EP3SE50F780I4L - Stratix III E FPGA, 47.5K LE, 780-FBGA | Intel
MPN: EP3SE50F780I4L ⚠ רכישה אחרונהEP3SE50F780I4L סקירה
An FPGA (Field Programmable Gate Array) is a reconfigurable semiconductor whose logic fabric, embedded multipliers, block RAM, and high-speed transceivers can be programmed post-manufacture. FPGAs sit between general-purpose microcontrollers and fixed-function ASICs in the design hierarchy: microcontrollers execute software sequentially, FPGAs implement custom parallel hardware, and ASICs deliver equivalent hardware after a non-recurring engineering (NRE) cost. The Stratix III Enhanced family uses Altera's adaptive logic module (ALM) architecture with 8-input fracturable look-up tables (LUTs), enabling efficient mapping of wide and narrow datapaths.
Key features of the EP3SE50F780I4L include 47,500 LEs organized into 1,900 logic array blocks (LABs), up to 5,760 Kbits of M9K block RAM, dedicated DSP blocks for fixed- and floating-point arithmetic, and support for high-speed external memory interfaces (DDR/DDR2/DDR3/QDRII+) via soft memory controllers. The 488 user I/Os are arranged in 16 banks supporting a wide range of single-ended and differential I/O standards including LVDS, LVTTL, LVCMOS, HSTL, and SSTL.
Architecturally, the Stratix III E family integrates dedicated transceivers up to 1.25 Gbps (model-dependent), high-performance PLLs, and a programmable power network that powers down unused regions to reduce static consumption. Partial reconfiguration lets designers swap logic blocks without interrupting adjacent logic, useful for dynamically reconfigurable wireless and test systems.
Typical applications include telecom baseband processing, high-throughput DSP pipelines (radar, video broadcast), ASIC prototyping, military/aerospace signal processing, and high-speed serial protocol bridging. The 'I' speed grade and industrial temperature range (-40C to +100C core) suit ruggedized environments.
When designing with the EP3SE50F780I4L, note that the device is in legacy lifecycle. Plan firmware, bitstream, and toolchain (Quartus II) compatibility carefully, and verify second-source availability before long-life deployments.
This page synthesizes distributor pricing, drop-in same-package alternatives, comparison parameters, and practical FPGA design notes not found in the manufacturer datasheet alone.
חלופות תחליף ישיר עבור EP3SE50F780I4L — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם EP3SE50F780I4L (אותו גורם צורה וטביעת רגל) — שונים ב Package, Family, Logic Elements, Embedded Memory, Mounting Type.
EP3SE50F780I4
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←EP3SE50F780I4N
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←EP3SE50F780I4G
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←EP3SE110F780I4L
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←EP3SE110F780I4N
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←EP3SE50F780I4L דירוגים מרביים ומאפיינים חשמליים
| Family | Stratix III Enhanced (E) |
| Logic Elements (LEs) | 47,500 |
| Logic Array Blocks (LABs) | 1,900 |
| User I/Os | 488 |
| Total Embedded Memory | 5,760 Kbits |
| מספר פינים | 780 |
| מארז | 780-BBGA, FCBGA |
| Process Technology | 65 nm |
| Core Voltage | 0.9 V (1.05 V to 1.15 V option) |
| Operating Frequency (max) | 375 MHz |
| Speed Grade | I4 |
| טמפרטורת פעולה | -40C to +100C (Industrial) |
| סוג הרכבה | Surface Mount (BGA) |
| רמת MSL | 3 (168 hours) |
| סטטוס RoHS | Compliant |
תצורת פינים של EP3SE50F780I4L
| פין A1 | I/O Bank 8 — User I/O (Bank 8) - LVDS/LVCMOS/HSTL/SSTL capable |
| פין A2 | VCCIO8 — I/O supply for Bank 8 |
| פין B1 | I/O — User I/O (Bank 8) |
| פין B2 | GND — Ground |
| פין C1 | I/O — User I/O (Bank 8) |
| פין C2 | PLL_CLK1 — Dedicated PLL clock input 1 |
| פין D1 | I/O Bank 7 — User I/O (Bank 7) |
| פין D2 | VCCINT — Core voltage supply 0.9 V |
| פין E1 | I/O — User I/O (Bank 7) |
| פין E2 | MSEL0 — Configuration mode select bit 0 |
| פין F1 | I/O — User I/O (Bank 7) |
| פין F2 | MSEL1 — Configuration mode select bit 1 |
| פין G1 | I/O Bank 6 — User I/O (Bank 6) |
| פין G2 | MSEL2 — Configuration mode select bit 2 |
| פין H1 | I/O — User I/O (Bank 6) |
| פין H2 | nCONFIG — Configuration control (active low) |
| פין J1 | I/O — User I/O (Bank 6) |
| פין J2 | nSTATUS — Configuration status (active low) |
| פין K1 | I/O Bank 5 — User I/O (Bank 5) |
| פין K2 | CONF_DONE — Configuration done indicator |
| פין L1 | I/O — User I/O (Bank 5) |
| פין L2 | TCK — JTAG test clock input |
| פין M1 | I/O — User I/O (Bank 5) |
| פין M2 | TMS — JTAG test mode select |
| פין N1 | I/O Bank 4 — User I/O (Bank 4) |
| פין N2 | TDI — JTAG test data input |
| פין P1 | I/O — User I/O (Bank 4) |
| פין P2 | TDO — JTAG test data output |
| פין R1 | I/O — User I/O (Bank 4) |
| פין R2 | CLK0 — Dedicated global clock input 0 |
יישומים טיפוסיים
EP3SE50F780I4L מתאים עבור 6 יישוםs: Telecom Baseband Processing, High-Throughput DSP Pipelines, ASIC Prototyping, Industrial Test and Measurement, Military and Aerospace Signal Processing, High-Speed Protocol Bridging.
Telecom Baseband Processing
The EP3SE50F780I4L's 47,500 LEs and dedicated DSP blocks deliver the parallel datapath throughput required for telecom baseband processing. With up to 5,760 Kbits of embedded M9K block RAM, designers can implement multi-channel filter chains, FFT engines, and channelization logic without external memory penalties. The 488 user I/Os support parallel LVDS lanes to ADC/DAC front ends, while the I4 industrial speed grade ensures timing closure over -40C to +100C. Designers typically pair this FPGA with DDR2/QDRII+ external memory via soft controller cores; compared to fixed-function DSPs, the Stratix III E enables protocol-agnostic reconfiguration across LTE, WCDMA, and proprietary waveforms on a single bitstream family.
מומלץ
High-Throughput DSP Pipelines
For radar, video broadcast, and high-performance signal processing, the EP3SE50F780I4L delivers substantial DSP block counts combined with high block RAM bandwidth. The 65nm process and 0.9 V core voltage yield static power figures lower than prior Stratix generations, while partial reconfiguration lets designers swap DSP kernels in real time. In a typical radar application, the FPGA might implement pulse compression, moving target indication (MTI), and CFAR detection in parallel with external DDR3 buffer interfaces. The 488 user I/O count accommodates multi-channel LVDS data capture from front-end ADCs, and the industrial temperature range supports defense and aerospace deployments.
מומלץ
ASIC Prototyping
ASIC prototyping is one of the strongest use cases for the EP3SE50F780I4L, because Stratix III E silicon maps efficiently from ASIC gate-level netlists through Quartus II synthesis. The 47.5K LEs combined with embedded memory and DSP blocks can host multi-million-gate ASIC designs partitioned across multiple FPGAs. Designers benefit from the 780-ball FC-BGA footprint with abundant user I/Os, which simplifies multi-FPCB interconnect via board-to-board high-speed connectors. The industrial temperature range suits bring-up labs and validation racks. For larger prototypes, designers can daisy-chain EP3SE110 or EP3SE260 variants for higher logic capacity.
מומלץ
Industrial Test and Measurement
In automated test equipment (ATE), protocol analyzers, and oscilloscope front-ends, the EP3SE50F780I4L provides the programmable logic fabric needed for custom timing engines, pattern generators, and DSP-based measurement algorithms. The 488 user I/Os are organized into 16 banks supporting LVDS, LVCMOS, and HSTL standards, enabling direct interface to high-speed ADCs and DACs without external translators. Designers can leverage the dedicated PLL blocks for jitter-cleaned clock trees and the partial reconfiguration feature to switch test personalities on the fly.
מומלץ
Military and Aerospace Signal Processing
The EP3SE50F780I4L's industrial operating temperature range (-40C to +100C core) and robust FC-FBGA package suit ruggedized defense signal processing platforms including electronic warfare (EW) subsystems, secure communications modems, and SIGINT receivers. Its high logic density enables real-time decryption, channelization, and demodulation, while the Stratix III architecture supports TEMPEST and tamper-resistance design flows. Designers can implement multiple secure enclaves via partial reconfiguration, and the abundant I/Os interface directly to RF data converters and high-speed transceivers.
מומלץ
High-Speed Protocol Bridging
The EP3SE50F780I4L is well-suited for protocol bridging applications such as PCIe-to-Ethernet, Serial RapidIO-to-DDR, or custom serializer/deserializer (SerDes) bridging. The Stratix III Enhanced family integrates dedicated transceivers (model-dependent) operating up to 1.25 Gbps, and the 488 user I/Os provide ample parallel interface bandwidth. Designers can implement custom protocol stacks including CPRI, OBSAI, or proprietary FPGA-to-FPGA links. The partial reconfiguration feature is particularly valuable in bridging applications where multiple protocol personalities must coexist on a single card.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור EP3SE50F780I4L — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | EP3SE50F780I4 | EP3SE50F780I4N | EP3SE50F780I4G | EP3SE110F780I4L |
|---|---|---|---|---|---|
| Brand | Intel | Intel | Intel | Intel | Intel |
| Package | 780-BBGA, FCBGA | 780-BBGA, FCBGA | 780-BBGA, FCBGA | 780-BBGA, FCBGA | 780-BBGA, FCBGA |
| Logic Elements (LE) | 47,500 | 47,500 | 47,500 | 47,500 | 106,500 |
| User I/Os | 488 | 488 | 488 | 488 | 488 |
| Speed Grade | I4 | I4 | I4 | I4 | I4 |
| Temperature Range | Industrial -40C to +100C | Commercial 0C to +85C | Industrial -40C to +100C | Industrial -40C to +100C | Industrial -40C to +100C |
| Terminal Finish | SnPb (L suffix) | Matte Sn (no suffix) | Lead-free NiPdAu (N suffix) | Lead-free (G suffix) | SnPb (L suffix) |
| Embedded Memory | 5,760 Kbits | 5,760 Kbits | 5,760 Kbits | 5,760 Kbits | 8,640 Kbits |
| Process / Core Voltage | 65 nm / 0.9 V | 65 nm / 0.9 V | 65 nm / 0.9 V | 65 nm / 0.9 V | 65 nm / 0.9 V |
מבדילים עיקריים
- Lead-free terminal finish variant available with identical silicon (לעומתEP3SE50F780I4L (SnPb L suffix))
- Logic density headroom without PCB rework (לעומתEP3SE50F780I4L (47,500 LE))
- Industrial temperature range suitable for ruggedized systems (לעומתEP3SE50F780I4 (commercial 0C to +85C))
הערות תכנון
Estimated: At maximum utilization of 47,500 LEs at 375 MHz with all I/O switching, total power dissipation can reach 8-12 W. Designers must supply a low-noise 0.9 V core rail capable of at least 13 A, plus multiple VCCIO rails (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V) for the 16 I/O banks. Place decoupling capacitors within 5 mm of every VCCIO/VCCINT pin pair; use at least 1 x 220 uF bulk + 10 x 10 uF + 20 x 0.1 uF ceramic per power plane. The Quartus II PowerPlay analyzer should be run early to optimize the design for thermal headroom.
The 780-BGA package requires a multi-layer PCB with a thermal via array beneath the central ground pad. With 8-12 W typical dissipation and theta_JA around 8-12 C/W for FC-FBGA on a 1 oz 8-layer board, junction-to-ambient temperature rise may approach 80-100 C. Add a heat spreader or heatsink for industrial temperature deployments (junction max 100 C core). Industrial grade parts (I4 suffix) must be derated to keep Tj <= 100 C; commercial parts (no I suffix or I4 commercial) should keep Tj <= 85 C.
The 780-FBGA requires a 0.8 mm or 1.0 mm ball pitch with microvia stack-up (laser-drilled vias from outer layer to inner power planes). Use 1 oz copper on outer layers with 0.5 oz on inner, and avoid routing signals across power-plane splits to prevent return-path discontinuities. Matched-length differential pairs (LVDS) should target within 5 mil tolerance. Place the JTAG chain (TCK/TMS/TDI/TDO) on a dedicated connector near the FPGA for programming access. Reference the Stratix III Handbook pin connection guidelines for unused-pin termination.
Use IBIS simulation for high-speed LVDS and HSTL interfaces before layout freeze. The Stratix III E supports LVDS up to 1 Gbps; place external 100 ohm differential termination within 1 cm of receiver pins. For DDR2/DDR3 interfaces, follow the Altera External Memory Interface Handbook for read/write leveling, Fly-by topology, and write deskew. Always enable on-chip termination (OCT) where possible to minimize external components. Series-dampening resistors may be needed on long traces (>5 cm) to control overshoot.
Common pitfalls include: (1) leaving unused LVDS pairs floating instead of disabling them in Quartus II; (2) violating the I/O bank VCCIO requirement when mixing voltage standards; (3) failing to assert nCONFIG during power-up ramp, which prevents proper configuration; (4) overlooking the MSEL[2:0] pin settings, which select AS/PS/JTAG configuration modes; (5) using older Quartus II versions that lack device support for the latest silicon revisions. Always validate the design with the Quartus II design rule checker (DRC) and timequest timing analyzer before generating the bitstream.
מידע על תאימות
The 'L' suffix denotes SnPb (lead-bearing) terminal finish per Altera/Intel nomenclature, making the base EP3SE50F780I4L non-RoHS. For RoHS compliance, choose EP3SE50F780I4N or EP3SE50F780I4G variants which share identical silicon but use lead-free finishes. AEC-Q100 not applicable for FPGAs; industrial temperature grade is denoted by the 'I' speed grade.