASIL-B system-integration for ISO 26262 customers.
Recommandé
EV HVAC Compressor (Electric Compressor)
The DRV8343SPHPRQ1 drives the high-speed PMSM in 400-V/800-V EV e-compressors via the low-voltage side, controlling a discrete three-phase bridge. The 60 V VM rating plus AEC-Q100 Grade 1 qualification make it ideal for the 12-V/24-V LV auxiliary inverter driving oil/snow management compressors. The three integrated current-sense amplifiers with SPI-programmable gain provide accurate FOC feedback at high PWM rates (up to 200 kHz). The HTQFP-48 PHP PowerPAD layout supports up to ~1.5 W controller dissipation under typical 24-V battery, 20 kHz PWM operation, with thermal vias and copper pour required per datasheet section 11.
Recommandé
Electric Power Steering (EPS) Auxiliary Drive
In EPS systems, the DRV8343SPHPRQ1 can drive auxiliary three-phase BLDC motors (pumps, positioners) at 12 V/24 V. SPI-based fault reporting integrates with ASIL-B/D vehicle safety architectures. Independent source/drain pins per the datasheet enable solenoid-style control for active return-to-center valves. The 1-A peak gate-drive current drives large MOSFETs needed for high-torque motors, while the 5.5 V minimum accommodates cold-start cranking. The integrated CSAs with SPI gain programming reduce external components, lowering BOM cost for high-volume EPS production where reliability targets are stringent.
Recommandé
Industrial 24 V Brushless Servo Drive
Beyond automotive, the DRV8343SPHPRQ1 suits industrial 24-V servo drives such as small CNC spindles, conveyor motors, AGV traction wheels, and pick-and-place axes. The 60 V VM range provides margin for 24-V rectified-bus transients and brake-energy back-EMF, while the SPI diagnostics help with predictive maintenance. The HTQFP-48 EP package simplifies PCB layout versus QFN alternatives - critical for industrial customers migrating from through-hole designs. The three integrated CSAs support field-oriented control without external op-amps, reducing bill-of-material cost in volume production.
Recommandé
Battery-Powered Lawn and Garden Tools
In 36-V/48-V battery-powered outdoor tools (lawn mowers, leaf blowers, hedge trimmers), the DRV8343SPHPRQ1 (with derating) drives the high-power three-phase BLDC traction or cutter motor. Although the part is AEC-Q100 qualified, the 60 V VM rating and robust protection suite also suit harsh-environment garden-tool inverter requirements. The integrated charge pump eliminates a third-party boost IC, and SPI fault logging helps OEMs implement battery-management cut-off logic. Designers should add reverse-battery and overvoltage TVS protection per datasheet recommendations; the HTQFP-48 EP package's PowerPAD accommodates continuous high-current switching at high PWM frequency.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour DRV8343SPHPRQ1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | DRV8343HPHPRQ1 | DRV83053QPHPQ1 | DRV8305NPHP | DRV8323RSRGZR | DRV8340-Q1 |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 48-HTQFP (PHP) 7x7 mm | 48-HTQFP (PHP) 7x7 mm - same | 48-HTQFP (PHP) 7x7 mm - same | 48-HTQFP (PHP) 7x7 mm - same | VQFN-40 - different | 48-HTQFP (PHP) 7x7 mm - same |
| Operating Voltage (VM) | 5.5 V to 60 V | 5.5 V to 60 V | 4.4 V to 45 V | 4.4 V to 45 V | 6 V to 60 V | 5.5 V to 60 V |
| Interface | SPI | Hardware (H/W) | SPI | SPI | SPI | SPI |
| Integrated CSAs | 3 | 3 | 3 | 3 | 3 | 0 (no CSAs) |
| Charge Pump | Yes (integrated) | Yes | No (bootstrap only) | No (bootstrap only) | Yes | Yes |
| AEC-Q100 | Qualified (Grade 1) | Qualified (Grade 1) | Qualified (Grade 1) | Not qualified | Not qualified | Qualified (Grade 1) |
| Gate Drive Current (peak) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
Principaux différenciateurs
- Integrated three current-shunt amplifiers with SPI-programmable gain (vs DRV8340-Q1)
- SPI fault telemetry and configurable parameters (vs DRV8343HPHPRQ1)
- Integrated charge pump enabling 100% duty at 60 V (vs DRV83053QPHPQ1)
- Independent source/drain pins for solenoid control (vs DRV8305NPHP)
Notes de conception
The 48-HTQFP (PHP) PowerPAD exposed pad must be soldered to a top-layer copper pour of at least 25 mm x 25 mm with an array of thermal vias (0.3 mm drill, 1 mm pitch) to an inner ground plane. Estimated: at VM = 24 V, VDD = 12 V, fPWM = 20 kHz with 1 nC gate charge MOSFETs, the DRV8343SPHPRQ1 dissipates roughly 0.4 W in the driver IC; using the datasheet thermal-resistance model (RθJA ≈ 30 C/W on a 4-layer JEDEC board) the junction temperature rises ~12 C above ambient, well within the 150 C shutdown limit. Avoid placing the part near hot MOSFETs; gate-driver self-heating is small but combined with surrounding components it can exceed design margin.
Place shunt resistors within 5 mm of the SP_A/SP_B/SP_C and SN_A/SN_B/SN_C pins in a true Kelvin loop, routing both inputs as a differential pair directly above or below the resistor body. The current-sense traces should not share copper with gate-drive or VM switching currents, and the SO_A/SO_B/SO_C outputs should be guarded by a ground ring to prevent digital PWM noise from coupling into the MCU ADC samples. Decouple VM with at least 100 nF + 10 µF X7R close to the pin and add a bulk aluminum-polymer cap near the bridge VM node to absorb inverter reverse-current pulses.
Do not leave the SPI pins (SDI/SDO/SDEN/nSCS/SCLK) floating on the DRV8343SPHPRQ1 - tie nSCS, nSDEN, and SCLK through 100 kΩ pull-ups to VREF, and SDI through 100 kΩ pull-up as well; otherwise the device may enter indeterminate states at power-up. The integrated charge pump requires 100 nF on VCP, CP1, and CP2 with X7R dielectric; using Y5V or low-grade ceramic will cause charge-pump droop and high-side gate-voltage collapse at 100% duty. The nFAULT pin is open-drain and requires a 4.7 kΩ pull-up to VREF. Common-pitfall: do not bypass the integrated CSA outputs and feed raw phase currents to the MCU ADC - the on-chip amplifiers save an external op-amp stage and improve noise immunity.
Route the three-phase outputs GH_A/B/C and SH_A/B/C as wide copper pours on the top layer directly above the MOSFET bridge to minimize parasitic inductance; each nanohenry of loop inductance adds voltage ringing that can falsely trip VDS overcurrent protection. Place bootstrap capacitors (≥ 100 nF X7R) for each high-side phase between the corresponding SH_x and GH_x pins within 2 mm. According to TI datasheet section 11, the layout should follow a star-ground topology at the EPAD to avoid ground-bounce in the CSA reference - do not daisy-chain GND pins.
Informations de conformité
AEC-Q100 Grade 1 qualified for automotive applications per TI product page. RoHS and REACH compliant. Lead-free and halogen-free per TI materials declaration.
