FDMF6704V - 1MHz DrMOS Module with LDO | onsemi
Référence : FDMF6704V ✗ Fin de vie| Qté | Prix unitaire | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
FDMF6704V Présentation
A DrMOS module is an integrated power-stage device that combines a half-bridge MOSFET pair with its associated driver circuitry. In the power-conversion hierarchy, it sits between discrete power MOSFETs and a complete DC-DC converter controller: the FDMF6704V accepts a PWM command and supplies high-side and low-side gate drive, while the surrounding converter determines output voltage, current, and feedback conditions.
The main benefit of integration is compact PCB area and a short gate-drive path. According to the onsemi datasheet, the 6 mm x 6 mm MLP occupies 44% less space than conventional 8 mm x 8 mm DrMOS packages. Integration also reduces the number of separately placed power-semiconductor and driver components, simplifying assembly in high-frequency synchronous buck designs.
The internal high-side and low-side MOSFETs form the efficient switching section of a synchronous buck converter. Its integrated bootstrap Schottky diode supports the high-side gate-drive circuit, while the internal LDO produces the 5 V supply required by the driver. At switching speeds up to 1 MHz, careful layout, low-inductance power loops, adequate copper, and thermal management remain essential.
Typical uses include compact CPU and GPU voltage-regulator modules, notebook and tablet power systems, telecom and networking equipment, and other high-current point-of-load converters. The module is most suitable when board area is constrained and the converter can be designed around its integrated 12 V input and 5 V gate-drive architecture.
Designers should keep the VIN power loop, phase node, and bootstrap connections compact while providing low-impedance gate-drive return paths. Thermal performance depends on the exposed package structure, PCB copper, loading, switching frequency, and ambient temperature; verify worst-case junction temperature against the manufacturer limits.
This page consolidates the verified onsemi and distributor information, distinguishes verified FDMF6704V facts from unavailable data, and records the absence of confirmed drop-in replacements rather than presenting unverified equivalents as drop-in parts.
Alternatives de remplacement direct pour FDMF6704V — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
Aucune alternative de remplacement direct disponible pour ce produit.
Demander des alternativesFDMF6704V Valeurs maximales et caractéristiques électriques
| Product Type | High-frequency DrMOS power-stage module |
| Module Functions | Driver IC, 2 power MOSFETs, bootstrap Schottky diode, and 5 V gate-drive LDO regulator |
| Power Supply Operation | Single 12 V supply |
| Switching Speed | Up to 1 MHz |
| Integrated Regulator Output | 5 V |
| Converter Topology | Synchronous buck converter |
| High-Side Device | Integrated power MOSFET |
| Low-Side Device | Integrated power MOSFET |
| Control Input | Single PWM input |
| Package Type | 40-MLP |
| Package Dimensions | 6 mm x 6 mm |
| Thermal Construction | Thermally enhanced package |
| Space Saving | 44% versus conventional 8 mm x 8 mm DrMOS packages |
Guide de configuration des broches du FDMF6704V 6 mm x 6 mm
Configuration des broches du FDMF6704V (boîtier 6 mm x 6 mm). Ce composant de puissance comporte des bornes de grille, de drain et de source. Pour les boîtiers non polarisés, consultez la fiche technique du fabricant pour l'orientation exacte de la broche 1 et les détails de l'empreinte. Les applications courantes incluent la conception d'alimentations, la commande de moteurs et la commutation de charges.
Aucune donnée de brochage détaillée disponible pour FDMF6704V.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
FDMF6704V convient pour 6 applications: CPU and GPU Point-of-Load Converters, Notebook and Tablet Power Systems, Telecom and Networking Power, High-Frequency 12 V Intermediate Rails, Compact Industrial Control Modules, Portable Computing Power Rails.
CPU and GPU Point-of-Load Converters
The FDMF6704V fits compact CPU or GPU point-of-load designs where power-stage area and switching speed are important. Its 6 mm x 6 mm 40-MLP integrates the driver, both power MOSFETs, the bootstrap Schottky diode, and a 5 V gate-drive LDO, while supporting operation up to 1 MHz. Integrating the half-bridge reduces the number of discrete power components and shortens the critical gate-drive path. The converter still requires a compatible controller, high-current magnetics, local input and output capacitors, and careful transient-response tuning. Current limits and junction-temperature limits must be verified from the full onsemi datasheet before assigning a specific processor.
Recommandé
Notebook and Tablet Power Systems
The FDMF6704V is appropriate for space-constrained notebook and tablet power conversion when a synchronous-buck stage must operate from a single 12 V rail. Its 6 mm x 6 mm DrMOS package is reported as 44% smaller than conventional 8 mm x 8 mm DrMOS packages, creating room for battery, memory, and thermal hardware. A single PWM command drives the integrated high-side and low-side MOSFETs, and the internal LDO provides the required 5 V gate-drive rail. Designers should prioritize low-inductance VIN connections, a compact phase-node path, exposed-pad thermal management, and controller loops that remain stable at switching speeds up to 1 MHz.
Recommandé
Telecom and Networking Power
The FDMF6704V can serve as a compact high-frequency switching stage in telecom or networking equipment designed around a single 12 V input bus. Integrating the driver and both MOSFETs reduces component count and PCB area, while the internal 5 V LDO and bootstrap Schottky diode simplify gate-drive implementation. Operation up to 1 MHz can help designers pursue smaller magnetics and capacitors, although real benefit depends on controller and magnetics performance. Board-level EMI control is critical because high dV/dt and di/dt switching edges can couple into adjacent signal or network circuitry; use a compact hot-loop layout, continuous return planes, and targeted filtering based on measured emissions.
Recommandé
High-Frequency 12 V Intermediate Rails
The FDMF6704V is suited to a 12 V intermediate rail that must be reduced by a high-frequency synchronous buck stage. Its integrated half-bridge uses one PWM input, while the internal 12 V-to-5 V regulator architecture provides gate-drive voltage without a separate discrete regulator. The 6 mm x 6 mm package supports compact power routing, but the design should preserve small VIN, phase-node, and bootstrap loops to limit switching losses and voltage spikes. The appropriate inductor, output capacitance, and control-loop compensation depend on the target voltage, current, transient response, and switching frequency; those values are not supplied in the verified search extract.
Recommandé
Compact Industrial Control Modules
The FDMF6704V can reduce the footprint of industrial control-module DC-DC stages that require synchronous rectification and high-frequency switching from a 12 V supply. Combining the half-bridge driver, two power MOSFETs, bootstrap diode, and 5 V LDO simplifies assembly compared with a discrete power stage. Its reported 44% package-area saving relative to conventional 8 mm x 8 mm DrMOS packages can help route dense sensing, communications, and processing functions. Engineering validation should include conducted-EMI testing, thermal chamber testing, and fault-state analysis. Because the verified extract does not provide temperature, transient-current, or SOA curves, those requirements must not be inferred from general DrMOS naming.
Recommandé
Portable Computing Power Rails
The FDMF6704V is applicable to portable-computing power rails where component count and PCB area limit converter integration. The 40-MLP 6 mm x 6 mm package places the driver, high-side and low-side MOSFETs, bootstrap diode, and 5 V gate-drive regulator in one thermally enhanced module. The single 12 V supply arrangement and PWM control interface suit a synchronous-buck topology operating up to 1 MHz. To realize the package advantage, place the module near the input capacitors and inductor, preserve a compact switching loop, and provide sufficient exposed-pad copper. Validate battery-transient behavior, light-load operation, standby current, and thermal rise using the complete manufacturer test data.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour FDMF6704V — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit |
|---|---|
| Package | 40-MLP, 6 mm x 6 mm |
| Brand | onsemi |
| Product Type | High-frequency DrMOS power-stage module |
| Integrated Elements | Driver IC, 2 power MOSFETs, bootstrap Schottky diode, 5 V gate-drive LDO |
| Supply Architecture | Single 12 V power supply |
| Gate-Drive Regulator | Integrated 5 V regulator |
| Control Interface | Single PWM input |
| Maximum Stated Switching Speed | Up to 1 MHz |
| Package Area Saving | 44% versus conventional 8 mm x 8 mm DrMOS packages |
Principaux différenciateurs
- Integrated gate-drive supply (vs FDMF6704)
- Documented high-frequency target (vs FDMF6704)
- Package-area reduction (vs Conventional 8 mm x 8 mm DrMOS package)
Notes de conception
Treat the FDMF6704V as a thermally designed power stage rather than a leaded driver. Use the manufacturer's exposed-package guidance to connect thermal copper while preserving electrical isolation of nearby nodes. Calculate conduction and switching loss at maximum output current and 1 MHz, then verify the resulting junction-temperature rise on the intended PCB rather than assuming nominal airflow is sufficient. The supplied search extract does not provide thetaJA, thetaJC, maximum junction temperature, or package-specific PCB data, so those values must come from the complete onsemi datasheet before a production thermal limit is assigned.
Keep the high-frequency power loop formed by VIN, the module's switching terminals, the low-side path, and local input capacitance as compact as possible. Place the input capacitors adjacent to the module and use broad, short copper paths to reduce parasitic inductance and di/dt-induced voltage spikes. Route sensitive feedback and gate-drive connections away from the phase node. Exact terminal numbers and dimensions are not present in the supplied extract, so use the official pinout and land pattern rather than inferring them from package size.
Design the converter around the integrated single-12 V supply architecture and the module's internal 5 V gate-drive regulator. Verify controller PWM polarity, dead time behavior, current-sense strategy, startup sequence, and bootstrap charge path against the FDMF6704V datasheet. Do not assume the part can be operated from another supply merely because the package and function resemble another DrMOS family. Validate the startup and steady-state rails on hardware before adding load.
Informations de conformité
No verified compliance declarations for FDMF6704V were included in the supplied manufacturer or distributor snippets. Values are therefore unknown rather than inferred from the package, manufacturer, or product category.
