BSC011N03LSIATMA1 vs IRLR8726TRLPBF तुलना
विस्तृत दोनों ओर की तुलना BSC011N03LSIATMA1 द्वारा Infineon और IRLR8726TRLPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | BSC011N03LSIATMA1 | IRLR8726TRLPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 30 V | — |
| Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55 °C to +150 °C | -55C to +175C |
| पैकेज | PG-TDSON-8-7 (Surface Mount) | TO-252AA (DPAK) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) |
| RoHS स्थिति | Compliant | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 86 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) Max at VGS=10V | — | 5.8 mOhm |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | 15 nC |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Maximum Power Dissipation (PD) at TC=25C | — | 75 W |
| Technology Family | — | StrongIRFET |
| RoHS Compliance | — | ROHS3 Compliant |
| Lead-Free | — | Yes (PBF suffix) |