SE10P3F10U5.0MB - 5V TVS/ESD Diode Array DFN1006-3L | Semiware
Référence : SE10P3F10U5.0MB ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.08 | $0,08 |
| 10 | $0.07 | $0,70 |
| 100 | $0.055 | $5,50 |
| 500 | $0.042 | $21,00 |
| 1 000 | $0.035 | $35,00 |
| 3 000 | $0.028 | $84,00 |
SE10P3F10U5.0MB Présentation
A TVS (Transient Voltage Suppressor) diode array is a unidirectional or bidirectional protection device that shunts fast overvoltage transients to ground, clamping the line to a safe voltage and protecting downstream CMOS or analog ICs. As a sub-family of surge protectors, TVS arrays sit inside the broader discrete semiconductor taxonomy: TVS/ESD diode -> surge protector -> discrete semiconductor -> semiconductor. They are typically placed at connector entry points and high-speed data lines where external cable-borne transients are most likely to couple in.
Key features of the SE10P3F10U5.0MB include the 5V standoff voltage suitable for HDMI, USB 2.0, VGA and similar high-speed interfaces, a sub-nanosecond response time, a low clamping voltage under surge, and a tiny DFN1006-3L footprint that places the protection within 2mm of the connector for minimum loop inductance. The device is built on Semiware's planar TVS process optimized for low capacitance and high surge-current handling.
Technical depth: the array uses a steering-diode plus clamp-Zener topology. Each I/O line is clamped by an internal TVS element that conducts during a transient, while steering diodes route positive surges to VCC and negative surges to GND. The 5.0V working voltage aligns with common logic levels and is below the typical 5.5V supply rail, ensuring that normal signal swings do not turn on the protector.
Typical applications include HDMI/USB/VGA port ESD protection, smartphone and tablet charging-port protection, and any 5V high-speed signal line exposed to user contact. The ultra-compact DFN1006-3L package is ideal for space-constrained mobile designs where every square millimeter matters.
When designing with this device, place the protection array as close as possible to the connector body and use a ground via directly beneath the package thermal/exposed pad. Avoid routing protected traces under the array, and pair it with a bulk TVS at the system entry point for two-stage protection.
This page synthesizes distributor availability, drop-in alternatives, and application notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour SE10P3F10U5.0MB — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
TPSE10P3F10U5.0MB-SP
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
PESD5V0L1BA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ESDA5V0L1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ESD5V0L1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SEMCO5V0L1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SE10P3F10U5.0MB Valeurs maximales et caractéristiques électriques
| Manufacturer | Semiware |
| Product Type | ESD Protection Diode Array (TVS) |
| Working Voltage (Vrwm) | 5.0 V |
| Channel Configuration | Single channel (unidirectional) |
| Boîtier | DFN1006-3L (1.0 mm x 0.6 mm) |
| Type de montage | Surface Mount |
| ESD Rating (Air, IEC 61000-4-2) | ±17 kV |
| ESD Rating (Contact, IEC 61000-4-2) | ±15 kV |
| EFT Rating (IEC 61000-4-4, 5/50 ns) | 40 A |
| Response Time | < 1 ns (nanosecond class) |
| Leakage Current | Low (nA class) |
| Statut RoHS | Compliant |
| Automotive Grade | No (standard commercial); see TPSE10P3F10U5.0MB-SP for AEC-Q101 equivalent |
Configuration des broches de SE10P3F10U5.0MB
| Broche 1 | IO — Protected I/O line (signal to clamp) |
| Broche 2 | GND — Ground reference (common cathode/anode return) |
| Broche 3 | NC — Not connected (per datasheet) / optional VCC tie for unidirectional |
Applications typiques
SE10P3F10U5.0MB convient pour 6 applications: HDMI Port ESD Protection, USB 2.0 D+/D- Line Protection, Smartphone / Tablet Charging Port, VGA Connector ESD Clamp, Industrial Sensor IO Protection, SD Card / MicroSD Slot Protection.
HDMI Port ESD Protection
The SE10P3F10U5.0MB protects HDMI TMDS data lines and the 5V supply pin at the connector entry point. Its 5V working voltage aligns with HDMI's 5V rail and the 3.3V TMDS signal swing, so normal operation never triggers the clamp; only an ESD event conducts. The plus or minus 17kV air / plus or minus 15kV contact rating per IEC 61000-4-2 comfortably exceeds HDMI compliance requirements, and the sub-nanosecond response time clamps the surge before the HDMI receiver latches up. The DFN1006-3L 1.0mm x 0.6mm footprint fits behind even micro-HDMI connectors where board area is critical. Place the device within 2mm of the connector body with a direct ground via beneath the package pad.
Recommandé
USB 2.0 D+/D- Line Protection
USB 2.0 D+ and D- lines run at 480 Mbps and are directly user-accessible, making them the prime candidates for ESD events from cable insertion. The SE10P3F10U5.0MB clamps electrostatic discharge on each data line at the USB connector, with a working voltage of 5V matching USB VBUS and a sub-nanosecond response time that limits the clamping duration to nanoseconds. Two SE10P3F10U5.0MB devices (one per line) plus a third on VBUS provide complete protection for a USB 2.0 port. Compared with a switching regulator-based protection scheme, the TVS array adds zero continuous current draw and dissipates only the brief surge energy, making it ideal for battery-powered mobile designs.
Recommandé
Smartphone / Tablet Charging Port
Mobile phones and tablets require ESD protection at the USB charging connector that fits in less than 2 mm x 1 mm of PCB area. The SE10P3F10U5.0MB in DFN1006-3L is purpose-built for this: 1.0 mm x 0.6 mm footprint, plus or minus 17kV air rating to survive real-world user contact events, and nA-level leakage current that does not affect battery life. A typical implementation uses one device on the D+ line, one on the D- line, and one on the CC/VBUS line for USB-C. The 5V working voltage means the device does not interfere with the BC1.2 or USB-PD negotiation that happens on the data lines during charger attachment.
Recommandé
VGA Connector ESD Clamp
VGA connectors on monitors, projectors, and docking stations carry RGB analog signals up to 0.7V pp on 75 ohm coax, plus a 5V supply and DDC I2C lines. The SE10P3F10U5.0MB is placed on each of the 15 VGA pins to clamp ESD events that occur when users hot-plug the HD15 cable. The 5V working voltage covers the 5V VGA supply and the 5V-tolerable DDC lines, while the sub-nanosecond response time prevents the clamp from distorting the analog video signal. Compared with a TVS diode in SMA package, the DFN1006-3L footprint saves roughly 80 percent of PCB area and fits in the dense pin field behind a HD15 connector.
Recommandé
Industrial Sensor IO Protection
Industrial 4-20 mA loops, RS-485 ports, and GPIO lines all face harsh ESD and EFT transients in factory environments. The SE10P3F10U5.0MB's IEC 61000-4-2 plus or minus 17kV air rating plus its IEC 61000-4-4 40A EFT rating make it suitable for protecting each IO line at the field-side connector. The 5V working voltage covers 5V logic IO, and multiple devices can be placed in parallel for multi-channel ports. Compared with discrete Zener-based protection, the integrated TVS array provides matched clamping voltage across all channels, ensuring balanced protection and simplified BOM for multi-line industrial interfaces.
Recommandé
SD Card / MicroSD Slot Protection
MicroSD card slots are user-accessible and exposed to finger-contact ESD events during card insertion. The SE10P3F10U5.0MB protects each of the 8 SD card data and command lines plus the VDD line. Its DFN1006-3L package fits behind the microSD card holder where board area is limited, and the 5V working voltage matches the SD card's 3.3V signal swing (after level shifting) plus the 5V-tolerant card-detect lines. A typical implementation places one device per line, all within 2mm of the connector body, sharing a single ground via for low-inductance surge return.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SE10P3F10U5.0MB — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | TPSE10P3F10U5.0MB-SP | PESD5V0L1BA | ESDA5V0L1 | ESD5V0L1 | SEMCO5V0L1 |
|---|---|---|---|---|---|---|
| Package | DFN1006-3L | DFN1006-3L - same | DFN1006-3L - same | DFN1006-3L - same | DFN1006-3L - same | DFN1006-3L - same |
| Brand | Semiware | Semiware | Nexperia | STMicroelectronics | onsemi | Diodes Incorporated |
| Working Voltage (Vrwm) | 5.0 V | 5.0 V | 5.0 V | 5.0 V | 5.0 V | 5.0 V |
| Response Time | < 1 ns | < 1 ns | < 1 ns | < 1 ns | < 1 ns | < 1 ns (typical TVS array) |
| Automotive Grade (AEC-Q101) | No | Yes (AEC-Q101) | No (commercial PESD5V0L1BA-Q available) | No | No | No |
Principaux différenciateurs
- Documented ±17 kV air / ±15 kV contact ESD rating (vs PESD5V0L1BA)
- Automotive grade variant in same footprint (vs PESD5V0L1BA / ESDA5V0L1 / ESD5V0L1)
- Single-channel simplicity for point-to-point protection (vs USBLC6-2SC6 (multi-line TVS))
Notes de conception
Place the SE10P3F10U5.0MB within 2mm of the connector body to minimize the inductance of the unprotected trace length. The ground return path is critical: place a direct ground via immediately adjacent to the package ground pin (or exposed pad) with via-to-pad distance under 1mm to keep the parasitic inductance below 1 nH. Estimated: with 2mm trace length and 1 oz copper, trace inductance is approximately 1.5 nH; with a direct ground via, total loop inductance stays below 2 nH, keeping the clamp voltage under 40V during an 8kV contact discharge.
Do NOT route protected traces under the SE10P3F10U5.0MB package; the DFN1006-3L pad geometry will short the protected line to ground. Use a single TVS per signal line - paralleling multiple SE10P3F10U5.0MB devices on the same line does not improve clamping and may cause current hogging between mismatched devices. Always pair the SE10P3F10U5.0MB with a bulk TVS at the system entry point for two-stage protection.
Solder pad layout should follow the IPC-7351 DFN1006-3L land recommendation with 0.4mm x 0.6mm pads on each end and a 0.6mm x 0.4mm center pad for the ground/exposed pad. Use NSMD (non-solder-mask-defined) pads for the IO pins to maximize the solder fillet and improve mechanical reliability during thermal cycling. Keep a 0.2mm keep-out under the package body to avoid solder wicking under the device.
Informations de conformité
RoHS compliant per Semiware product page. AEC-Q101 qualification available via TPSE10P3F10U5.0MB-SP variant (automotive). Halogen-free per Semiware 1.0mm x 0.6mm DFN product family datasheet.
