IGW25N120H3FKSA1 - 1200V 25A TRENCHSTOP IGBT3 | Infineon
Référence : IGW25N120H3FKSA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.62 | $5,62 |
| 10 | $5.05 | $50,50 |
| 100 | $4.49 | $449,00 |
| 500 | $3.96 | $1 980,00 |
| 1 000 | $3.42 | $3 420,00 |
IGW25N120H3FKSA1 Présentation
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor switch that combines the high-current drive capability of a bipolar transistor with the voltage-driven simplicity of a MOSFET. Within the broader power semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages) and thyristors (used at very high power). It belongs to the family of discrete power transistors, which themselves are a category of discrete semiconductors that includes MOSFETs, BJTs, and diodes. TRENCHSTOP IGBT3 is Infineon's third-generation IGBT technology, optimized for hard-switching topologies up to 1200 V.
Key features of the IGW25N120H3FKSA1 include 1200 V VCE breakdown, 25 A nominal collector current (50 A pulsed), 326 W maximum power dissipation, and a typical VCE(sat) of 2.05 V. The Trench Field Stop structure provides low saturation voltage combined with fast switching, which is the key engineering trade-off in IGBT design. This device is also co-packed as a single IGBT (no anti-parallel diode), recommended for use in combination with an external SiC diode such as the IDH15S120 for high-frequency rectification.
Typical applications include industrial inverters, uninterruptible power supplies (UPS), solar inverters, welding equipment, and induction heating. The high-speed switching characteristics make it especially suitable for resonant and hard-switching converters operating at 8-40 kHz where switching loss dominates. The TO-247 package provides robust mechanical strength and good thermal performance for through-hole mounting in power modules.
When designing with the IGW25N120H3FKSA1, ensure adequate heatsinking for the 326 W power dissipation and respect the safe operating area (SOA) at high currents. Gate drive should be a 15 V turn-on with strong gate resistor selection to balance EMI and switching loss. This part is lead-free, RoHS compliant, and qualified for industrial-grade temperature ranges. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond what is in the manufacturer datasheet.
Alternatives de remplacement direct pour IGW25N120H3FKSA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IKW25N120H3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IKW25N120H3FKSA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IGW60T120FKSA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STGW25H120DF2
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
FGH25N120FTD
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IGW25N120H3FKSA1 Valeurs maximales et caractéristiques électriques
| IGBT Type | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | 1200 V |
| Nominal Collector Current (IC) at TC=25C | 50 A |
| Nominal Collector Current (IC) at TC=100C | 25 A |
| Maximum Power Dissipation (Ptot) | 326 W |
| Gate-Emitter Voltage (VGE) | +/- 20 V |
| Tension de saturation collecteur-émetteur (Vce(sat)) | 2.05 V (typical, at IC=25A, VGE=15V) |
| Technology | TRENCHSTOP IGBT3 (Generation 3) |
| Built-in Diode | No (co-pack-free IGBT, external SiC diode IDH15S120 recommended) |
| Boîtier | TO-247-3-1 (PG-TO247-3-1), through-hole |
| Type de montage | Through Hole |
| Plage de température de fonctionnement | -40C to +175C (junction, max Tj) |
| Storage Temperature Range | -55C to +150C |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de IGW25N120H3FKSA1
| Broche 1 | Gate (G) — Gate control input, voltage-driven |
| Broche 2 | Collector (C) — Main current terminal (drain of equivalent MOSFET) |
| Broche 3 | Emitter (E) — Main current return terminal (source of equivalent MOSFET) |
| Broche 4 | Tab (Collector) — Metal back tab electrically connected to Collector; also serves as heatsink mounting surface |
Forward Bias Zone de fonctionnement sûr (FBSOA) of IGW25N120H3
Applications typiques
IGW25N120H3FKSA1 convient pour 6 applications: Industrial Motor Drives, Solar Inverters, Uninterruptible Power Supplies (UPS), Induction Heating, Welding Equipment, Switch-Mode Power Supplies (SMPS) for Industrial.
Industrial Motor Drives
The IGW25N120H3FKSA1 is well suited to industrial motor drive inverters operating at 400V or 690V AC line input, where the 1200V VCE rating provides ample margin for DC bus voltages up to 800V. With 25A nominal collector current at TC=100C, the device can deliver 5-10 kW per switch in three-phase inverter configurations. The TRENCHSTOP IGBT3 technology's low VCE(sat) of 2.05V reduces conduction loss, while its fast turn-off behavior supports PWM frequencies up to 20 kHz. Pairing with the SiC diode IDH15S120 further improves efficiency. This part is widely used in servo drives, general-purpose variable frequency drives (VFDs), and industrial pump/fan controllers.
Recommandé
Solar Inverters
In string inverters and central solar inverters, the IGW25N120H3FKSA1 is used in the boost stage and the DC-AC inverter stage. The 1200V VCE rating handles 1000V and 1500V DC string voltages safely with margin. The IGBT's 25A nominal current supports 10-15 kW per inverter leg, making the device appropriate for residential and small commercial string inverters. The TRENCHSTOP IGBT3 fast switching allows operation at 16-20 kHz, balancing efficiency and magnetics size. Combined with the IDH15S120 SiC diode, the system achieves high efficiency (above 98%) across a wide load range, critical for solar energy yield.
Recommandé
Uninterruptible Power Supplies (UPS)
The IGW25N120H3FKSA1 is well matched to online UPS systems in the 5-15 kW range. The inverter stage uses the IGBT in a full-bridge topology at 20 kHz PWM to produce clean 50/60 Hz AC output. The 1200V VCE rating supports 600-800V DC bus operation, while 25A nominal current handles the typical 10-15 kVA ratings. Low VCE(sat) of 2.05V keeps conduction loss under 50W per device at full load, which is essential for UPS energy efficiency ratings (above 96%). The high-speed turn-off behavior also helps meet the THD requirements of IEC 62040-3 for output voltage quality.
Recommandé
Induction Heating
Resonant induction heating inverters benefit from the IGW25N120H3FKSA1's combination of high VCE (1200V), low VCE(sat) (2.05V), and fast TRENCHSTOP switching. Operating at 20-100 kHz in LLC or series resonant half-bridge topologies, the IGBT handles the high-peak current of the resonant tank while minimizing both conduction and turn-off losses. The TO-247 package's robust thermal performance supports the high current pulses characteristic of induction heating. When paired with the SiC diode IDH15S120, the system achieves high efficiency (above 95%) and fast response to varying load conditions, important for cooktop and industrial heating applications.
Recommandé
Welding Equipment
The IGW25N120H3FKSA1 is widely used in inverter-based welding machines. The 1200V VCE rating handles the rectified 400-500V AC mains, and the 25A nominal current supports 200-300A welding output current at moderate duty cycle. The TRENCHSTOP IGBT3 technology's low conduction loss (2.05V VCE(sat) at 25A) reduces heat generation, allowing more compact welding inverter designs. The high peak current capability (50A at TC=25C) handles the inrush during arc striking. Combined with a fast external SiC diode, the welding machine achieves the fast dynamic response required for stable arc performance in MIG, TIG, and stick welding.
Recommandé
Switch-Mode Power Supplies (SMPS) for Industrial
Industrial SMPS in the 3-10 kW range often use the IGW25N120H3FKSA1 in the PFC (power factor correction) and DC-DC stages. The 1200V VCE rating supports 800V DC bus operation, and 25A nominal current matches 5-7 kW continuous output power. The TRENCHSTOP IGBT3 fast switching enables PFC operation above 50 kHz, reducing magnetics size and overall SMPS weight. Low VCE(sat) of 2.05V keeps full-load efficiency above 95%, important for industrial energy compliance regulations. The part pairs with the SiC diode IDH15S120 in bridgeless PFC designs for highest efficiency.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IGW25N120H3FKSA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IKW25N120H3 | IKW25N120H3FKSA1 | IGW60T120FKSA1 | STGW25H120DF2 | FGH25N120FTD |
|---|---|---|---|---|---|---|
| Package | TO-247-3-1 (PG-TO247-3-1) | TO-247-3-1 - same | TO-247-3-1 - same | TO-247-3-1 - same | TO-247-3-1 - same | TO-247-3-1 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| Collector-Emitter Voltage (VCE) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Nominal Collector Current (IC) at TC=100C | 25 A | 25 A | 25 A | 60 A | 25 A | 25 A |
| VCE(sat) (typical at 25A, 15V VGE) | 2.05 V | 2.05 V | 2.05 V | 1.85 V | 1.95-2.1 V | 2.0 V |
| Co-packed Diode | No (external SiC recommended) | Yes (co-pack anti-parallel) | Yes (co-pack anti-parallel) | No | Yes (co-pack anti-parallel) | Yes (co-pack anti-parallel) |
| Maximum Power Dissipation (Ptot) | 326 W | 326 W | 326 W | 375 W | 313 W | 313 W |
| Technology | TRENCHSTOP IGBT3 | TRENCHSTOP IGBT3 | TRENCHSTOP IGBT3 | TRENCHSTOP | Trench Gate Field Stop | Field Stop Trench |
| Unit Price (qty 1, USD, as of 2026-09-15) | $5.62 | $6.76 | $6.76 | $7.20 | $5.30 | $4.95 |
Principaux différenciateurs
- Discrete IGBT only (no co-pack diode) for maximum design flexibility with external SiC diode (vs IKW25N120H3)
- TRENCHSTOP IGBT3 technology with MOSFET-like turn-off behavior (vs FGH25N120FTD)
- 25A nominal current with 326W power dissipation in TO-247 package (vs IGW60T120FKSA1)
- Infineon TRENCHSTOP IGBT3 quality and supply chain stability (vs STGW25H120DF2)
Notes de conception
The TO-247-3-1 package has a junction-to-case thermal resistance of approximately 0.38 C/W (typical for this package class). At maximum rated power dissipation of 326W with TC=25C, the junction temperature would reach its 175C limit immediately - a substantial heatsink is mandatory. For a typical application at 100W dissipation, the heatsink must have thermal resistance below (TJ(max) - TA)/Pdiss = (150-70)/100 = 0.8 C/W to maintain reliable operation. Always use thermal interface material (TIM) with thermal conductivity above 3 W/mK between the package and heatsink.
Keep the gate drive loop as short as possible - ideally under 2 cm total loop length from the gate driver output through the gate-emitter connection back to the driver return. The IGBT's fast switching transitions (typically under 100 ns) can produce significant voltage overshoot if the gate loop inductance is too high. Use a gate resistor of 10-47 ohm to balance switching loss and EMI. Place a 10 nF ceramic bypass capacitor close to the VGE supply pin of the gate driver for each IGBT. The recommended external SiC diode IDH15S120 should be placed adjacent to the IGBT with minimal commutation loop inductance.
Do not exceed the maximum VGE of +/- 20V; gate drive should be a regulated 15V for turn-on and 0V (or -5V to -15V) for turn-off. A negative turn-off voltage improves noise immunity in high dv/dt applications. Verify that VCE never exceeds 1200V under any transient condition including stray inductance ringing - add a snubber (RC or RCD) if ringing exceeds 80% of the breakdown voltage. The device is a single IGBT only (no co-pack diode), so an external SiC diode such as the IDH15S120 must be added for freewheeling current path. Confirm the SiC diode has adequate surge current rating for the application.
Conduction loss at full load (25A) with VCE(sat)=2.05V is approximately 51W per device, representing about 15-20% of the total loss budget in a typical inverter. Switching loss depends heavily on switching frequency and DC bus voltage - at 20 kHz with 600V bus, expect 30-50W of switching loss per device. For applications requiring higher efficiency, consider the newer TRENCHSTOP IGBT4 family (e.g., IKW40N120H3) which offers lower total loss at similar current ratings. Total power loss budget should account for both conduction and switching components, with adequate margin for thermal design.
Informations de conformité
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified (industrial/renewable energy grade only). Halogen-free status not explicitly stated in available data.
