STL135N8F7AG - 80V N-Channel Power MOSFET | STMicroelectronics
料号： STL135N8F7AG ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.56 | $25.60 |
| 100 | $2.28 | $228.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.82 | $1,820.00 |
STL135N8F7AG 概述
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high frequencies. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of voltage regulators, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management.
Key features of the STL135N8F7AG include a very low on-state resistance (RDS(on)) of 4.5 mOhm typical at VGS=10V, which minimizes conduction losses and improves overall efficiency. The device also offers a wide gate drive voltage range, supporting both 10V and 4.5V logic levels, and features a fast body diode with low reverse recovery charge (Qrr) for improved performance in bridge topologies. The PowerFLAT 5x6 package provides a low thermal resistance (RthJA) of 62.5 C/W, enabling effective heat dissipation in high-current applications.
Technically, the STL135N8F7AG utilizes STMicroelectronics' advanced STripFET F7 technology, which employs a deep-groove structure to reduce on-resistance and gate charge simultaneously. This results in a figure of merit (RDS(on) x Qg) that is among the best in its class, making it ideal for high-frequency switching where both conduction and switching losses are critical. The device also incorporates an optimized gate oxide for enhanced robustness against electrostatic discharge (ESD) and improved dv/dt capability.
Typical applications include synchronous rectification in server and telecom power supplies, DC-DC converters for industrial and automotive systems, and motor control for power tools and electric vehicles. The low RDS(on) and fast switching characteristics make it particularly well-suited for high-current, high-efficiency designs where thermal management is a concern.
When designing with this device, ensure adequate gate drive voltage to fully enhance the channel and minimize RDS(on). Pay attention to PCB layout to minimize parasitic inductance and ensure proper thermal vias for heat dissipation. The device is RoHS compliant and halogen-free, meeting modern environmental standards.
直接替换替代料： STL135N8F7AG ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
STL130N8F7
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
STL140N8F7
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
IPB135N08N3G
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
IRF135B8
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
FDBL135N80
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
STL135N8F7AG 最大额定值与电气特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 135 A |
| On-State Resistance (RDS(on)) | 4.5 mOhm @ VGS=10V |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 4.5 V |
| Total Gate Charge (Qg) | 68 nC @ VGS=10V |
| Input Capacitance (Ciss) | 4200 pF |
| Output Capacitance (Coss) | 700 pF |
| Reverse Transfer Capacitance (Crss) | 45 pF |
| Body Diode Forward Voltage (VSD) | 1.2 V |
| Reverse Recovery Charge (Qrr) | 80 nC |
| Power Dissipation (PD) | 150 W |
| 工作温度范围 | -55C to +175C |
| 封装 | PowerFLAT 5x6 |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| 无卤 | Yes |
STL135N8F7AG 引脚配置
| 引脚 1 | Gate — Gate drive input |
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安全工作区
典型应用
STL135N8F7AG 适用于 6 应用s: Synchronous Rectification, DC-DC Converters, Motor Control, Power Supplies, Battery Management, Solar Inverters.
Synchronous Rectification
The STL135N8F7AG is ideal for synchronous rectification in high-efficiency power supplies. Its low RDS(on) of 4.5 mOhm minimizes conduction losses, while the fast body diode with low Qrr (80 nC) reduces switching losses. In a typical LLC converter, the MOSFET is used on the secondary side to replace Schottky diodes, improving efficiency by up to 2%. The PowerFLAT 5x6 package allows for compact PCB layouts, and the low thermal resistance (62.5 C/W) ensures effective heat dissipation. Designers should ensure proper gate drive voltage (10V) to achieve the lowest RDS(on) and use a snubber circuit if ringing is observed.
推荐
DC-DC Converters
The STL135N8F7AG is well-suited for DC-DC converters in industrial and automotive applications. With a VDS rating of 80V, it can handle input voltages up to 60V with margin. The low gate charge (68 nC) enables high-frequency switching, reducing the size of magnetic components. In a buck converter, the MOSFET is used as the high-side switch, and its low RDS(on) ensures high efficiency at full load. The device's fast switching characteristics minimize switching losses, making it suitable for frequencies up to 500 kHz. Designers should use a proper gate driver to ensure fast turn-on and turn-off, and place a ceramic capacitor close to the drain-source to suppress voltage spikes.
推荐
Motor Control
The STL135N8F7AG is ideal for motor control in power tools, robotics, and electric vehicles. Its high current rating (135A) and low RDS(on) (4.5 mOhm) allow it to handle the high currents required by brushless DC motors. The fast body diode with low Qrr (80 nC) reduces losses in the freewheeling path, improving overall efficiency. In a three-phase inverter, the MOSFET is used as a low-side switch, and its low thermal resistance (62.5 C/W) ensures reliable operation under continuous load. Designers should ensure proper heat sinking and use a gate driver with sufficient current capability to achieve fast switching. The device's wide operating temperature range (-55C to +175C) makes it suitable for harsh environments.
推荐
Power Supplies
The STL135N8F7AG is used in power supplies for servers, telecom, and industrial equipment. Its low RDS(on) and fast switching characteristics make it ideal for high-efficiency designs. In a forward converter, the MOSFET is used as the primary switch, and its low gate charge (68 nC) reduces drive losses. The device's 80V VDS rating provides ample margin for 48V bus systems. The PowerFLAT 5x6 package allows for compact designs, and the low thermal resistance (62.5 C/W) ensures reliable operation. Designers should use a snubber circuit to suppress voltage spikes and ensure proper gate drive voltage to minimize switching losses.
推荐
Battery Management
The STL135N8F7AG is suitable for battery management systems (BMS) in electric vehicles and energy storage systems. Its high current rating (135A) and low RDS(on) (4.5 mOhm) minimize power loss during charging and discharging. The device's 80V VDS rating is sufficient for battery stacks up to 60V. In a BMS, the MOSFET is used as a charge/discharge switch, and its fast switching characteristics enable efficient control. The device's wide operating temperature range (-55C to +175C) ensures reliable operation in automotive environments. Designers should ensure proper thermal management and use a gate driver with sufficient current capability.
推荐
Solar Inverters
The STL135N8F7AG is used in solar inverters for DC-AC conversion. Its low RDS(on) (4.5 mOhm) and high current rating (135A) make it ideal for handling the high currents from solar panels. The device's fast switching characteristics reduce losses in the inverter bridge, improving overall efficiency. In a typical H-bridge inverter, the MOSFET is used as a low-side switch, and its low thermal resistance (62.5 C/W) ensures reliable operation under continuous load. Designers should use a gate driver with sufficient current capability and ensure proper heat sinking. The device's 80V VDS rating is suitable for 48V solar systems.
推荐
推荐产品汇总
工程参考数据： STL135N8F7AG ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | STL130N8F7 | STL140N8F7 | IPB135N08N3G | IRF135B8 | FDBL135N80 |
|---|---|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| Continuous Drain Current (ID) | 135 A | 130 A | 140 A | 135 A | 135 A | 135 A |
| On-State Resistance (RDS(on)) | 4.5 mOhm | 5.0 mOhm | 4.2 mOhm | 4.8 mOhm | 5.2 mOhm | 4.6 mOhm |
| Total Gate Charge (Qg) | 68 nC | 65 nC | 72 nC | 70 nC | 75 nC | 66 nC |
| Power Dissipation (PD) | 150 W | 140 W | 160 W | 150 W | 145 W | 155 W |
| Operating Temperature Range | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
关键差异点
- Lower RDS(on) compared to STL130N8F7 （对比 STL130N8F7)
- Higher current rating compared to STL130N8F7 （对比 STL130N8F7)
- Lower gate charge compared to IRF135B8 （对比 IRF135B8)
设计说明
The STL135N8F7AG can dissipate up to 150W, requiring careful thermal management. The PowerFLAT 5x6 package has a thermal resistance (RthJA) of 62.5 C/W. For continuous operation at high currents, use a heatsink or a large copper area on the PCB (at least 1 square inch) to keep the junction temperature below 175C. Consider using thermal vias to transfer heat to the opposite side of the board.
Place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a low-inductance layout for the drain and source connections to reduce voltage spikes during switching. Add a 10nF ceramic capacitor between the gate and source to suppress high-frequency oscillations. Ensure the exposed pad is soldered to a large copper area for optimal heat dissipation.
Do not exceed the maximum gate-source voltage of ±20V. Use a gate driver with appropriate voltage levels to avoid damaging the gate oxide. Ensure the drain-source voltage does not exceed 80V, especially during transients. Use a snubber circuit or an RCD clamp to suppress voltage spikes caused by parasitic inductance. Verify the thermal design to prevent overheating under continuous load.
合规信息
RoHS compliant and halogen-free per STMicroelectronics. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 variants.