DRV8343SPHPRQ1 - Automotive 3-Phase Smart Gate Driver | TI
MPN: DRV8343SPHPRQ1 ✓ نشطDRV8343SPHPRQ1 نظرة عامة
A gate driver IC is a power-management device that sits between a low-power MCU/controller and the high-current N-channel MOSFETs of an inverter. The DRV8343-Q1 family is a "smart" gate driver: it integrates gate-drive buffers, charge-pump and bootstrap supplies, current-shunt amplifiers, and protection logic. It belongs to the broader hierarchy of motor driver IC -> three-phase gate driver -> brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) inverter -> power management -> semiconductor IC.
Key features include three integrated current-shunt amplifiers with programmable gain (via SPI), 1-A peak gate-drive current, integrated charge-pump and bootstrap for 100% duty-cycle high-side drive, independent high-side/low-side control for solenoid applications, and comprehensive protection: VDS overcurrent, VGS fault, undervoltage, thermal warning, and thermal shutdown. The DRV8343SPHPRQ1 (SPI variant) gives designers real-time fault telemetry and configurable parameters versus the H/W variant.
Architecturally, the device pairs a charge pump for the high-side floating rails with a linear regulator for the low-side gate supply, plus three low-offset op-amps sized for current-sense shunts. This integration reduces BOM count versus discrete solutions, improving automotive inverter reliability and shrinking PCB area for under-hood motor control.
Typical applications include 12-V/24-V automotive three-phase BLDC and PMSM motors such as electric water pumps, oil pumps, HVAC blowers, e-compressors for electric-vehicle HVAC, electric power steering (EPS) auxiliary drives, traction auxiliaries, and traction inverters up to several kW.
When designing with the DRV8343-Q1, follow datasheet MOSFET selection guidance, place the shunt resistors near the SP/SN pins to minimize Kelvin-loop error, and add a thermal pad with adequate copper to keep junction temperature below the 150 C shutdown threshold.
This page synthesizes distributor pricing, AEC-Q100 qualified drop-in alternatives (same 48-HTQFP footprint), and practical layout guidance not found in the manufacturer datasheet alone.
بدائل مباشرة لـ DRV8343SPHPRQ1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع DRV8343SPHPRQ1 (نفس عامل الشكل والبصمة) — يختلف في Package.
DRV8343HPHPRQ1
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
DRV83053QPHPQ1
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
DRV8305NPHP
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
DRV8340-Q1
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
DRV8343SPHPRQ1 الحدود القصوى والخصائص الكهربائية
| Product Type | Three-phase smart gate driver |
| الواجهة | SPI (DRV8343S variant) |
| Operating Battery Voltage | 5.5 V to 60 V |
| Number of Half-Bridges | 3 |
| Gate Drive Current (peak, sink/source) | 1 A |
| Integrated Current-Shunt Amplifiers | 3 |
| Supported MOSFET Type | N-channel (high-side + low-side) |
| Charge Pump / Bootstrap | Integrated (supports 100% duty) |
| Independent HS/LS Control | Yes (solenoid-capable via source/drain pins) |
| نطاق درجة حرارة التشغيل | -40 C to +125 C (automotive Grade 1) |
| العلبة | 48-HTQFP (PHP) 7x7 mm with PowerPAD |
| AEC-Q100 | Qualified |
| نوع التركيب | Surface Mount |
| مستوى MSL | 3 |
| حالة RoHS | Compliant |
| Fault Reporting | VDS overcurrent, VGS fault, UVLO, thermal warning/shutdown via SPI |
تكوين أطراف DRV8343SPHPRQ1
| دبوس 1 | VM — Power supply / battery voltage input (5.5 V to 60 V) |
| دبوس 2 | VM — Power supply / battery voltage input |
| دبوس 3 | GND — Ground |
| دبوس 4 | GND — Ground |
| دبوس 5 | GH_A — Gate drive high-side phase A |
| دبوس 6 | SH_A — Source sense phase A (high-side return) |
| دبوس 7 | GL_A — Gate drive low-side phase A |
| دبوس 8 | SL_A — Source sense phase A (low-side return) |
| دبوس 9 | DL_A — Drain sense phase A (low-side) |
| دبوس 10 | SP_A — Current-sense amplifier positive input phase A |
| دبوس 11 | SN_A — Current-sense amplifier negative input phase A |
| دبوس 12 | SO_A — Current-sense amplifier output phase A |
| دبوس 13 | GH_B — Gate drive high-side phase B |
| دبوس 14 | SH_B — Source sense phase B (high-side return) |
| دبوس 15 | GL_B — Gate drive low-side phase B |
| دبوس 16 | SL_B — Source sense phase B (low-side return) |
| دبوس 17 | DL_B — Drain sense phase B (low-side) |
| دبوس 18 | SP_B — Current-sense amplifier positive input phase B |
| دبوس 19 | SN_B — Current-sense amplifier negative input phase B |
| دبوس 20 | SO_B — Current-sense amplifier output phase B |
| دبوس 21 | GH_C — Gate drive high-side phase C |
| دبوس 22 | SH_C — Source sense phase C (high-side return) |
| دبوس 23 | GL_C — Gate drive low-side phase C |
| دبوس 24 | SL_C — Source sense phase C (low-side return) |
| دبوس 25 | DL_C — Drain sense phase C (low-side) |
| دبوس 26 | SP_C — Current-sense amplifier positive input phase C |
| دبوس 27 | SN_C — Current-sense amplifier negative input phase C |
| دبوس 28 | SO_C — Current-sense amplifier output phase C |
| دبوس 29 | GND — Ground |
| دبوس 30 | GND — Ground |
| دبوس 31 | VCP — Charge-pump output |
| دبوس 32 | CP1 — Charge-pump flying capacitor |
| دبوس 33 | CP2 — Charge-pump flying capacitor |
| دبوس 34 | VDRAIN — High-side drain sense reference |
| دبوس 35 | nSCS — SPI chip select (active low) |
| دبوس 36 | SDI — SPI data input |
| دبوس 37 | SDO — SPI data output |
| دبوس 38 | SCLK — SPI clock |
| دبوس 39 | nSDEN — SPI enable (active low) |
| دبوس 40 | nFAULT — Fault output (active low, open-drain) |
| دبوس 41 | ENABLE — Driver enable |
| دبوس 42 | INL_A — PWM input low-side phase A |
| دبوس 43 | INH_A — PWM input high-side phase A |
| دبوس 44 | INL_B — PWM input low-side phase B |
| دبوس 45 | INH_B — PWM input high-side phase B |
| دبوس 46 | INL_C — PWM input low-side phase C |
| دبوس 47 | INH_C — PWM input high-side phase C |
| دبوس 48 | VREF — Reference voltage output |
| دبوس EP | PowerPAD — Exposed thermal pad (must be soldered to GND copper pour with thermal vias) |
التطبيقات النموذجية
DRV8343SPHPRQ1 مناسب لـ 6 التطبيقs: Automotive Electric Water Pump, HVAC Blower Fan (12-V/24-V), EV HVAC Compressor (Electric Compressor), Electric Power Steering (EPS) Auxiliary Drive, Industrial 24 V Brushless Servo Drive, Battery-Powered Lawn and Garden Tools.
Automotive Electric Water Pump
The DRV8343SPHPRQ1 directly drives the three-phase BLDC/PMSM motor inside 12-V/24-V automotive coolant pumps, where the integrated three current-shunt amplifiers feed back to the MCU for closed-loop FOC. The 5.5 V to 60 V VM range tolerates cold-cranking dips and 24-V load-dump transients per ISO 7637-2. AEC-Q100 Grade 1 qualification (-40 C to +125 C) supports under-hood placement. Integrated charge pump and bootstrap enable 100% duty-cycle operation needed for high-speed pumps, and SPI diagnostics report VDS faults and thermal warning to the vehicle ECU without external comparators. Use MOSFETs such as TI CSD18540Q5B (40 V) for 12-V pumps or 60-V FETs for 24-V systems.
موصى به
HVAC Blower Fan (12-V/24-V)
In automotive HVAC blower modules, the DRV8343SPHPRQ1 drives a small three-phase PMSM up to ~300 W. The integrated CSAs with SPI-programmable gain allow software-configurable current-scaling across low/medium/high fan speeds, eliminating external op-amp stages. The 48-HTQFP-EP (PHP) package with PowerPAD provides the thermal headroom for continuous under-hood operation. According to TI's application notes, this driver also suits AC blower inverter modules where 100% duty-cycle high-side conduction is required during peak airflow, and SPI fault registers simplify ASIL-B system-integration for ISO 26262 customers.
موصى به
EV HVAC Compressor (Electric Compressor)
The DRV8343SPHPRQ1 drives the high-speed PMSM in 400-V/800-V EV e-compressors via the low-voltage side, controlling a discrete three-phase bridge. The 60 V VM rating plus AEC-Q100 Grade 1 qualification make it ideal for the 12-V/24-V LV auxiliary inverter driving oil/snow management compressors. The three integrated current-sense amplifiers with SPI-programmable gain provide accurate FOC feedback at high PWM rates (up to 200 kHz). The HTQFP-48 PHP PowerPAD layout supports up to ~1.5 W controller dissipation under typical 24-V battery, 20 kHz PWM operation, with thermal vias and copper pour required per datasheet section 11.
موصى به
Electric Power Steering (EPS) Auxiliary Drive
In EPS systems, the DRV8343SPHPRQ1 can drive auxiliary three-phase BLDC motors (pumps, positioners) at 12 V/24 V. SPI-based fault reporting integrates with ASIL-B/D vehicle safety architectures. Independent source/drain pins per the datasheet enable solenoid-style control for active return-to-center valves. The 1-A peak gate-drive current drives large MOSFETs needed for high-torque motors, while the 5.5 V minimum accommodates cold-start cranking. The integrated CSAs with SPI gain programming reduce external components, lowering BOM cost for high-volume EPS production where reliability targets are stringent.
موصى به
Industrial 24 V Brushless Servo Drive
Beyond automotive, the DRV8343SPHPRQ1 suits industrial 24-V servo drives such as small CNC spindles, conveyor motors, AGV traction wheels, and pick-and-place axes. The 60 V VM range provides margin for 24-V rectified-bus transients and brake-energy back-EMF, while the SPI diagnostics help with predictive maintenance. The HTQFP-48 EP package simplifies PCB layout versus QFN alternatives - critical for industrial customers migrating from through-hole designs. The three integrated CSAs support field-oriented control without external op-amps, reducing bill-of-material cost in volume production.
موصى به
Battery-Powered Lawn and Garden Tools
In 36-V/48-V battery-powered outdoor tools (lawn mowers, leaf blowers, hedge trimmers), the DRV8343SPHPRQ1 (with derating) drives the high-power three-phase BLDC traction or cutter motor. Although the part is AEC-Q100 qualified, the 60 V VM rating and robust protection suite also suit harsh-environment garden-tool inverter requirements. The integrated charge pump eliminates a third-party boost IC, and SPI fault logging helps OEMs implement battery-management cut-off logic. Designers should add reverse-battery and overvoltage TVS protection per datasheet recommendations; the HTQFP-48 EP package's PowerPAD accommodates continuous high-current switching at high PWM frequency.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ DRV8343SPHPRQ1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | DRV8343HPHPRQ1 | DRV83053QPHPQ1 | DRV8305NPHP | DRV8323RSRGZR | DRV8340-Q1 |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 48-HTQFP (PHP) 7x7 mm | 48-HTQFP (PHP) 7x7 mm - same | 48-HTQFP (PHP) 7x7 mm - same | 48-HTQFP (PHP) 7x7 mm - same | VQFN-40 - different | 48-HTQFP (PHP) 7x7 mm - same |
| Operating Voltage (VM) | 5.5 V to 60 V | 5.5 V to 60 V | 4.4 V to 45 V | 4.4 V to 45 V | 6 V to 60 V | 5.5 V to 60 V |
| Interface | SPI | Hardware (H/W) | SPI | SPI | SPI | SPI |
| Integrated CSAs | 3 | 3 | 3 | 3 | 3 | 0 (no CSAs) |
| Charge Pump | Yes (integrated) | Yes | No (bootstrap only) | No (bootstrap only) | Yes | Yes |
| AEC-Q100 | Qualified (Grade 1) | Qualified (Grade 1) | Qualified (Grade 1) | Not qualified | Not qualified | Qualified (Grade 1) |
| Gate Drive Current (peak) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
أبرز الفروقات
- Integrated three current-shunt amplifiers with SPI-programmable gain (مقابلDRV8340-Q1)
- SPI fault telemetry and configurable parameters (مقابلDRV8343HPHPRQ1)
- Integrated charge pump enabling 100% duty at 60 V (مقابلDRV83053QPHPQ1)
- Independent source/drain pins for solenoid control (مقابلDRV8305NPHP)
ملاحظات التصميم
The 48-HTQFP (PHP) PowerPAD exposed pad must be soldered to a top-layer copper pour of at least 25 mm x 25 mm with an array of thermal vias (0.3 mm drill, 1 mm pitch) to an inner ground plane. Estimated: at VM = 24 V, VDD = 12 V, fPWM = 20 kHz with 1 nC gate charge MOSFETs, the DRV8343SPHPRQ1 dissipates roughly 0.4 W in the driver IC; using the datasheet thermal-resistance model (RθJA ≈ 30 C/W on a 4-layer JEDEC board) the junction temperature rises ~12 C above ambient, well within the 150 C shutdown limit. Avoid placing the part near hot MOSFETs; gate-driver self-heating is small but combined with surrounding components it can exceed design margin.
Place shunt resistors within 5 mm of the SP_A/SP_B/SP_C and SN_A/SN_B/SN_C pins in a true Kelvin loop, routing both inputs as a differential pair directly above or below the resistor body. The current-sense traces should not share copper with gate-drive or VM switching currents, and the SO_A/SO_B/SO_C outputs should be guarded by a ground ring to prevent digital PWM noise from coupling into the MCU ADC samples. Decouple VM with at least 100 nF + 10 µF X7R close to the pin and add a bulk aluminum-polymer cap near the bridge VM node to absorb inverter reverse-current pulses.
Do not leave the SPI pins (SDI/SDO/SDEN/nSCS/SCLK) floating on the DRV8343SPHPRQ1 - tie nSCS, nSDEN, and SCLK through 100 kΩ pull-ups to VREF, and SDI through 100 kΩ pull-up as well; otherwise the device may enter indeterminate states at power-up. The integrated charge pump requires 100 nF on VCP, CP1, and CP2 with X7R dielectric; using Y5V or low-grade ceramic will cause charge-pump droop and high-side gate-voltage collapse at 100% duty. The nFAULT pin is open-drain and requires a 4.7 kΩ pull-up to VREF. Common-pitfall: do not bypass the integrated CSA outputs and feed raw phase currents to the MCU ADC - the on-chip amplifiers save an external op-amp stage and improve noise immunity.
Route the three-phase outputs GH_A/B/C and SH_A/B/C as wide copper pours on the top layer directly above the MOSFET bridge to minimize parasitic inductance; each nanohenry of loop inductance adds voltage ringing that can falsely trip VDS overcurrent protection. Place bootstrap capacitors (≥ 100 nF X7R) for each high-side phase between the corresponding SH_x and GH_x pins within 2 mm. According to TI datasheet section 11, the layout should follow a star-ground topology at the EPAD to avoid ground-bounce in the CSA reference - do not daisy-chain GND pins.
معلومات الامتثال
AEC-Q100 Grade 1 qualified for automotive applications per TI product page. RoHS and REACH compliant. Lead-free and halogen-free per TI materials declaration.
