STL80N4LLF3 - 40V 80A 4.2mOhm N-Ch PowerFLAT MOSFET | ST
Référence : STL80N4LLF3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.31 | $131,00 |
| 500 | $1.08 | $540,00 |
| 1 000 | $0.92 | $920,00 |
| 3 000 | $0.79 | $2 370,00 |
STL80N4LLF3 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or modulate current in power-conversion circuits. STripFET is STMicroelectronics' proprietary trench-gate technology that minimizes RDS(on) and gate charge for low conduction and switching losses. This part sits in the hierarchy: N-channel MOSFET -> power MOSFET -> discrete semiconductor, and is most commonly deployed as a synchronous rectifier in buck/boost converters where it replaces the lossy Schottky diode to improve overall efficiency.
Key features include 4.2 mOhm maximum RDS(on) at VGS=10 V, low gate charge optimized for high-frequency switching (typical 300 kHz to 1 MHz), a logic-level-compatible VGS(th) range, 100% Rg2-T tested avalanche rating, and compliance with RoHS directives. The package outline of 5x6 mm with an exposed drain pad provides a low thermal-resistance path (Rthj-c typically ~1 C/W per published ST datasheets), allowing the device to sustain high pulsed currents in motor-drive and hot-swap scenarios.
The STL80N4LLF3 leverages STripFET III trench technology, which reduces both on-state conduction loss and switching loss compared to planar MOSFETs of the same die area. The combination of low Qgd and low Qrr supports high-side and low-side synchronous-rectifier use in buck converters supplying multi-rail CPU/GPU core voltages, where efficiency at light load and thermal density are both critical.
Typical applications include synchronous rectification in server/server blade-side DC-DC VRMs, notebook and tablet buck converters, telecom 48 V intermediate bus converters, motor-drive H-bridges, and hot-swap / OR-ing circuits in industrial power systems. Its 40 V rating provides comfortable margin for 12 V and 19 V bus rails while keeping RDS(on) low.
When designing with this part, evaluate gate-drive voltage carefully: at VGS=4.5 V the on-resistance roughly doubles versus VGS=10 V, so for logic-level PWM controllers ensure the driver can pull the gate to at least 8 V to realize the published low RDS(on). Also respect the SOA curve under pulsed loads and provide adequate copper on the drain pad to keep Rthj-a within budget.
This page synthesizes distributor stock indicators, pin-compatible drop-in alternatives, and practical layout/thermal design notes not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour STL80N4LLF3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec STL80N4LLF3 (même facteur de forme et même empreinte) — différant par Continuous Drain Current (ID) at Tc, Operating Temperature Range, Package, Power Dissipation (PD) at Tc, Technology.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STL70N4LLF5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STL80N4LLF3A
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STL65N4LLF5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
STL90N4LLF3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
BSC0901NSATMA1
✅ Remplacement direct✓ En stock
$0.78 / unité
Voir la fiche technique →STL80N4LLF3 Valeurs maximales et caractéristiques électriques
| FET Type | N-Channel |
| Technology | STripFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc | 80 A |
| On-Resistance RDS(on) max at VGS=10 V | 4.2 mOhm (typ from manufacturer line; see notes) |
| Power Dissipation (PD) at Tc | 80 W |
| Plage de température de fonctionnement | -55C to +175C (typical ST PowerFLAT MOSFET range) |
| Boîtier | PowerFLAT (5x6) - 8-Pin VDFN exposed pad |
| Type de montage | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant |
| Avalanche Rated | Yes (100% Rg2-T tested per ST datasheet) |
Configuration des broches de STL80N4LLF3
| Broche 1 | G — Gate |
| Broche 2 | S — Source (also tied to exposed pad) |
| Broche 3 | S — Source (also tied to exposed pad) |
| Broche 4 | S — Source (also tied to exposed pad) |
| Broche 5 | S — Source (also tied to exposed pad) |
| Broche 6 | S — Source (also tied to exposed pad) |
| Broche 7 | S — Source (also tied to exposed pad) |
| Broche 8 | S — Source (also tied to exposed pad) |
| Broche PAD | D — Drain (large exposed tab on bottom of package) |
Zone de fonctionnement sûr (DC) - illustrative from datasheet family
Applications typiques
STL80N4LLF3 convient pour 6 applications: 12V Synchronous Buck Converter, Notebook and Tablet Voltage Regulators, Server and Telecom Intermediate-Bus Converter, Motor Drive H-Bridge (12V/24V BLDC, Brushed DC), Hot-Swap and OR-ing Controllers, Battery Management and Protection.
12V Synchronous Buck Converter
The STL80N4LLF3 is purpose-designed for the low-side synchronous-rectifier position in 12 V-input buck converters powering CPUs, GPUs, ASICs, and DDR memory rails. Its 4.2 mOhm RDS(on) at VGS=10 V minimizes conduction loss in continuous-conduction mode, where the synchronous FET carries the full load current during the off-time of the high-side switch. The 40 V VDS rating provides comfortable margin against 12 V bus transients (per 12V rail spec, transients are bounded below 20 V). Compared to using a Schottky diode, the synchronous-rectifier configuration with the STL80N4LLF3 typically improves efficiency by 3-5% at 20 A load. Power dissipation in the synchronous FET equals I^2 x RDS(on), so thermal design must size the copper area on the PowerFLAT drain pad to keep junction temperature below 100 C at worst-case load.
Recommandé
Notebook and Tablet Voltage Regulators
The STL80N4LLF3's PowerFLAT 5x6 footprint and 4.2 mOhm on-resistance make it a strong fit for space-constrained VRM stages inside notebooks, ultrabooks, and tablets. In a typical 19 V to 1 V core-voltage buck, the synchronous-rectifier FET carries up to 20-30 A continuous and must dissipate 2-3 W from conduction loss alone. The STL80N4LLF3's exposed-pad package yields a junction-to-ambient thermal resistance near 40-50 C/W on a 1-square-inch copper pour, keeping Tj well below 100 C at sustained load. The 40 V VDS provides margin against 19 V-input transients, and STripFET III trench technology reduces Qgd for fast switching at 300-500 kHz, supporting small inductor and capacitor selection.
Recommandé
Server and Telecom Intermediate-Bus Converter
In 48 V-to-intermediate-bus or 12 V-distributed-architecture server power designs, the STL80N4LLF3 can serve as the primary-side FET or synchronous-rectifier FET in half-bridge and full-bridge topologies. The 40 V VDS rating fits within 12 V-input intermediate bus architectures (IBA), while the 80 A continuous drain current supports multi-rail server power supplies up to 1-2 kW. STripFET III's low Qgd and Qrr reduce switching loss at 100-200 kHz operating frequencies, improving full-load efficiency above 96%. The PowerFLAT 5x6 package simplifies multi-FET paralleling for higher-current rails because the footprint matches industry-standard 5x6 PQFN pads.
Recommandé
Motor Drive H-Bridge (12V/24V BLDC, Brushed DC)
The STL80N4LLF3 fits the four-switch H-bridge position in 12 V to 24 V brushed-DC and small-BLDC motor drives, such as those found in power tools, e-bike controllers, and small industrial drives. With 80 A continuous drain current and 100% avalanche testing, the device absorbs the back-EMF energy of motor commutation without external snubbers in most applications. The low 4.2 mOhm RDS(on) keeps conduction loss in the FETs modest even at 30-50 A peak phase currents, supporting efficient PWM-driven speed control. Designers should observe the SOA curve during hard switching at start-up and during fast direction reversals, where simultaneous high VDS and high ID events can occur.
Recommandé
Hot-Swap and OR-ing Controllers
In -48 V telecom or 12 V/24 V server hot-swap and OR-ing applications, the STL80N4LLF3 can act as the main pass-FET or OR-ing FET. Its low RDS(on) reduces steady-state dissipation: at 30 A continuous load, the FET dissipates roughly 3.8 W (I^2 x RDS(on)), manageable on a properly sized PowerFLAT drain pad. The 40 V VDS rating suits 24 V systems with appropriate transient suppression. During hot-plug events, the avalanche rating and 100% Rg2-T tested ruggedness help the FET absorb the inrush-energy spike from charging the bulk output capacitors. A dedicated hot-swap controller IC should be paired with the FET to manage inrush timing and fault response.
Recommandé
Battery Management and Protection
The STL80N4LLF3 can serve as the high-side disconnect FET in 4S to 8S lithium-ion battery packs (nominally up to 36 V pack voltage, within the 40 V VDS rating). Its 4.2 mOhm RDS(on) reduces loss during high-discharge pulses, and the 80 A continuous rating supports high-power e-bike, power-tool, and small-EV applications. The avalanche rating provides additional safety margin if a pack experiences a brief short-circuit event while the protection circuit opens the FET. Designers should add a gate-source resistor and Zener clamp for guaranteed off-state during storage, and use a dedicated battery-protection IC for cell balancing and over-current cutoff logic.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STL80N4LLF3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STL70N4LLF5 | STL80N4LLF3A | STL65N4LLF5 | STL90N4LLF3 | BSC0901NS |
|---|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon |
| Package | PowerFLAT (5x6) | PowerFLAT (5x6) - same | PowerFLAT (5x6) - same | PowerFLAT (5x6) - same | PowerFLAT (5x6) - same | PQFN 5x6 (OptiMOS) - same footprint outline |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 30 V |
| Continuous Drain Current (ID) | 80 A | 70 A | 80 A | 65 A | 90 A | 100 A (typ, 30 V part) |
| On-Resistance RDS(on) typ at VGS=10V | 4.2 mOhm | 4.5 mOhm | 4.2 mOhm | 5.0 mOhm | 3.8 mOhm | 0.95 mOhm (different family, 30 V) |
| Technology / Generation | STripFET III | STripFET V (newer gen) | STripFET III (current rolling) | STripFET V | STripFET III | Infineon OptiMOS |
| Avalanche Rated (100% Rg2-T tested) | Yes | Yes | Yes | Yes | Yes | Yes (Infineon OptiMOS) |
Principaux différenciateurs
- Lowest on-resistance in PowerFLAT 5x6 STripFET III family (vs STL70N4LLF5)
- High continuous drain current in compact footprint (vs STL65N4LLF5)
- Cross-brand 30V alternative with similar footprint (vs BSC0901NS)
Notes de conception
Estimated: at ID=30 A continuous and RDS(on)=4.2 mOhm, conduction loss is approximately 3.8 W. On the PowerFLAT 5x6 with a 1-square-inch 2-oz copper pour on the drain pad, theta_JA typically lands near 40-50 C/W, yielding a 150-190 C junction temperature rise above ambient - clearly beyond Tj(max)=175 C without forced airflow. For sustained 30 A operation, either increase copper area to 2+ square inches, parallel two devices, or add forced airflow to keep Tj below 125 C for derated reliability.
The PowerFLAT 5x6 drain pad is the primary thermal path and must be soldered to a large copper pour on the PCB. Recommended layout: at least 1 square inch of 2-oz copper on the top layer connected directly to the exposed pad, plus thermal vias (0.3 mm drill, 1 mm pitch) to inner-plane copper for spreading heat to backside. Keep the source pins (2-8) connected to a wide low-impedance source copper pour that returns directly to the controller's low-side gate-driver ground Kelvin connection to avoid source-inductance-induced gate-drive ringing.
Minimize the gate-drive loop area by placing the gate-driver IC as close as possible to the gate pin (pin 1), and use a wide, short gate trace (preferably on the top layer) with a 10-ohm series gate resistor to damp parasitic-oscillation. Add a 10 kohm VCM pulldown resistor on the gate to ensure the FET stays off during controller start-up. Keep the high-current source-loop area (drain of high-side FET through inductor to source of low-side FET) compact to minimize switching-node ringing and EMI.
Do not drive the STL80N4LLF3 gate directly from a 3.3 V microcontroller GPIO; at VGS=3.3 V the device is barely enhanced and RDS(on) is several times higher than the published 4.2 mOhm at VGS=10 V, causing severe conduction loss and thermal runaway. Always use a dedicated gate-driver IC that pulls the gate to 8-10 V for the low-side FET. Also avoid exceeding the absolute maximum VGS rating (typically +/-20 V for STripFET parts); a gate-source Zener clamp (15 V) is recommended for high-side bootstrap-drive circuits to prevent VGS overstress during transient events.
Informations de conformité
RoHS and lead-free compliance per STMicroelectronics product page. AEC-Q100 not explicitly stated in the public product listing, so marked not_applicable for power-MOSFET automotive qualification (consult ST automotive-grade product line for AEC-Q100 qualified alternatives).
