IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon
Référence : IPG20N04S4L08AATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.21 | $12,10 |
| 100 | $0.95 | $95,00 |
| 500 | $0.78 | $390,00 |
| 1 000 | $0.66 | $660,00 |
IPG20N04S4L08AATMA1 Présentation
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source terminals when the gate-to-source voltage exceeds the threshold. The IPG20N04S4L-08 is built on Infineon's OptiMOS-T2 trench technology, which minimizes the on-state resistance per unit silicon area. In a dual configuration, the part is hierarchically classified as: dual MOSFET -> MOSFET array -> discrete semiconductor -> power semiconductor -> semiconductor. Logic-level compatibility (4.5V gate drive) lets it interface directly with microcontrollers and low-voltage gate drivers without bootstrap or level-shifting circuitry.
Key features include 8.2 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10V, logic-level V<sub>GS(th)</sub> typically 1.7V, 100% avalanche-tested, RoHS-compliant green product, and wettable-flank leads that support automated optical inspection (AOI). The PG-TDSON-8-10 package exposes a thermal pad that drops junction-to-ambient thermal resistance below 50°C/W on a standard 1 oz copper JEDEC EIA/JESD51 2s2p test board. 175°C maximum junction temperature and 54W power dissipation provide substantial thermal margin for high-current pulse loads.
The two N-channels share the same die family but are isolated for half-bridge, synchronous-rectifier, dual-switch, or back-to-back load-switch topologies. With 8.2 mΩ per channel, total conduction loss at 10A per channel equals approximately 0.82W, an excellent figure for a single 5x6mm outline. The part also supports continuous 20A per channel and pulsed drain currents substantially higher for inrush and motor-start events.
Typical applications include automotive 12V/24V load switching (HVAC blowers, fuel pumps, solenoid drivers), DC-DC converter synchronous-rectifier stages, motor-driver H-bridges, eBike and e-scooter controller switches, battery management protection FETs, and dual low-side PWM loads. The AEC-Q101 grade and wettable flank make it especially well suited to safety-relevant body-electronics modules where solder-joint inspection and long-term reliability are mandatory.
When designing with this device, calculate conduction loss as P = I² × R<sub>DS(on)</sub> × (1 + 0.005 × (Tj - 25)) to account for the positive temperature coefficient. Ensure V<sub>GS</sub> rises fully above 10V at the gate pin to guarantee the datasheet R<sub>DS(on)</sub>; 4.5V V<sub>GS</sub> will substantially increase losses. Place gate-source resistors of 10-100 kΩ to hold each MOSFET off during controller reset.
This page consolidates distributor pricing, drop-in alternatives in the same PG-TDSON-8-10 footprint, and practical design notes drawn from the Infineon OptiMOS-T2 40V family datasheet - information not available on a single manufacturer or distributor page.
Alternatives de remplacement direct pour IPG20N04S4L08AATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPG20N04S4L08AATMA1 (même facteur de forme et même empreinte) — différant par Package, Mounting Type, AEC-Q101 Qualification, FET Type, MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPG20N04S4L-08
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPG20N04S4-08
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPG20N04S4L08ATMA1
✅ Remplacement direct✓ En stock
$0.89 / unité
Voir la fiche technique →IPC50N04S5L5R5ATMA1
✅ Remplacement direct✓ En stock
$0.36 / unité
Voir la fiche technique →IAUCN04S7L042GATMA1
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →IPG20N04S4L08AATMA1 Valeurs maximales et caractéristiques électriques
| FET Type | Dual N-Channel |
| Technology | OptiMOS-T2 (Logic Level) |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) @ TC=25°C | 20 A (per channel) |
| On-Resistance R<sub>DS(on)</sub> max @ VGS=10V | 8.2 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> typ | 1.7 V |
| Gate Drive (Logic Level) | 4.5 V |
| Power Dissipation (PD) @ TC=25°C | 54 W |
| Température de jonction en fonctionnement | -55°C to +175°C |
| Boîtier | PG-TDSON-8-10 (Wettable Flank) |
| Type de montage | Surface Mount |
| AEC-Q101 Qualification | Yes |
| Peak Reflow Temperature | 260°C |
| Avalanche Rated | Yes (100% tested) |
| RoHS / REACH | Compliant (Green Product) |
| AOI Compatible | Yes (Wettable Flank) |
Configuration des broches de IPG20N04S4L08AATMA1
| Broche 1 | Source 1 (S1) — Source of MOSFET 1 |
| Broche 2 | Gate 1 (G1) — Gate of MOSFET 1 |
| Broche 3 | Source 1 (S1) — Source of MOSFET 1 (kelp) |
| Broche 4 | Drain 1 (D1) — Drain of MOSFET 1 |
| Broche 5 | Drain 2 (D2) — Drain of MOSFET 2 |
| Broche 6 | Source 2 (S2) — Source of MOSFET 2 (kelp) |
| Broche 7 | Gate 2 (G2) — Gate of MOSFET 2 |
| Broche 8 | Source 2 (S2) — Source of MOSFET 2 |
| Broche 9 | Thermal Pad — Drain connection to PCB thermal pad |
Zone de fonctionnement sûr (TC=25°C, single pulse)
Applications typiques
IPG20N04S4L08AATMA1 convient pour 6 applications: 12V/24V Automotive Load Switching, DC-DC Converter Synchronous Rectifier, H-Bridge Motor Driver, Battery Management Protection FET, eMobility and eBike Motor Control, Dual Low-Side PWM Load Driver.
12V/24V Automotive Load Switching
The IPG20N04S4L08AATMA1 is well matched to 12V and 24V automotive load switching for HVAC blowers, fuel pumps, seat heaters, and LED headlamp drivers. Its 40V VDS easily absorbs ISO 7637-2 load-dump transients up to 35V, while the 8.2 mΩ R<sub>DS(on)</sub> keeps conduction loss under 2W at 15A continuous per channel. The AEC-Q101 grade and 175°C junction rating qualify it for under-hood ambient temperatures above 125°C, and the dual-channel TDSON-8-10 footprint halves PCB area compared to two discrete DPAK parts, which is critical for space-constrained body-control modules.
Recommandé
DC-DC Converter Synchronous Rectifier
As a synchronous rectifier in 12V-to-low-voltage buck converters, the IPG20N04S4L08AATMA1 reduces body-diode loss and improves efficiency versus Schottky-diode designs. The two integrated N-channels drive the high-side and low-side switch of a non-isolated buck topology, with the 4.5V logic-level gate threshold allowing direct interface to 5V gate drivers and many microcontroller PWM outputs. At 8.2 mΩ R<sub>DS(on)</sub> per channel, total conduction loss at 15A equals about 1.85W, manageable in a 1 oz copper 1 square inch thermal pad layout.
Recommandé
H-Bridge Motor Driver
The dual N-channel configuration of the IPG20N04S4L08AATMA1 enables a complete H-bridge using only two packages - one per motor phase. Used in pairs, the part provides forward, reverse, and brake control of brushed DC motors in eBike controllers, e-scooters, power tools, and HVAC damper actuators. 20A continuous per channel supports small BLDC/PMSM motors up to 200W without heatsinking beyond the PCB copper pour, and the 175°C junction temperature ceiling provides robustness during locked-rotor inrush events.
Recommandé
Battery Management Protection FET
The IPG20N04S4L08AATMA1 functions as charge and discharge protection MOSFETs in 12V/24V battery management systems. With 8.2 mΩ R<sub>DS(on)</sub> in a 5x6mm outline, the dual-channel configuration delivers both FETs in a single package, minimizing PCB area inside the BMS housing. The 100% avalanche-tested rating gives extra margin during cell-voltage miswiring, and the 175°C Tj rating tolerates the heat generated during sustained 100A fault-current interruption before the pack fuse clears.
Recommandé
eMobility and eBike Motor Control
Pedelec and e-scooter motor controllers benefit from the IPG20N04S4L08AATMA1's 40V VDS headroom, logic-level gate drive, and dual-channel integration. The two MOSFETs implement a compact three-phase inverter leg when three devices are used together, with the 8.2 mΩ R<sub>DS(on)</sub> keeping inverter losses under 3% at 250W continuous. The wettable-flank package supports the AOI solder inspection required by eMobility OEMs, and AEC-Q101 grade ensures long-term reliability in outdoor temperature swings from -20°C to +85°C.
Recommandé
Dual Low-Side PWM Load Driver
For dual-channel low-side PWM driving of solenoids, relays, and LED bars, the IPG20N04S4L08AATMA1's two independent N-channels allow one package per two loads. The 4.5V logic-level gate threshold lets microcontrollers and gate drivers switch each MOSFET directly, while the 20A continuous rating handles inductive kick-back inside the SOA when paired with a flyback diode. The 175°C Tj ceiling and wettable-flank terminals make the part equally suitable for body-electronics modules and industrial solenoid controllers.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPG20N04S4L08AATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPG20N04S4L-08 | IPG20N04S4-08 | IPG20N04S4L08ATMA1 | IPC50N04S5L5R5ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-10 | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS (V) | 40 | 40 | 40 | 40 | 40 | 40 |
| RDS(on) max (mΩ) @ VGS=10V | 8.2 | 8.2 | 7.6 | 8.2 | 5.5 | 4.2 |
| Technology | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-5 | OptiMOS-7 |
| Automotive Grade (AEC-Q101) | Yes | No | No | No (AATMA1 has AA) | Yes | Yes |
| Wettable Flank | Yes | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- AEC-Q101 automotive grade with wettable-flank TDSON-8-10 (vs IPG20N04S4L-08 (base part number))
- OptiMOS-T2 40V trench technology at 8.2 mΩ in TDSON-8-10 (vs IPC50N04S5L5R5ATMA1 (OptiMOS-5))
- Dual N-channel integration in a single 5x6mm package (vs Two discrete MOSFETs in DPAK)
Notes de conception
Estimated: at 15A continuous per channel, 8.2 mΩ on-resistance, and 4.5V gate drive, each MOSFET dissipates roughly I² × R = 1.85W. With PG-TDSON-8-10 thermal pad reflowed to a 1 oz copper 1 square inch pour on a 4-layer JEDEC 2s2p board, junction-to-ambient resistance is about 50°C/W, so the junction temperature rises about 92°C above ambient. For under-hood designs with 85°C ambient, derate to 13A per channel to keep Tj below 175°C. A larger copper pour or forced-air cooling raises continuous current headroom significantly.
Solder the central thermal pad directly to a 5x6mm copper pour on the top layer and stitch it to inner-layer ground planes with at least four 0.3mm thermal vias. Place gate-drive traces less than 10mm long to limit gate-loop inductance, and add a 10-100 kΩ gate-source resistor on each channel to hold the MOSFET off during microcontroller reset. Keep high-current source traces at least 0.5mm wide per ampere to avoid 30°C copper-temperature rise, and route drain and source traces in opposite directions to minimize parasitic source inductance.
Although the IPG20N04S4L08AATMA1 is logic-level, drive the gate to 10V (not 4.5V) whenever the application can provide it, because R<sub>DS(on)</sub> at 4.5V V<sub>GS</sub> is roughly 1.5x higher than at 10V. Add a small series gate resistor of 10-33Ω to damp ringing on the gate-loop LC network. For PWM frequencies above 50kHz, total gate charge (Q<sub>g</sub>) determines the required gate-driver current - check the datasheet Q<sub>g</sub> value and size the driver for Q<sub>g</sub> × f<sub>SW</sub> current capability. Source: Infineon OptiMOS-T2 40V family datasheet.
Common pitfalls: (1) Exceeding 40V VDS during unclamped inductive switching - always add a flyback diode or TVS clamp across inductive loads, because the part is avalanche-rated but repeated unclamped events degrade it. (2) Driving the gate directly from a 3.3V GPIO - this leaves the MOSFET in the linear region and overheats it. (3) Ignoring positive temperature coefficient of R<sub>DS(on)</sub>, which rises about 0.5% per °C above 25°C. (4) Confusing the IPG20N04S4L-08 (industrial) with the IPG20N04S4L08AATMA1 (AEC-Q101) - always verify the full ordering code on the reel label for safety-critical automotive designs.
Informations de conformité
AEC-Q101 qualified (automotive), RoHS compliant green product, 100% avalanche tested, wettable flank supports AOI. Source: Infineon IPG20N04S4L-08 datasheet features list.
