STMicroelectronics

STL135N8F7AG - 80V N-Channel Power MOSFET | STMicroelectronics

Name: STL135N8F7AG
Brand: STMicroelectronics
Price: 1.82 USD
Availability: InStock

Référence : STL135N8F7AG ✓ Actif

En stock Expédié sous 1 à 3 jours ouvrés

80 V Vdss 135 A Id 4.5 mOhm @ VGS=10V Rds(on) PowerFLAT 5x6 Package

À partir de $1.82 USD / unité

MOQ : 1 |

Prix mis à jour : 2026-08-11

Tarifs dégressifs

Qté	Prix unitaire	Total
1	$2.85	$2,85
10	$2.56	$25,60
100	$2.28	$228,00
500	$2.05	$1 025,00
1 000	$1.82	$1 820,00

ℹ️ Tous les prix sont en USD

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STL135N8F7AG Présentation

The STL135N8F7AG is an N-channel Power MOSFET from STMicroelectronics, part of the STripFET F7 series, designed for high-efficiency power conversion. It features a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 135A, making it suitable for demanding applications such as synchronous rectification, DC-DC converters, and motor control. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs.

A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high frequencies. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of voltage regulators, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management.

Key features of the STL135N8F7AG include a very low on-state resistance (RDS(on)) of 4.5 mOhm typical at VGS=10V, which minimizes conduction losses and improves overall efficiency. The device also offers a wide gate drive voltage range, supporting both 10V and 4.5V logic levels, and features a fast body diode with low reverse recovery charge (Qrr) for improved performance in bridge topologies. The PowerFLAT 5x6 package provides a low thermal resistance (RthJA) of 62.5 C/W, enabling effective heat dissipation in high-current applications.

Technically, the STL135N8F7AG utilizes STMicroelectronics' advanced STripFET F7 technology, which employs a deep-groove structure to reduce on-resistance and gate charge simultaneously. This results in a figure of merit (RDS(on) x Qg) that is among the best in its class, making it ideal for high-frequency switching where both conduction and switching losses are critical. The device also incorporates an optimized gate oxide for enhanced robustness against electrostatic discharge (ESD) and improved dv/dt capability.

Typical applications include synchronous rectification in server and telecom power supplies, DC-DC converters for industrial and automotive systems, and motor control for power tools and electric vehicles. The low RDS(on) and fast switching characteristics make it particularly well-suited for high-current, high-efficiency designs where thermal management is a concern.

When designing with this device, ensure adequate gate drive voltage to fully enhance the channel and minimize RDS(on). Pay attention to PCB layout to minimize parasitic inductance and ensure proper thermal vias for heat dissipation. The device is RoHS compliant and halogen-free, meeting modern environmental standards.

Alternatives de remplacement direct pour STL135N8F7AG — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.

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