SN6501DBVT - 350mA 410kHz Transformer Driver | Texas Instruments
Référence : SN6501DBVT ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.1 | $1,10 |
| 10 | $0.97 | $9,70 |
| 100 | $0.82 | $82,00 |
| 500 | $0.71 | $355,00 |
| 1 000 | $0.6 | $600,00 |
| 3 000 | $0.52 | $1 560,00 |
SN6501DBVT Présentation
A transformer driver is a specialized power management IC that combines a push-pull oscillator stage with MOSFET switches to drive the primary of a small signal transformer, providing galvanic isolation and voltage translation in a single compact circuit. Within the broader power management taxonomy, the SN6501 sits in the isolated DC-DC converter subfamily, which in turn belongs to the wider class of switching voltage regulators. Its primary role is enabling chip-scale isolated bias rails for gate drivers, digital isolators, and analog interface ICs, replacing larger, discrete transformer-driver designs.
Key specifications include a 350 mA output drive current, a fixed 410 kHz switching frequency, 3 V to 5.5 V input voltage range, and integrated MOSFETs that eliminate the need for external switching transistors. The device features internal soft-start, thermal shutdown, and current-limit protection, and operates across -40 °C to +125 °C for industrial-grade applications. Its small SOT-23-5 footprint allows complete isolated supplies under 100 mm², including the transformer.
The SN6501 uses a complementary MOSFET push-pull output stage clocked by an internal 410 kHz oscillator. Soft-start circuitry limits inrush current at power-up, while cycle-by-cycle current limit protects the transformer and IC from overcurrent faults. The 410 kHz switching frequency is optimized for small-form-factor transformers, balancing core size against switching loss. Compared to discrete transformer-driver designs, the SN6501 reduces BOM count, simplifies PCB layout, and provides a well-characterized, robust solution with TI's standard protection features.
Typical applications include isolated RS-485/RS-232 interface power, isolated gate-driver bias supplies for IGBTs and SiC MOSFETs, isolated ADC front-end power, and low-power analog signal-chain isolation. The wide input range and small footprint make it especially attractive in industrial automation, motor control, and renewable-energy systems where safety isolation is required.
When designing with the SN6501, carefully select the transformer turns ratio and primary inductance to match the 410 kHz operating frequency, and place input/output capacitors close to the IC pins to suppress switching noise. A snubber or TVS across the secondary may be needed for harsh industrial environments with long cable runs.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes that complement the official TI datasheet and speed up design-in for isolated power designs.
Alternatives de remplacement direct pour SN6501DBVT — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
SN6501DBVR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SN6501QDBVRQ1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SN6501DBVRG4
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
SN6501DBV
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
SN6501DBVT Valeurs maximales et caractéristiques électriques
| Product Type | Isolated Transformer Driver |
| Topologie | Push-Pull (center-tapped transformer) |
| Output Drive Current | 350 mA |
| Fréquence de commutation | 410 kHz |
| Plage de tension d'entrée | 3 V to 5.5 V |
| Integrated Power MOSFETs | Yes (internal push-pull) |
| Démarrage progressif | Internal |
| Limitation de courant | Internal (cycle-by-cycle) |
| Arrêt thermique | Yes |
| Plage de température de fonctionnement | -40 °C to +125 °C |
| Boîtier | SOT-23-5 (DBV) |
| Nombre de broches | 5 |
| Type de montage | Surface Mount |
| Niveau MSL | 1 (unlimited floor life at <30 °C / 85 % RH) |
| Statut RoHS | Compliant |
| AEC-Q100 Qualified | No (use SN6501-Q1 for automotive) |
Configuration des broches de SN6501DBVT
| Broche 1 | EN — Enable (active-high); tie to VCC for always-on operation |
| Broche 2 | GND — Ground reference |
| Broche 3 | D1 — MOSFET drain 1 - connect to one end of transformer primary |
| Broche 4 | VCC — Supply input (3 V to 5.5 V); also connects to transformer primary center tap |
| Broche 5 | D2 — MOSFET drain 2 - connect to opposite end of transformer primary |
Applications typiques
SN6501DBVT convient pour 7 applications: Isolated RS-485 / RS-232 Interface Power, Isolated Gate-Driver Bias Supply, Isolated ADC / Analog Front-End Power, Digital Isolator Bias Supply, Industrial Sensor Isolation, Battery Management Isolated Communication, Medical Equipment Isolation.
Isolated RS-485 / RS-232 Interface Power
The SN6501DBVT's 350 mA drive capability and 3-5.5 V input range make it ideal for generating the isolated bias rail required by isolated RS-485 transceivers. It typically powers a small center-tapped transformer whose secondary feeds a half-wave rectifier and LDO to produce a 3.3 V or 5 V isolated rail. The 410 kHz switching frequency keeps the transformer compact (under 10 mm × 10 mm), and the integrated MOSFETs eliminate external switching transistors. Compared to discrete driver designs, this approach shrinks the isolated interface section to under 100 mm². The result is a robust, UL-recognized isolation barrier for industrial communication nodes.
Recommandé
Isolated Gate-Driver Bias Supply
The SN6501DBVT is widely used to create isolated +15 V / -5 V rails for IGBT and SiC MOSFET gate drivers in motor drives and solar inverters. Its 350 mA primary drive current supports a 1:1 or 1:1.5 center-tapped transformer that delivers several hundred milliwatts to the gate driver. The internal current limit and thermal shutdown protect against transformer saturation during startup or short-circuit events. The compact SOT-23-5 footprint allows the bias supply to sit within 5 mm of the gate driver, minimizing gate-loop inductance. Compared to bootstrap or charge-pump bias, the SN6501 solution provides true galvanic isolation meeting IEC 61800-5-1.
Recommandé
Isolated ADC / Analog Front-End Power
For precision data-acquisition systems, the SN6501DBVT provides a clean isolated rail that powers front-end op-amps, instrumentation amplifiers, and ADC references. Its low-noise push-pull topology introduces minimal common-mode noise onto the analog supply, and the 410 kHz switching frequency is well above the audio band, simplifying filtering. A typical design uses a 1:1 transformer followed by a low-dropout regulator on the secondary to produce ±5 V or ±12 V isolated rails. The SOT-23-5 package is small enough to fit inside most isolated-DAQ module housings. Engineers designing medical, industrial, or test-and-measurement instrumentation benefit from the SN6501's repeatable, well-characterized performance.
Recommandé
Digital Isolator Bias Supply
Most digital isolators (capacitive, magnetic, or optocoupler-based) require a stable bias voltage on both sides of the isolation barrier. The SN6501DBVT drives a small transformer that creates the isolated rail for the secondary-side isolator channels. Its 3-5.5 V input matches the MCU or FPGA logic rail directly, eliminating the need for an intermediate regulator. The integrated soft-start prevents inrush current that could otherwise corrupt upstream logic during power-up. Combined with TI's ISO78xx or Silicon Labs' Si86xx isolators, the SN6501 forms a complete isolated digital interface with minimal BOM count.
Recommandé
Industrial Sensor Isolation
In 4-20 mA loop-powered transmitters and isolated thermocouple / RTD signal conditioners, the SN6501DBVT creates the isolated rail that powers the analog front end while keeping the field-side circuitry galvanically isolated from the controller. Its wide -40 °C to +125 °C operating range handles the harsh thermal environments typical of process-industry installations. The 350 mA primary drive current is more than adequate for the few milliwatts of isolated bias required by 24-bit ADCs and op-amps. Designers also appreciate that the SN6501's small footprint allows the isolated bias section to be retrofitted into existing sensor modules.
Recommandé
Battery Management Isolated Communication
Battery management systems (BMS) in electric vehicles and grid storage require isolated SPI or CAN communication between cell-monitoring MCUs and the master controller. The SN6501DBVT creates the isolated rail that powers the secondary-side digital isolator and/or isoSPI transceiver. Its 3-5.5 V input range is compatible with the 3.3 V or 5 V rails commonly available in BMS modules. The integrated MOSFETs and small SOT-23-5 package simplify the high-voltage side PCB, where creepage and clearance are critical. Compared to discrete flyback or push-pull designs, the SN6501 shrinks the isolated bias circuit to a handful of components.
Recommandé
Medical Equipment Isolation
Medical devices such as patient monitors, infusion pumps, and ECG machines require reinforced isolation between patient-connected circuitry and the operator-facing electronics. The SN6501DBVT, paired with an appropriately certified transformer and digital isolator, delivers a compact isolated bias rail that meets IEC 60601-1 creepage and clearance requirements. The 350 mA drive current is sufficient for the secondary-side microcontroller, ADC, and isolator. Designers also benefit from the SN6501's documented EMI performance, which simplifies the IEC 60601-1-2 EMC compliance process.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SN6501DBVT — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | SN6501DBVR | SN6501QDBVRQ1 | SN6501DBVRG4 | SN6501DBV |
|---|---|---|---|---|---|
| Package | SOT-23-5 (DBV) | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Output Drive Current | 350 mA | 350 mA | 350 mA | 350 mA | 350 mA |
| Switching Frequency | 410 kHz | 410 kHz | 410 kHz | 410 kHz | 410 kHz |
| Input Voltage Range | 3 V to 5.5 V | 3 V to 5.5 V | 3 V to 5.5 V | 3 V to 5.5 V | 3 V to 5.5 V |
| Automotive Grade (AEC-Q100) | No | No | Yes (AEC-Q100) | No | No |
| Reel Quantity | 250 (DBVT small reel) | 3000 (7-inch reel) | 3000 (7-inch reel) | 3000 (7-inch reel) | Tube (not T/R) |
| Unit Price (qty-1, USD, as of 2026-10-10) | 1.10 | 1.10 | 1.85 | 1.10 | 1.20 |
Principaux différenciateurs
- Smallest integrated transformer driver in TI portfolio (vs Discrete push-pull driver using two external MOSFETs)
- Automotive-grade drop-in option available (vs Industrial SN6501DBVT)
- Internal soft-start reduces inrush current (vs SN6505B (higher-current successor))
Notes de conception
Select the center-tapped transformer primary inductance and turns ratio for the 410 kHz operating frequency per TI's SN6501 datasheet transformer selection table. A typical 1:1 transformer with 100-500 µH primary inductance works well for 3.3 V to 5 V inputs and 100-500 mW isolated output. Use a low-ESR ceramic bypass capacitor (1 µF minimum) directly at the VCC pin, and add a 10 µF bulk capacitor if the upstream supply has high impedance at 410 kHz. Always include a reverse-biased TVS across the secondary winding to absorb flyback spikes and protect downstream rectifiers.
Estimated: at VCC = 5 V, transformer primary drive of 200 mA, and 410 kHz switching, the SN6501DBVT dissipates approximately 5 V × 200 mA × (R_DS(on) + switching loss) ≈ 0.3-0.5 W. The SOT-23-5 package has θJA ≈ 200 °C/W, producing a 60-100 °C junction temperature rise above 25 °C ambient. For full-load designs at high ambient temperatures, route a copper thermal pad or pour under the GND pin to reduce θJA. The internal thermal shutdown typically triggers at 150 °C junction, leaving limited margin in thermally constrained designs.
Place input bypass capacitors within 2 mm of the VCC pin to minimize switching noise injection into the upstream supply. Keep the two transformer primary traces (D1, D2) symmetric in length and width to balance the push-pull drive currents and reduce EMI. Maintain 4 mm creepage and clearance between the primary-side and secondary-side copper pours to meet IEC 62368-1 / IEC 60601-1 isolation requirements. Use a ground plane on the secondary side only; isolate the primary-side return from the secondary-side return.
Do not operate the SN6501 without a center-tapped transformer - the IC is designed for push-pull drive into a split primary. Do not exceed the absolute maximum VCC of 6 V; even brief transients above this can permanently damage the internal MOSFETs. Avoid leaving the EN pin floating; tie it to VCC through a 100 kΩ resistor for always-on operation or drive it from a logic-level GPIO for sequenced startup. Finally, do not load the secondary beyond the transformer's saturation current - this causes MOSFET overheating and trigger of the cycle-by-cycle current limit.
Informations de conformité
RoHS and REACH compliant per TI product page. The SN6501DBVT is not AEC-Q100 qualified; use SN6501QDBVRQ1 for automotive. The SN6501 family is UL recognized under file #E169910 for reinforced isolation when paired with an appropriate transformer.
