STD10N60DM2 - 600V 10A N-Channel MDmesh DM2 MOSFET | STMicroelectronics
MPN: STD10N60DM2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.85 | $425.00 |
| 1,000 | $0.75 | $750.00 |
Drop-in alternatives for STD10N60DM2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
STD10N60M2
✅ Drop-In📋 Reference alternative (not in catalog)
IPD60R360P7
✅ Drop-In📋 Reference alternative (not in catalog)
R6007JNX
✅ Drop-In📋 Reference alternative (not in catalog)
STD10N60DM2 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 10 A |
| Continuous Drain Current (ID) at 100°C | 6.3 A |
| Pulsed Drain Current (IDM) | 30 A |
| On-Resistance (RDS(on)) | 0.45 Ω typical |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Charge (Qg) | 18 nC |
| Input Capacitance (Ciss) | 650 pF |
| Output Capacitance (Coss) | 60 pF |
| Reverse Transfer Capacitance (Crss) | 3 pF |
| Avalanche Current (IAR) | 4.5 A |
| Operating Temperature Range | -55°C to +150°C |
| Package | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
STD10N60DM2 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Drain (tab) — Drain terminal (connected to tab) |
Safe Operating Area
Typical Applications
STD10N60DM2 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Industrial Power Converters, Solar Inverters, Motor Drives.
Switch-Mode Power Supplies (SMPS)
The STD10N60DM2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a typical flyback converter, the MOSFET switches at high frequency to transfer energy from the primary to the secondary side. Its low gate charge (18nC) reduces switching losses, while the low RDS(on) minimizes conduction losses, improving overall efficiency. The DPAK package allows compact PCB layouts, and the wide operating temperature range ensures reliability in demanding environments. Designers should ensure proper gate drive voltage (10V) and adequate heat sinking to maintain junction temperature within limits.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STD10N60DM2 operates in boost converter topology to shape the input current waveform. Its 600V rating provides sufficient margin for the boosted voltage (typically 400V). The low gate charge enables high-frequency operation, reducing the size of magnetic components. The fast body diode with low reverse recovery charge minimizes losses during continuous conduction mode. The device's avalanche ruggedness (4.5A) ensures robustness against voltage spikes. For optimal performance, use a dedicated PFC controller and ensure proper gate drive and snubber circuits.
Recommended
LED Lighting Drivers
The STD10N60DM2 is suitable for LED drivers, particularly in offline applications. Its high voltage rating allows direct connection to rectified mains (up to 380V). The low on-resistance reduces power dissipation, improving efficiency and reducing heat generation. The DPAK package is compact, fitting into small LED driver enclosures. The device's fast switching capability supports high-frequency operation, enabling smaller transformer and inductor sizes. Designers should consider thermal management, as LED drivers often operate in enclosed fixtures with limited airflow.
Recommended
Industrial Power Converters
In industrial power converters, such as DC-DC converters and inverters, the STD10N60DM2 provides reliable switching at high voltages. Its 600V rating is suitable for 3-phase rectified supplies (around 560V). The low thermal resistance (3.3°C/W) allows efficient heat dissipation when mounted on a heatsink. The device's wide operating temperature range (-55°C to +150°C) makes it suitable for harsh industrial environments. For high-power applications, parallel devices may be used, but ensure proper gate drive and current sharing.
Recommended
Solar Inverters
The STD10N60DM2 can be used in solar inverter applications, particularly in the DC-DC boost stage. Its high voltage rating handles the output of solar panels (up to 600V). The low on-resistance minimizes losses, improving the overall efficiency of the inverter. The device's fast switching capability supports maximum power point tracking (MPPT) algorithms that require rapid switching. The DPAK package is suitable for surface-mount assembly, reducing manufacturing costs. Ensure adequate cooling, as solar inverters often operate outdoors in high ambient temperatures.
Recommended
Motor Drives
In motor drives, the STD10N60DM2 can be used in the inverter stage to drive AC motors. Its 600V rating is suitable for 230V AC motor drives. The low gate charge enables high-frequency PWM, reducing motor noise and improving control accuracy. The device's avalanche ruggedness protects against inductive spikes from the motor windings. The DPAK package allows compact designs, but for higher power, consider using TO-220 or D2PAK packages. Proper gate drive and dead-time control are essential to prevent shoot-through.
Recommended
Recommended Products Summary
Engineering reference data for STD10N60DM2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STD10N60M2 | IPD60R360P7 | R6007JNX |
|---|---|---|---|---|
| Package | DPAK (TO-252) | DPAK (TO-252) | DPAK (TO-252) | DPAK (TO-252) |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | ROHM Semiconductor |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 10 A | 10 A | 10 A | 7 A |
| On-Resistance (RDS(on)) | 0.45 Ω | 0.55 Ω | 0.36 Ω | 0.75 Ω |
| Gate Charge (Qg) | 18 nC | 20 nC | 15 nC | 22 nC |
| Input Capacitance (Ciss) | 650 pF | 700 pF | 600 pF | 800 pF |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Key Differentiators
- Lower on-resistance compared to previous MDmesh M2 series (vs STD10N60M2)
- Lower gate charge for faster switching (vs STD10N60M2)
- Cross-brand alternative with lower on-resistance (vs IPD60R360P7)
Design Notes
The STD10N60DM2 has a junction-to-case thermal resistance of 3.3°C/W. For a power dissipation of 10W, the junction temperature rise is 33°C above case temperature. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 150°C. In high-current applications, consider using a larger copper pour and thermal vias to improve heat dissipation.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-100Ω) to control switching speed and reduce EMI. The source pin should have a short, low-inductance path to the ground plane. For high-frequency operation, use a low-ESR ceramic capacitor (e.g., 100nF) near the drain and source pins for local decoupling.
Do not exceed the maximum gate-source voltage of ±25V. Ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the specified on-resistance. Avoid operating the device in the linear region for extended periods, as this can cause excessive power dissipation and thermal runaway. Also, be aware of the body diode's reverse recovery characteristics in bridge topologies; consider using a fast recovery diode in parallel if needed.
Compliance Information
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive applications, consider ST's automotive-grade MOSFETs.
