ESD5481MUT3G - 5V Bidirectional ESD Protection TVS | onsemi | X3-DFN-2
Référence : ESD5481MUT3G ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.38 | $0,38 |
| 10 | $0.32 | $3,20 |
| 100 | $0.24 | $24,00 |
| 500 | $0.18 | $90,00 |
| 1 000 | $0.14 | $140,00 |
ESD5481MUT3G Présentation
A TVS (Transient Voltage Suppressor) diode is a specialized semiconductor device designed to clamp fast transient overvoltages - such as those caused by ESD strikes, cable discharge events, or inductive switching - to a safe level before they damage downstream ICs. In the broader hierarchy, TVS diodes belong to circuit protection devices, which sit alongside suppressors, fuses, and varistors under the umbrella of power management and protection semiconductors. Bidirectional TVS devices like the ESD5481MUT3G protect both positive and negative transients on AC or DC-coupled signal lines, simplifying PCB layout by eliminating orientation concerns.
Key features of the ESD5481MUT3G include a 5 V reverse working voltage (VRWM), 15 V clamping voltage (VC) at the rated 2 A pulse, sub-nanosecond response time typical of TVS avalanche technology, and an extremely small PCB footprint suited to portable electronics. According to the onsemi datasheet, the device is designed to deliver best-in-class ESD clamping with low leakage and fast response.
The architecture is a silicon avalanche-breakdown Zener structure, which inherently clamps at its breakdown voltage and resets automatically once the transient subsides - no manual reset or replacement is required. This makes it ideal for dense, miniaturized designs where serviceability is limited.
Typical applications include USB 2.0/3.0 data line protection on smartphones, tablets, and wearables; HDMI/MIPI/LVDS interface protection; MP3 players, digital cameras, and other portable consumer electronics; and general-purpose I/O protection on microcontrollers and SoCs where board space is at a premium.
When designing with the ESD5481MUT3G, place the device as close as possible to the connector or vulnerable pin, keep the ground return path short and wide, and pair it with proper chassis-ground bonding to maximize ESD dissipation. Always verify clamping voltage against the absolute maximum rating of the downstream IC.
This page synthesizes distributor pricing, drop-in alternatives in the same X3-DFN package, and practical design guidance beyond what is found in the onsemi datasheet.
Alternatives de remplacement direct pour ESD5481MUT3G — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec ESD5481MUT3G (même facteur de forme et même empreinte) — différant par Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
ESD5481NUT3G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ESD5481MUT5G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ESD5481MUTBG
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
PESD5V0L1BA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ESD5V0S1B-N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ESD5481MUT3G Spécifications
| Manufacturer | onsemi |
| Product Type | Bidirectional ESD Protection TVS / Zener Diode |
| Working Voltage (VRWM) | 5 V |
| Clamping Voltage (VC) at 2 A (8/20 us) | 15 V |
| Peak Pulse Current (IPP) | 2 A (8/20 us) |
| Polarity | Bidirectional |
| Boîtier | X3-DFN-2 (0.6 x 0.3 mm) |
| Nombre de broches | 2 |
| Type de montage | Surface Mount |
| ESD Protection | Best-in-class per onsemi datasheet |
| Response Time | Sub-nanosecond (typical of TVS avalanche) |
| Application | Portable consumer electronics, cellular phones, MP3 players, digital cameras |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de ESD5481MUT3G
| Broche 1 | Terminal A — Bidirectional terminal (anode/cathode tied together) - connect to protected signal line or ground |
| Broche 2 | Terminal B — Bidirectional terminal - connect to the opposite node (signal line or ground) |
Applications typiques
ESD5481MUT3G convient pour 6 applications: USB 2.0 Data Line Protection, HDMI / MIPI / LVDS Interface Protection, Cellular Handset Antenna / RF Port Protection, Portable Media Player & Wearable ESD Protection, Digital Camera & Imaging Module Protection, Microcontroller GPIO & Button Input Protection.
USB 2.0 Data Line Protection
The ESD5481MUT3G is ideal for USB 2.0 D+/D- data line protection on smartphones, tablets, and wearables. Its 5 V VRWM safely accommodates the USB Vbus range, its bidirectional structure eliminates orientation concerns on differential pairs, and the X3-DFN-2 0.6 x 0.3 mm footprint fits within 3 mm of a micro-USB or USB-C connector. The 15 V clamping at 2 A (8/20 us) reliably diverts ESD strikes that would otherwise latch up the USB transceiver PHY. Designers benefit from a sub-nanosecond response and best-in-class clamping per onsemi - critical for surviving IEC 61000-4-2 contact-discharge tests at the enclosure.
Recommandé
HDMI / MIPI / LVDS Interface Protection
For high-speed display and camera interfaces (HDMI, MIPI DSI/CSI, LVDS) on phones, tablets, and TVs, the ESD5481MUT3G provides per-line bidirectional clamping at 5 V working voltage. Its 0.6 x 0.3 mm footprint allows one device per data line placed near the board-to-board connector, keeping stub length minimal and avoiding signal-integrity degradation above 1 GHz. The 2 A peak pulse current and 15 V clamping easily absorb human-body-model and machine-model ESD events without disrupting the high-speed differential eye. Engineers typically pair it with a common-mode choke upstream for EMI filtering.
Recommandé
Cellular Handset Antenna / RF Port Protection
Cellular handset RF antenna feeds and baseband GPIO lines benefit from the ESD5481MUT3G's 5 V VRWM and 15 V clamping. Its bidirectional operation handles positive and negative ESD transients equally, and the X3-DFN-2 package introduces negligible parasitic inductance at frequencies below 6 GHz, preserving antenna matching. Placing the device within 2 mm of the antenna feed or RF switch minimizes the radiating loop area during an ESD strike. The 2 A (8/20 us) rating exceeds typical 8 kV contact / 15 kV air-discharge IEC 61000-4-2 stress levels after resistive attenuation.
Recommandé
Portable Media Player & Wearable ESD Protection
MP3 players, smartwatches, and fitness bands are routinely exposed to user-contact ESD, and the ESD5481MUT3G's tiny X3-DFN-2 footprint (0201-class, 0.6 x 0.3 mm) is purpose-built for these space-constrained wearables. Its sub-nanosecond avalanche response suppresses transient overvoltages before they reach low-power SoCs and battery management ICs. The best-in-class clamping per onsemi ensures that sensitive audio CODECs, BLE radios, and touch controllers survive daily wear-and-tear ESD events, while the low leakage preserves battery life on standby.
Recommandé
Digital Camera & Imaging Module Protection
Digital still cameras, action cams, and drone gimbal modules route high-speed MIPI CSI-2 data from image sensors to application processors, where the ESD5481MUT3G provides per-line clamping near the flex connector. Its 5 V VRWM is well above MIPI signal levels, its 15 V clamping protects 1.8 V / 2.8 V sensor rails, and the 0.6 x 0.3 mm footprint fits between closely-spaced flex pads. Designers typically place one device on each CSI lane (clock + 1-4 data lanes) and one on the I2C control lines for complete sensor protection.
Recommandé
Microcontroller GPIO & Button Input Protection
Industrial and consumer microcontroller boards expose GPIO and reset lines to user-touch ESD, where the ESD5481MUT3G provides a compact bidirectional clamp. Its 5 V VRWM covers 3.3 V and 5 V tolerant GPIO, the 15 V clamping protects internal ESD diodes of most ARM Cortex-M and RISC-V MCUs, and the X3-DFN-2 footprint fits on crowded breakout boards. Placing one device on each user-accessible pin (reset, boot, button inputs) and on the USB / debug header significantly improves IEC 61000-4-2 system-level ESD robustness without redesigning the MCU.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour ESD5481MUT3G — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | ESD5481NUT3G | ESD5481MUT5G | ESD5481MUTBG | PESD5V0L1BA | ESD5V0S1B-N |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | Nexperia | STMicroelectronics |
| Package | X3-DFN-2 (0.6 x 0.3 mm) | X3-DFN-2 (0.6 x 0.3 mm) - same | X3-DFN-2 (0.6 x 0.3 mm) - same | X3-DFN-2 (0.6 x 0.3 mm) - same | DFN1006-2 (1.0 x 0.6 mm) - larger | X3-DFN-2 (0.6 x 0.3 mm) - same |
| Working Voltage (VRWM) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Polarity | Bidirectional | Bidirectional | Bidirectional | Bidirectional | Bidirectional | Bidirectional |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Principaux différenciateurs
- Ultra-small 0.6 x 0.3 mm X3-DFN-2 footprint (vs PESD5V0L1BA)
- Identical die across multiple onsemi packaging suffixes (vs ESD5481NUT3G)
- Best-in-class clamping per onsemi datasheet (vs Generic 0201 TVS alternatives)
Notes de conception
Place the ESD5481MUT3G as close as possible to the connector or vulnerable signal pin - typically within 3 mm - to minimize the parasitic inductance of the stub. A stub inductance of even 5 nH at a 1 A/us transient edge can add several volts of overshoot to the clamping voltage, negating the benefit of the 15 V clamp. Keep the ground return path short and wide (use a ground pour directly under the device) so the transient current returns to chassis ground without disturbing nearby analog or RF circuits.
Use a 4-layer PCB stack-up with a dedicated ground plane on layer 2 directly beneath the ESD5481MUT3G. Avoid routing any digital or RF traces between the device and its ground via - the resulting split in the return path forces the transient current to detour, increasing loop inductance and EMI. For high-speed data lines (USB, HDMI, MIPI), keep the protected line trace matched in impedance and avoid sharp 90-degree bends within 5 mm of the TVS device.
Do not assume any bidirectional TVS is automatically symmetric - verify both positive and negative transient response on the substitute datasheet before swapping. Avoid placing the ESD5481MUT3G in series with the signal (it is a 2-terminal shunt device, not a series element) and never operate it continuously above VRWM, as the leakage current will rise sharply and may exceed the downstream IC's input bias budget. Estimated: total transient energy absorption per 8/20 us pulse at 2 A is approximately 30 mJ; this is well within the X3-DFN-2 thermal mass for non-repetitive surges.
Informations de conformité
RoHS and lead-free status confirmed per onsemi product page. REACH, halogen-free, and conflict-mineral declarations not explicitly listed in the verified distributor data and marked unknown. AEC-Q100 is not applicable - the part is a consumer-grade portable TVS, not an automotive-qualified device.
