STP6N60M2 - 600V 5A N-Channel Power MOSFET | STMicroelectronics
Référence : STP6N60M2 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.8182 | $0,82 |
| 10 | $0.5909 | $5,91 |
| 100 | $0.5227 | $52,27 |
| 500 | $0.5 | $250,00 |
| 1 000 | $0.4773 | $477,30 |
STP6N60M2 Présentation
A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power in electronic circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering high input impedance and fast switching speeds. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in power supplies, motor drives, and lighting systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each suited to specific power handling and switching requirements.
Key features of the STP6N60M2 include a low gate charge (Qg) of 15nC (typical), which reduces switching losses and enables high-frequency operation. The device also offers a wide safe operating area (SOA) and is avalanche-rated, ensuring robustness in harsh environments. Its low on-resistance minimizes conduction losses, improving overall system efficiency. The TO-220 package allows for easy heatsinking, making it suitable for applications requiring moderate power dissipation.
Technically, the STP6N60M2 utilizes ST's MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and reduced parasitic capacitance. This results in improved figure of merit (FOM) compared to conventional planar MOSFETs. The device has a maximum junction temperature of 150°C and is available in a lead-free, RoHS-compliant version, meeting modern environmental standards.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In these applications, the STP6N60M2's high breakdown voltage and low on-resistance enable efficient power conversion, while its fast switching characteristics reduce electromagnetic interference (EMI).
When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. Also, consider the thermal resistance of the TO-220 package (62.5°C/W junction-to-ambient) and use appropriate heatsinking for continuous operation at high currents. Gate resistors may be needed to control switching speed and reduce ringing.
Alternatives de remplacement direct pour STP6N60M2 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STP6N60M2-1
📋 Alternative de référence (hors catalogue)
STP6N60M2-2
📋 Alternative de référence (hors catalogue)
STP6N60M2-3
📋 Alternative de référence (hors catalogue)
IPP60R099CP
📋 Alternative de référence (hors catalogue)
FDPF5N60UT
📋 Alternative de référence (hors catalogue)
STP6N60M2 Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 5 A |
| Continuous Drain Current (ID) at 100°C | 3.2 A |
| Pulsed Drain Current (IDM) | 15 A |
| On-Resistance (RDS(on)) | 1.2 Ω (typical), 1.5 Ω (max) |
| Gate-Source Voltage (VGS) | ±30 V |
| Gate Charge (Qg) | 15 nC (typical) |
| Input Capacitance (Ciss) | 420 pF (typical) |
| Output Capacitance (Coss) | 45 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 3.5 pF (typical) |
| Power Dissipation (PD) | 110 W (at 25°C) |
| Plage de température de fonctionnement | -55°C to +150°C |
| Boîtier | TO-220 |
| Type de montage | Through Hole |
| Statut RoHS | Compliant |
Configuration des broches de STP6N60M2
| Broche 1 | Gate — Gate terminal for controlling the MOSFET |
| Broche 2 | Drain — Drain terminal, connected to the load |
| Broche 3 | Source — Source terminal, connected to ground |
Zone de fonctionnement sûr
Applications typiques
STP6N60M2 convient pour 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, DC-DC Converters, Motor Drives, Solar Inverters.
Switch-Mode Power Supplies (SMPS)
The STP6N60M2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance, enabling efficient power conversion. In a typical flyback or forward converter, the MOSFET switches at high frequency, and its low gate charge reduces switching losses. The TO-220 package allows for effective heatsinking, ensuring reliable operation at high power levels. Compared to IGBTs, the MOSFET offers faster switching and lower conduction losses at moderate currents, making it suitable for power supplies up to 150W.
Recommandé
Power Factor Correction (PFC)
In PFC circuits, the STP6N60M2 operates in continuous conduction mode (CCM) to shape the input current waveform. Its low on-resistance minimizes conduction losses, while the fast switching speed reduces EMI. The device's avalanche rating ensures robustness during transient conditions. With a 600V rating, it can handle the boosted voltage in boost-type PFC stages. The TO-220 package is suitable for heatsink mounting, which is essential for dissipating heat in high-power PFC designs.
Recommandé
LED Lighting Drivers
The STP6N60M2 is well-suited for LED drivers, particularly in offline applications where high voltage is present. Its low on-resistance and fast switching enable efficient current regulation, reducing power loss and heat generation. The device can be used in buck or flyback topologies to drive LED strings. The TO-220 package allows for easy thermal management, ensuring long LED lifespan. Additionally, the MOSFET's high input impedance simplifies gate drive circuitry.
Recommandé
DC-DC Converters
In DC-DC converters, the STP6N60M2 is used as a switching element in boost, buck, or flyback topologies. Its 600V rating allows it to handle high input voltages, while the low gate charge enables high-frequency operation, reducing the size of magnetic components. The device's low on-resistance improves efficiency, especially in continuous conduction mode. The TO-220 package is suitable for moderate power levels, and proper heatsinking is recommended for high-current applications.
Recommandé
Motor Drives
The STP6N60M2 can be used in motor drive circuits for controlling the speed and direction of AC or DC motors. Its high voltage rating and fast switching make it suitable for inverter stages in variable frequency drives (VFDs). The low on-resistance reduces power dissipation, while the avalanche rating ensures robustness during motor transients. The TO-220 package allows for heatsink mounting, which is essential for dissipating heat in continuous operation. The device can be used in half-bridge or full-bridge configurations.
Recommandé
Solar Inverters
In solar inverters, the STP6N60M2 is used in the DC-AC conversion stage. Its high breakdown voltage (600V) is suitable for the DC bus voltage in photovoltaic systems. The low on-resistance and fast switching reduce losses, improving overall system efficiency. The device's robustness and wide operating temperature range make it suitable for outdoor installations. The TO-220 package allows for effective heatsinking, which is critical in high-power inverters.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STP6N60M2 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STP6N60M2-1 | IPP60R099CP | FDPF5N60UT |
|---|---|---|---|---|
| Package | TO-220 | TO-220FP | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 5 A | 5 A | 11 A | 5 A |
| On-Resistance (RDS(on)) | 1.2 Ω (typ) | 1.2 Ω (typ) | 0.099 Ω (typ) | 1.5 Ω (typ) |
| Gate Charge (Qg) | 15 nC (typ) | 15 nC (typ) | 38 nC (typ) | 20 nC (typ) |
| Power Dissipation (PD) | 110 W | 30 W | 208 W | 50 W |
| Avalanche Energy (EAS) | 150 mJ | 150 mJ | 200 mJ | 100 mJ |
Principaux différenciateurs
- Low on-resistance (1.2Ω) for reduced conduction losses (vs FDPF5N60UT)
- Low gate charge (15nC) for fast switching (vs IPP60R099CP)
- Higher power dissipation (110W) than TO-220FP variants (vs STP6N60M2-1)
Notes de conception
The STP6N60M2 has a junction-to-case thermal resistance of 1.14°C/W and a maximum power dissipation of 110W at 25°C case temperature. For continuous operation at high currents, use a heatsink with adequate thermal resistance. For example, at 5A and 10V drop, power dissipation is 50W, requiring a heatsink with thermal resistance below 2°C/W to keep junction temperature below 150°C.
For TO-220 packages, ensure the mounting tab is properly soldered to a large copper area for heat spreading. Use a thermal pad or heatsink compound to improve thermal contact. Keep the gate drive traces short and use a gate resistor (typically 10-100Ω) to reduce ringing and EMI.
Do not exceed the maximum gate-source voltage of ±30V. Use a zener diode or TVS for gate protection if the gate drive can spike. Also, ensure the drain-source voltage does not exceed 600V, especially during transients. Consider snubber circuits to limit voltage spikes during switching.
Informations de conformité
RoHS compliant per STMicroelectronics datasheet. Not AEC-Q100 qualified.
