RTAX2000SL-1CQ352PROTO vs RTAX1000SL-CQ352V השוואה
השוואה מפורטת זה לצד זה של RTAX2000SL-1CQ352PROTO מאת Microchip Technology ו RTAX1000SL-CQ352V מאת Microchip Technology. השווה מפרטים עיקריים, פרמטרים חשמליים, אריזה, סטטוס מחזור חיים, תמחור וזמינות כדי לקבוע את הרכיב הטוב ביותר לדרישות העיצוב שלך.
Microchip Technology
RTAX2000SL-1CQ352PROTO - 2M-Gate Rad-Tolerant FPGA | Actel
RTAX2000SL-1CQ352PROTO ✓ פעילMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ פעילהשוואת מפרטים
| פרמטר | RTAX2000SL-1CQ352PROTO | RTAX1000SL-CQ352V |
|---|---|---|
| מותג | Microchip Technology | Microchip Technology |
| קטגוריה | FPGA & CPLD | FPGA & CPLD |
| סטטוס מחזור חיים | פעיל | פעיל |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | 2,000,000 | 1,000,000 |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| Logic Cells | 32,256 | 18,144 |
| ASIC Gate Equivalent | 250,000 | — |
| Process Technology | CMOS, antifuse interconnect | 0.15 um CMOS |
| מארז | CQFP-352 (ceramic quad flat pack) | 352-pin Ceramic CQFP (CQ352V) |
| Terminal Pitch | 0.500 mm | — |
| Programmability | One-Time Programmable (antifuse, OTP) | — |
| Configuration | Live at power-up, single-chip | — |
| Embedded Memory | Embedded SRAM with FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | Radiation-tolerant, space-flight qualified family |
| Variant Designation | PROTO (prototyping device) | — |
| טמפרטורת פעולה | [DATA_NEEDED: operating temperature range for PROTO variant] | [DATA_NEEDED: operating temperature range] |
| Core Voltage | [DATA_NEEDED: core supply voltage] | 1.5 V |
| I/O Voltage | [DATA_NEEDED: I/O supply voltage] | [DATA_NEEDED: I/O bank voltage range] |
| סוג הרכבה | Surface Mount | Surface Mount |
| סטטוס RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Programming Technology | — | Antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| רמת MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |