STD10N60DM2 - 600V 10A N-Channel MDmesh DM2 MOSFET | STMicroelectronics
Référence : STD10N60DM2 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.8864 | $0,89 |
| 10 | $0.6402 | $6,40 |
| 100 | $0.5663 | $56,63 |
| 500 | $0.5417 | $270,85 |
| 1 000 | $0.517 | $517,00 |
| 2 500 | $0.5076 | $1 269,00 |
STD10N60DM2 Présentation
A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch or amplifier in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are fundamental components in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient power conversion and control. They are part of the broader family of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management.
Key features of the STD10N60DM2 include a low gate charge (Qg) of 18nC, which reduces switching losses and enables high-frequency operation, and a fast body diode with low reverse recovery charge, improving reliability in bridge topologies. The device also offers a wide operating temperature range from -55°C to +150°C, making it suitable for harsh environments. Its avalanche ruggedness is rated at 4.5A, ensuring robustness under extreme conditions.
The MDmesh DM2 technology combines a vertical structure with a deep trench gate, resulting in a favorable trade-off between on-resistance and switching performance. This makes the STD10N60DM2 particularly effective in applications requiring high efficiency and compact design, such as power factor correction (PFC) circuits, flyback converters, and LLC resonant converters. The low thermal resistance of the DPAK package (3.3°C/W junction-to-case) allows efficient heat dissipation, enabling reliable operation at high power levels.
Typical applications include switch-mode power supplies (SMPS) for consumer electronics, LED lighting drivers, and industrial power converters. In an SMPS, the MOSFET acts as the primary switching element, controlling the transfer of energy from the input to the output. Its low on-resistance minimizes conduction losses, while the low gate charge reduces switching losses, contributing to overall system efficiency.
When designing with the STD10N60DM2, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Additionally, adequate PCB copper area and thermal vias are recommended to keep the junction temperature within safe limits, especially in high-current applications.
Alternatives de remplacement direct pour STD10N60DM2 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STF10N60DM2
📋 Alternative de référence (hors catalogue)
STD10N60M2
📋 Alternative de référence (hors catalogue)
IPD60R360P7
📋 Alternative de référence (hors catalogue)
R6007JNX
📋 Alternative de référence (hors catalogue)
STD10N60DM2 Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 10 A |
| Continuous Drain Current (ID) at 100°C | 6.3 A |
| Pulsed Drain Current (IDM) | 30 A |
| On-Resistance (RDS(on)) | 0.45 Ω typical |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Charge (Qg) | 18 nC |
| Input Capacitance (Ciss) | 650 pF |
| Output Capacitance (Coss) | 60 pF |
| Reverse Transfer Capacitance (Crss) | 3 pF |
| Avalanche Current (IAR) | 4.5 A |
| Plage de température de fonctionnement | -55°C to +150°C |
| Boîtier | DPAK (TO-252) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
Configuration des broches de STD10N60DM2
| Broche 1 | Gate — Gate drive input |
| Broche 2 | Drain — Drain terminal |
| Broche 3 | Source — Source terminal |
| Broche 4 | Drain (tab) — Drain terminal (connected to tab) |
Zone de fonctionnement sûr
Applications typiques
STD10N60DM2 convient pour 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Industrial Power Converters, Solar Inverters, Motor Drives.
Switch-Mode Power Supplies (SMPS)
The STD10N60DM2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a typical flyback converter, the MOSFET switches at high frequency to transfer energy from the primary to the secondary side. Its low gate charge (18nC) reduces switching losses, while the low RDS(on) minimizes conduction losses, improving overall efficiency. The DPAK package allows compact PCB layouts, and the wide operating temperature range ensures reliability in demanding environments. Designers should ensure proper gate drive voltage (10V) and adequate heat sinking to maintain junction temperature within limits.
Recommandé
Power Factor Correction (PFC)
In PFC circuits, the STD10N60DM2 operates in boost converter topology to shape the input current waveform. Its 600V rating provides sufficient margin for the boosted voltage (typically 400V). The low gate charge enables high-frequency operation, reducing the size of magnetic components. The fast body diode with low reverse recovery charge minimizes losses during continuous conduction mode. The device's avalanche ruggedness (4.5A) ensures robustness against voltage spikes. For optimal performance, use a dedicated PFC controller and ensure proper gate drive and snubber circuits.
Recommandé
LED Lighting Drivers
The STD10N60DM2 is suitable for LED drivers, particularly in offline applications. Its high voltage rating allows direct connection to rectified mains (up to 380V). The low on-resistance reduces power dissipation, improving efficiency and reducing heat generation. The DPAK package is compact, fitting into small LED driver enclosures. The device's fast switching capability supports high-frequency operation, enabling smaller transformer and inductor sizes. Designers should consider thermal management, as LED drivers often operate in enclosed fixtures with limited airflow.
Recommandé
Industrial Power Converters
In industrial power converters, such as DC-DC converters and inverters, the STD10N60DM2 provides reliable switching at high voltages. Its 600V rating is suitable for 3-phase rectified supplies (around 560V). The low thermal resistance (3.3°C/W) allows efficient heat dissipation when mounted on a heatsink. The device's wide operating temperature range (-55°C to +150°C) makes it suitable for harsh industrial environments. For high-power applications, parallel devices may be used, but ensure proper gate drive and current sharing.
Recommandé
Solar Inverters
The STD10N60DM2 can be used in solar inverter applications, particularly in the DC-DC boost stage. Its high voltage rating handles the output of solar panels (up to 600V). The low on-resistance minimizes losses, improving the overall efficiency of the inverter. The device's fast switching capability supports maximum power point tracking (MPPT) algorithms that require rapid switching. The DPAK package is suitable for surface-mount assembly, reducing manufacturing costs. Ensure adequate cooling, as solar inverters often operate outdoors in high ambient temperatures.
Recommandé
Motor Drives
In motor drives, the STD10N60DM2 can be used in the inverter stage to drive AC motors. Its 600V rating is suitable for 230V AC motor drives. The low gate charge enables high-frequency PWM, reducing motor noise and improving control accuracy. The device's avalanche ruggedness protects against inductive spikes from the motor windings. The DPAK package allows compact designs, but for higher power, consider using TO-220 or D2PAK packages. Proper gate drive and dead-time control are essential to prevent shoot-through.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STD10N60DM2 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STD10N60M2 | IPD60R360P7 | R6007JNX |
|---|---|---|---|---|
| Package | DPAK (TO-252) | DPAK (TO-252) | DPAK (TO-252) | DPAK (TO-252) |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | ROHM Semiconductor |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 10 A | 10 A | 10 A | 7 A |
| On-Resistance (RDS(on)) | 0.45 Ω | 0.55 Ω | 0.36 Ω | 0.75 Ω |
| Gate Charge (Qg) | 18 nC | 20 nC | 15 nC | 22 nC |
| Input Capacitance (Ciss) | 650 pF | 700 pF | 600 pF | 800 pF |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Principaux différenciateurs
- Lower on-resistance compared to previous MDmesh M2 series (vs STD10N60M2)
- Lower gate charge for faster switching (vs STD10N60M2)
- Cross-brand alternative with lower on-resistance (vs IPD60R360P7)
Notes de conception
The STD10N60DM2 has a junction-to-case thermal resistance of 3.3°C/W. For a power dissipation of 10W, the junction temperature rise is 33°C above case temperature. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 150°C. In high-current applications, consider using a larger copper pour and thermal vias to improve heat dissipation.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-100Ω) to control switching speed and reduce EMI. The source pin should have a short, low-inductance path to the ground plane. For high-frequency operation, use a low-ESR ceramic capacitor (e.g., 100nF) near the drain and source pins for local decoupling.
Do not exceed the maximum gate-source voltage of ±25V. Ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the specified on-resistance. Avoid operating the device in the linear region for extended periods, as this can cause excessive power dissipation and thermal runaway. Also, be aware of the body diode's reverse recovery characteristics in bridge topologies; consider using a fast recovery diode in parallel if needed.
Informations de conformité
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive applications, consider ST's automotive-grade MOSFETs.
